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http://dx.doi.org/10.6109/jicce.2011.9.3.310

Analysis of Doping Profile Dependent Threshold Voltage for DGMOSFET Using Gaussian Function  

Jung, Hak-Kee (Department of Electronic Engineering, Kunsan National University)
Publication Information
Journal of information and communication convergence engineering / v.9, no.3, 2011 , pp. 310-314 More about this Journal
Abstract
This paper has presented doping profile dependent threshold voltage for DGMOSFET using analytical transport model based on Gaussian function. Two dimensional analytical transport model has been derived from Poisson's equation for symmetrical Double Gate MOSFETs(DGMOSFETs). Threshold voltage roll-off is very important short channel effects(SCEs) for nano structures since it determines turn on/off of MOSFETs. Threshold voltage has to be constant with decrease of channel length, but it shows roll-off due to SCEs. This analytical transport model is used to obtain the dependence of threshold voltage on channel doping profile for DGMOSFET profiles. Also we have analyzed threshold voltage for structure of channel such as channel length and gate oxide thickness.
Keywords
DGMOSFETs; threshold voltage roll-off; digital devices; transport model; channel doping profile;
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