• 한국전기전자재료학회논문지
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• 제12권1호
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• pp.44-49
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• 1999

In this study, microstructure and electrical conductivity of {(G $d_2$ $O_3$)$_{0.75}$( $Y_2$ $O_3$)$_{0.25}$}$_{x}$ (Ce $O_2$)$_{1-x}$ (0.01$\leq$x$\leq$0.25) was investigated as a function of composition x. GYO addition(x) increased the bulk density and G $d_2$ $O_3$ was found to be monoclinic at x>0.15. From the change of the lattice parameter with the addition(x), GYO solution limit for ceria was exceeded in the range of x=0.05 to 0.09. Thermal expansion coefficient(15~17$\times$10$^{-6}$ $^{\circ}C$) of GYC samples at x=0.01 to 0.07 was higher in value than that of 8YSZ(10.8$\times$10$^{-6}$ $^{\circ}C$). The electrical conductivity of GYC samples at x=0.05 showed the maximum(0.01S/cm) in value at 1073K which was 2 times higher than that of 8YSZ. The activation energy for the electrical conduction was determined to be 0.60eV in the temperature range of 1073K.3K..3K.

• 한국재료학회지
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• 제30권7호
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• pp.376-382
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• 2020

CeO₂ nanoparticles, employed in a lot of fields due to their excellent oxidation and reduction properties, are synthesized through a solvothermal process, and a high specific surface area is shown by controlling, among various process parameters in the solvothermal process, the type of solvent. The synthesized CeO₂ nanoparticles are about 11~13 nm in the crystallite size and their specific surface area is about 65.38~84.65 ㎡/g, depending on the amount of ethanol contained in the solvent for the solvothermal process; all synthesized CeO₂ nanoparticles shows a fluorite structure. The dispersibility and microstructure of the synthesized CeO₂ nanoparticles are investigated according to the species of dispersant and the pH value of the solution; an improvement in dispersibility is shown with the addition of dispersants and control of the pH. Various dispersing properties appear according to the dispersant species and pH in the solution with the synthesized CeO₂ nanoparticles, indicating that improved dispersing properties in the synthesized CeO₂ nanoparticles can be secured by applying dispersant and pH control simultaneously.

• 한국결정성장학회지
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• 제29권4호
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• pp.160-166
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• 2019

산화세륨($CeO_2$)는 고체산화물연료전지, 자동차 삼원 촉매, 산소 캐패시터 소재 등의 고온환경에서 구동되는 촉매 응용분야에 널리 활용되고 있으며 중요한 희토류 산화물 중에 하나이다. 고온 환경에서 $CeO_2$의 우수한 촉매 활성을 유지하기 위하여 초기 합성단계에서 높은 비표면적을 갖는 미세구조제어 연구와 나노 미세구조가 고온 열 사이클과 산화-환원 사이클 변화에서 안정하도록 하는 연구가 필요하여 많은 연구가 진행되고 있다. 따라서 본 연구에서는 탄산염 침전법의 전구체 결정화 단계에서의 이방성을 정밀 제어하여 고 비표면적의 flower-like $CeO_2$를 성공적으로 합성할 수 있었다. 또한, 서로 다른 탄산염이온 침전제의 침전 반응 경로 제어를 통한 침전 수화물 전구체의 이방적 결정 특성으로부터 최종 고 비표면적 $CeO_2$ 산화물의 미세구조 제어와 고온 안정 제어를 확인하고 특성을 평가하였다.

• Journal of Electrochemical Science and Technology
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• 제12권2호
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• pp.246-256
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• 2021

Mo,Cu-doped CeO₂ (CMCuO) nanopowders were synthesized by the nitrate-fuel combustion method aiming to improve the electrical and electrochemical properties of its Mo-doped CeO₂ (CMO) parent by the addition of copper. An electrical conductivity of ca. 1.22·10^-2 S cm^-1 was measured in air at 800℃ for CMCuO, which is nearly 10 times higher than that reported for CMO. This increase was associated with the inclusion of copper into the crystal lattice of ceria and the presence of Cu and Cu₂O as secondary phases in the CMCuO structure, which also could explain the increase in the charge transfer activities of the CMCuO based anode for the hydrogen and carbon monoxide electro-oxidation processes compared to the CMO based anode. A maximum power density of ca. 120 mW cm^-2 was measured using a CMCuO based anode in a solid oxide fuel cell (SOFC) with YSZ electrolyte and LSM-YSZ cathode operating at 800℃ with humidified syngas as fuel, which is comparable to the power output reported for other SOFCs with anodes containing copper. An increase in the area specific resistance of the SOFC was observed after ca. 10 hours of operation under cycling open circuit voltage and polarization conditions, which was attributed to the anode delamination caused by the reduction of the Cu₂O secondary phase contained in its microstructure. Therefore, the addition of a more electroactive phase for hydrogen oxidation is suggested to confer long-term stability to the CMCuO based anode.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1727-1729
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• 2004

Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP precess, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). we investigated the performance of $WO_3$ CMP used silica slurry, ceria slurry, tungsten slurry. In this paper, the effects of addition oxidizer on the $WO_3$ CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
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• pp.443-444
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• 2002

The uniformity of field oxide is critical to isolation property of device in STI, so the control of field oxide thickness in STI-CMP becomes enormously important. The loss of field oxide in shallow trench isolation comes mainly from dishing and erosion in STI-CMP. In this paper, the effect of slurries on the dishing was investigated with both blanket and patterned wafers were selected to measure the removal rate, selectivity and dishing amount. Dishing was a strong function of pattern spacing and types of slurries. Dishing was significantly decreased with decreasing pattern spacing for both slurries. Significantly lower dishing with ceria based slurry than with silica based slurry were achieved when narrow pattern spacing were used. Possible dishing mechanism with two different slurries were discussed based on the observed experimental results.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
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• pp.439-440
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• 2002

Nano-Crystalline $CeO_2$ particles were dispersed in deionized water with controlled slurry chemicals for CMP test. According to the CMP test, the removal rate of $SiO_2$ layer was mainly controlled by the size and crystallinity of $CeO_2$ particles which can be controlled by the heat-treatment condition during $CeO_2$ synthesis. In contrast, the removal rate of $Si_3N_4$ layer was significantly influenced by the passivation reagent which protects the $Si_3N_4$ surface layer from excessive dissolution during CMP.

• 한국전기화학회:학술대회논문집
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• 한국전기화학회 2005년도 수소연료전지공동심포지움 2005논문집
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• pp.317-322
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• 2005

[ $Pt/CeO_2$ ] 촉매에 Zr을 첨가하여 우수한 저온 수성가스전화반응의 활성을 가진 촉매를 만들었다. $Pt/ZrO_2-CeO_2$ 촉매는 $Pt/ZrO_2$나 $Pt/CeO_2$ 촉매에 비해 Ce와 Zr의 상호작용에 의한 시너지 효과로 인해 CO chemisorption으로 측정한 Pt area가 증가하고 담체에 Pt가 잘 분산되었다. 또한, Zr이 첨가된 $Pt/CeO_2$는 Ce의 redox 능력을 향상시켜 support의 reducibility를 향상시켰다. 담체에 고르게 잘 분산되고 support의 산소저장능력과 reducibility가 향상된 $3\;wt\%\;Pt/ZrO_2-CeO_2$ 촉매들은 반응물에 수소와 이산화탄소의 첨가 유무와 상관없이 $3\;wt\%\;Pt/ZrO_2$나 $3\;wt\%\;Pt/CeO_2$ 촉매보다 우수한 활성을 보였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.64-64
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• 2003

고집적화된 시스템 LSI 반도체 소자 제조 공정에서 소자의 고속화 및 고성능화에 따른 배선층수의 증가와 배선 패턴 미세화에 대한 요구가 갈수록 높아져, 광역평탄화가 가능한 STI CMP(Shallow Trench Isolation Chemical-Mechanical-Polishing)공정의 중요성이 더해가고 있다. 이러한 STI CMP 공정에서 세리아 슬러리에 첨가되는 계면활성제의 농도에 따라 산화막과 질화막 사이의 연마 선택비를 제어하는 것이 필수적 과제로 등장하고 있다. 일반적인 CMP 공정에서 압력 증가에 따른 연마 제거량이 Prestonian 거동을 나타내는 반면, 연마 입자의 크기를 변화시켜 계면활성제의 농도를 달리 하였을 경우, 압력 변화에 따라 Non-Prestonian 거동이 나타나는 것을 고찰할 수 있었다. 따라서 본 연구에서는 세리아 슬러리 내에 첨가되는 계면활성 제의 농도와 연마입자의 크기를 달리한 후, 압력을 변화시킴으로 나타나는 non-Prestonian 거동에 미치는 영향에 대하여 연구하였다.

• Transactions on Electrical and Electronic Materials
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• 제6권4호
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• pp.164-168
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• 2005

Effects of high-temperature slurry were investigated on the chemical mechanical polishing (CMP) performance of tetra-ethyl ortho-silicate (TEOS) film with silica and ceria slurries by the surface analysis of X-ray photoelectron spectroscopy (XPS). The pH showed a slight tendency to decrease with increasing slurry temperature, which means that the hydroxyl $(OH^-)$ groups increased in slurry as the slurry temperature increased and then they diffused into the TEOS film. The surface of TEOS film became hydro-carbonated by the diffused hydroxyl groups. The hydro-carbonated surface of TEOS film could be removed more easily. Consequently, the removal rate of TEOS film improved dramatically with increasing slurry temperature.