• 경영과학
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• 제26권1호
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• pp.161-169
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• 2009

A traffic analysis on the Internet has an advantage for obtaining the characteristics of transferred packets. There were many studies to understand the characteristics of the Internet traffic with mathematical statistical approach. The approach of this study is different from previous studies. We first introduced a virtual network concept to present the Internet as a simplified mathematical model. It also represents each traffic flowing on the Internet as a parallel Gaussian channel on the virtual network. We suggest the optimal capacity of each parallel Gaussian channel using some related studies on the Gaussian channel model.

• 소성∙가공
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• 제15권9호
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• pp.692-696
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• 2006

Micro fabrication of polymeric materials becomes increasingly important. And it is considered as a low-cost alternative to the silicon or glass-based Micro Electro-Mechanical System(MEMS) technologies. In the present study, micro channels were fabricated via LiGA(Lithographie, Galvanoformung, Abformung) process used for Capillary Electrophoresis(CE) chip. Taguchi method was applied to investigate the effects of process conditions in injection molding(melt temperature, injection speed, mold temperature and packing pressure) on the transcription characteristics of the micro channel. It was found that the skin layer disturbs a formation of micro channel. Furthermore, mold temperature and injection speed were two important factors to affect the replication characteristics of micro channel.

• 한국전산유체공학회:학술대회논문집
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• 한국전산유체공학회 2010년 춘계학술대회논문집
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• pp.352-357
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• 2010

A parametric study has been carried out to elucidate the characteristics of channel flow with a streamwise-periodic array of cylinders. This flow configuration is relevant to heat exchanger applications. The presence of cylinders in channel flow causes the attached wall boundary layer to separate, leading to significant change in flow instabilities. There exist two kinds of instabilities; flow undergoes a primary instability (Hopf bifurcaiton) at a lower Reynolds number, and the unsteady two-dimensional flow becomes unstable to three-dimensional disturbances at a higher Reynolds number. We report here the dependencies of the primary instability as well as the flow characteristics of the subsequent unsteady flow including flow-induced forces and Strouhal number of vortex shedding, on the distance between the cylinder and the channel wall.

• Journal of Mechanical Science and Technology
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• 제20권7호
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• pp.1051-1058
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• 2006

The steady aerodynamic characteristics of a wing flying over a channel are investigated using a boundary-element method. The present method is validated by comparing the computed results with the measured data. Compared with a flat ground surface, the channel fence augmented the lift increase and induced drag reduction. When the fence is lower than the wing height, the gap between the wingtip and the fence does not affect the aerodynamic characteristics of the wing much. When the fence is higher than the wing height, the close gap increased the lift. The induced drag is reduced when the wing is placed near the ground or at the same height as the fence. It is believed that present results can be used in the conceptual design of the high-speed ground transporters flying over the channel.

• 전자공학회논문지A
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• 제30A권12호
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• pp.60-68
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• 1993

Thw VLSI device of submicron level trends to have a low level of reliability because of hot carriers which are caused by short channel effects and which do not appear in a long-channel MOSFET operated in 5V. In order to minimize the generation of hot carrier, much research has been made into various types of drain structures. This study has suggested CG MOSFET (Concaved Gate MOSFET) as new drain structure and compared its electrical characteristics with those of the conventional MOSFET and LDD-structured MOSFET by making use of a simulation method. These three device were assumed to be produced by the LOCOS process and a computer-based analysis(PISCES-2B simulator) was carried out to verify the hot electron-resistant behaviours of the devices. In the present simulation, the channel length of these devises was 1.0$\mu$m and their DC characteristics, such as VS1DT-IS1DT curves, gate and substrate current, potential contours, breakdown voltage and electric field were compared with one another.

• 대한전자공학회논문지
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• 제26권9호
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• pp.1375-1380
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• 1989

Mobility reduction parameters are extracted using a method based on the exploitatiion of Id-Vg and Gm-Vg characteristics of short channel n-MOSFETs in strong inversion region at room temperature. It is found that the reduction of the maximum field effect mobility, \ulcornerFE,max, with the channel length is due to i) the difference between the threshold voltage and the gate voltage which corresponds to the maximum transconductance, and ii) the channel length dependence of the mobility attenuation coefficient, \ulcorner The low field mobility, \ulcorner, is found to be independent of the channel length down to 0.25 \ulcorner ofeffective channel length. Also, the channel length reduction, -I, the mobility attenuation coefficient, \ulcorner the threshold voltage, Vt, and the source-drain resistance, Rsd, are determined from the Id-Vg and -gm-Vg characteristics n-MOSFETs.

• 산업기술연구
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• 제25권A호
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• pp.3-14
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• 2005

In order to accurately analyze the detailed hydraulic characteristics of the curved channel in the downstream of dam with the hydraulic structures such as bridge piers, RMA2 model which is one of two-dimensional models is applied to ChunCheon dam downstream curved channel. A series of hydraulic model tests are carried out for comparison studies. HEC-RAS model is also applied to the same site. There are no errors when velocities and water levels resulted from HEC-RAS model RMA2 model are compared with those of hydraulic model test on the straight channel. But, it is found that results of RMA2 model have a better agreement with those of hydraulic model test than those of HEC-RAS model on the curved channel with bridge piers. Additionally, RMA2 model can be predicted the eddy phenomena around bridge piers of the curved channel.

• 대한전기학회논문지:시스템및제어부문D
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• 제52권12호
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• pp.696-701
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• 2003

This paper presents a systematic method of probing channel characteristics and communication reliabilities of home power line communication network applied to the Internet accessed control of home appliances. The effects of the three performance deterioating factors, i.e., additive noise, channel attenuation, and intersymbol interference, can be systematically measured by applying the channel probing waveform in the frequency range from 100KHz to 450KHz. Probability of bit error is derived with the probed channel parameters of the signal attenuation, noise and signal-to-interference ratio read in the frequency domain. The agreement between the derived probability of bit error and the measured probability of bit error supports the validity of the proposed approach of probing home power line channel characteristics. The experimental results performed with the constructed test-bed applying the proposed channel probing method also support the feasibility of commercially deploying the PLC modem installed home appliances and their services for the Internet accessed home automation.

• Transactions on Electrical and Electronic Materials
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• 제11권1호
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• pp.15-19
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• 2010

In this paper, we discuss design considerations for an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a lateral asymmetric channel (LAC) doping profile. We employed a $0.35\;{\mu}m$ standard complementary MOSFET process for fabrication of the devices. The gates to the LAC doping overlap lengths were 0.5, 1.0, and $1.5\;{\mu}m$. The drain current ($I_{ON}$), transconductance ($g_m$), substrate current ($i_{SUB}$), drain to source leakage current ($i_{OFF}$), and channel-hot-electron (CHE) reliability characteristics were taken into account for optimum device design. The LAC devices with shorter overlap lengths demonstrated improved $I_{ON}$ and $g_m$ characteristics. On the other hand, the LAC devices with longer overlap lengths demonstrated improved CHE degradation and $I_{OFF}$ characteristics.

• Journal of Semiconductor Engineering
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• 제3권2호
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• pp.161-167
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• 2022

Electrical characteristics of LDMOS power device with LDD(Lightly Doped Drain) structure is studied with variation of the region of channel and LDD. The channel in LDMOSFET encloses a junction-type source and is believed to be an important parameter for determining the circuit operation of CMOS inverter. Two-dimensional TCAD MEDICI simulation is used to study hot-carrier effect, on-resistance Ron, breakdown voltage, and transient switching characteristic. The voltage-transfer characteristics and on-off switching properties are studied as a function of the channel length and doping levels. The digital logic levels of the output and input voltages are analyzed from the transfer curves and circuit operation. Study indicates that drain current significantly depends on the channel length rather than the LDD region, while the switching transient time is almost independent of the channel length. The high and low logic levels of the input voltage showed a strong dependency on the channel length, while the lateral substrate resistance from a latch-up path in the CMOS inverter was comparable to that of a typical CMOS inverter with a guard ring.