• Journal of the Korea Institute of Information and Communication Engineering
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• v.5 no.7
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• pp.1326-1331
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• 2001

This paper has been studied about design of a transceiver for data transmission. The transceiver has bandwidth of 424.7~424.95 MHz and uses half duplex communication method, PLL synthesized, 20 channel, 12.5 KHz channel bandwidth and FSK modulation/demodulation method. The transmission set is designed using low noise amplifier and power amplifier Also, it consists of low pass filter and resonation circuit for decrease of spurious signal. The receiver set is designed using dual conversion method. Finally, the transceiver set achieves the following characteristics 9.71dbm output power, 47dbc spurious property and $\pm$12.3 Jitter at sensitivity of -1134dbm.

• Transactions on Electrical and Electronic Materials
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• v.15 no.3
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• pp.149-154
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• 2014

A new CMOS analog design methodology using an independently optimized self-cascode (SC) is proposed. This idea is based on the concept of the dual-workfunction-gate MOSFETs, which are equivalent to SC structures. The channel length of the source-side MOSFET is optimized, to give higher transconductance ($g_m$) and output resistance ($r_{out}$). The highest $g_m$ and $r_{out}$ of the SC structures are obtained by independently optimizing the channel length ratio of the SC MOSFETs, which is a critical design parameter. An operational amplifier (OPAMP) with the proposed design methodology using a standard digital $0.18-{\mu}m$ CMOS technology was designed and fabricated, to provide better performance. Independently $g_m$ and $r_{out}$ optimized SC MOSFETs were used in the differential input and output stages, respectively. The measured DC gain of the fabricated OPAMP with the proposed design methodology was approximately 18 dB higher, than that of the conventional OPAMP.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.3
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• pp.565-570
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• 2012

This paper has proposed a multi-channel low pass filter (LPF) for LTE-Advanced systems. The proposed LPF is an active-RC 5th chebyshev topology with three cut-off frequencies of 5 MHz, 10 MHz, and 40 MHz. A 3-bit tuning circuit has been adopted to prevent variations of each cut-off frequency from process, voltage, and temperature (PVT). To achieve a high cut-off frequency of 40 MHz, an operational amplifier used in the proposed filter has employed a PMOS cross-connection load with a negative impedance. A proposed filter has been implemented in a 0.13-${\mu}m$ CMOS technology and consumes 20.2 mW with a 1.2 V supply voltage.

• Korean Journal of Optics and Photonics
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• v.20 no.5
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• pp.261-265
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• 2009

Our amplifier using an all optical method and a fixed GFF achieved automatic gain flatness throughput the C-band without any NF degradation, and simultaneously achieved a constant 25 dB gain, while input signals were varied between one channel and forty WDM channels. When thirty nine channels were added and dropped, the transient gain variation of the survival channel was not greater than the steady-state gain variation, and its wavelength dependency was negligible.

• Journal of the Korea Society for Simulation
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• v.19 no.4
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• pp.123-128
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• 2010

The space radiation/total ionizing Dose(TID) and its effects, and the GEO satellite system design considerations in space radiation environment are studied in this paper using Spenvis(Space Environment Information System). The GEO satellite system in space environment is simulated by NASA AP8/AE8, JPL91 and NRL CREME models, repectively for trapped particle, solar proton and cosmic-ray. The total ionizing Dose which is accumulated continuously to spacecraft electronics has been expressed as the function of aluminum thickness. These values can be used as the criteria for the selection of electronic parts and shielding thickness of the Digital Channel Amplifier(DCAMP) structure.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.12
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• pp.2226-2234
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• 2016

Orthogonal Frequency Division Multiplexing (OFDM) technique uses multiple sub-carriers for the data transmission. Therefore, Inter Carrier Interference(ICI) is generated because of nonlinear high power amplifier and carrier frequency offset. Wireless OFDM transmission over Doppler fading channels also causes ICI. In OFDMA(Orthogonal Frequency Division Multiplexing Access), multiple sub-carriers are allocated to each user. Therefore, inter carrier interference causes interference to other users. I evaluate the BER performance of OFDMA systems in frequency selective fading channel, considering Multi-User Interference (MUI) owing to the carrier frequency offset, the nonlinear high power amplifier, and the Doppler fading. In the uplink OFDMA, multi-user interference introduces larger BER degradation than in the downlink. I explain the reason and obtain the required characteristics of the nonlinear amplifier and the value of frequency offset for good BER performance. And I also analyze the BER degradation upon Doppler fading channel.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.10
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• pp.1143-1153
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• 2010

In this paper, we propose an alternative method to increase the distortion cancellation bandwidth of an analog RF feedback power amplifier by using a negative group delay circuit(NGDC). A limited distortion cancellation bandwidth due to the group delay(GD) mismatch discouraged the use of feedback technique in spite of its powerful linearization performance. With the fabricated NGDC with positive phase slope over frequency, the feedback amplifier of the proposed topology experimentally achieved adjacent channel leakage ratio(ACLR) improvement of 15 dB over 50 MHz bandwidth at wideband code division multiple access(WCDMA) downlink band when tested with 2-carrier WCDMA signal. At an average output power of 28 dBm, ACLR of 25.1 dB is improved to obtain -53.2 dBc at 5 MHz offset.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.10
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• pp.61-66
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• 2007

A gain enhancement rail-to-rail buffer amplifier for liquid crystal display (LCD) source driver is proposed. An op-amp with extremely high gain is needed to decrease the offset voltage of the buffer amplifier. Cascoded floating current source and class-AB control block in the op-amp achieve a high voltage gain by reducing the channel length modulation effect in high voltage technologies. HSPICE simulation in $1\;{\mu}V$ 15 V CMOS process demonstrates that voltage gain is increased by 30 dB. The offset voltage is improved from 6.84 mV to $400\;{\mu}V$. Proposed op-amp is fabricated in an LCD source driver IC and overall system offset voltage is decreased by 2 mV.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.1
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• pp.53-61
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• 2014

In this paper, we present the design, fabrication and measurement of high efficiency GaN HEMT power amplifier using harmonic matching technique. In order to achieve high efficiency, harmonic load-pull simulation is performed, that is, the optimum load impedances are determined at $2^{nd}$ and $3^{rd}$ harmonic frequencies as well as at the fundamental. Then, the output matching circuit is designed based on harmonic load-pull simulation. The measurement of the fabricated power amplifier shows the linear gain of 20 dB and $P_{1dB}$(1 dB gain compression point) of 33.7 dBm at 1.85 GHz. The maximum power added efficiency(PAE) of 80.9 % is achieved at the output power of 38.6 dBm, which belongs to best efficiency performance among the reported high efficiency power amplifiers. For W-CDMA input signal, the power amplifier shows a PAE of 27.8 % at the average output power of 28.4 dBm, where an ACLR (Adjacent Channel Leakage Ratio) is measured to be -38.8 dBc. Digital predistortion using polynomial fitting was implemented to linearize the power amplifiers, which allowed about 6.2 dB improvement of an ACLR performance.

• Journal of electromagnetic engineering and science
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• v.11 no.1
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• pp.16-26
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• 2011

This paper presents high power and high efficiency Doherty amplifiers for 2.345 GHz wireless broadband (WiBro) applications that use a Nitronex 125-W ($P_{3dB}$) GaN high electron mobility transistor (HEMT). Two- and three-way Doherty amplifiers and a saturated Doherty amplifier using Class-F circuitry are implemented. The measured result for a center frequency of 2.345 GHz shows that the two-way Doherty amplifier attains a high $P_{3dB}$ of 51.5 dBm, a gain of 12.5 dB, and a power-added efficiency (PAE) improvement of about 16 % compared to a single class AB amplifier at 6-dB back-off power region from $P_{3dB}$. For a WiBro OFDMA signal, the Doherty amplifier provides an adjacent channel leakage ratio (ACLR) at 4.77 MHz offset that is -33 dBc at an output power of 42 dBm, which is a 9.5 dB back-off power region from $P_{3dB}$. By employing a digital pre-distortion (DPD) technique, the ACLR of the Doherty amplifier is improved from -33 dBc to -48 dBc. The measured result for the same frequency shows that the three-way Doherty amplifier, which has a $P_{3dB}$ of 53.16 dBm and a gain of 10.3 dB, and the saturated Doherty amplifier, which has a $P_{3dB}$ of 51.1 dBm and a gain of 10.3 dB, provide a PAE improvement of 11 % at the 9-dB back-off power region and 7.5 % at the 6-dB back-off region, respectively, compared to the two-way Doherty amplifier.