• Journal of Korean Society of Coastal and Ocean Engineers
• /
• v.33 no.6
• /
• pp.333-344
• /
• 2021

Technique for the long-gap filling that occur frequently in ocean monitoring data is developed. The method estimates the unknown values of the long-gap by the summation of the estimated trend and selected residual components of the given missing intervals. The method was used to impute the data of the long-term missing interval of about 1 month, such as temperature and water temperature of the Ulleungdo ocean buoy data. The imputed data showed differences depending on the monitoring parameters, but it was found that the variation pattern was appropriately reproduced. Although this method causes bias and variance errors due to trend and residual components estimation, it was found that the bias error of statistical measure estimation due to long-term missing is greatly reduced. The mean, and the 90% confidence intervals of the gap-filling model's RMS errors are 0.93 and 0.35~1.95, respectively.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.29 no.2 s.233
• /
• pp.220-227
• /
• 2005

In this study, stress-displacement analytic solutions are obtained by a shear lag modeling method constructed for the spliced joint area with a splicing gap in the fiber metal laminate (FML). This gap can be empty or be filled with an adhesive material of elastic modulus $E_a$. Two splicing types are considered for spliced shear models, one for spliced in the center metal layer, the other for spliced in the outer metal layer. It is shown that from the viewpoint of the load transfer efficiency and the avoidability of disbond generation due to the shear and axial stresses at the interface between metal layer and composite layer of the gap-front in the spliced area, the center spliced type (k=2) is much preferable to the outer spliced type (k=1).

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.1002-1005
• /
• 2006

In this study, we fabricated white organic light emitting devices (WOLEDs) to use single emission layer, DPVBi with partially doped Rubrene. To realize white color, rubrene with 3.6% was partially doped with the gap from interface between DPVBi and hole transport layer NPD in a definite DPVBi layer. As the gap was increased, the intensity of orange peak grows less and less. The WOLED with gap of $5\;{\AA}$ has the best color stability and its color coordination is (0.345, 0.321) at 6V.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.977-979
• /
• 2006

Organic light-emitting diodes (OLEDs) based on the double wide band gap emissive layers in the range of 380 nm to 440 nm are reported. An efficient electroluminescence with a maximum at 400nm was observed at room temperature under a forward bias about 10V. With the wide band gap organic materials for near-ultraviolet emission, the low operating voltage (5V) and high current efficiency (3 cd/A) have been obtained at $2mA/cm^2$

• Proceedings of the IEEK Conference
• /
• 2001.06b
• /
• pp.17-20
• /
• 2001

In this paper, film bulk acoustic resonator(FBAR) with an air-gap is fabricated by removing ZnO sacrificial layer and its characteristics as a various dimension of ZnO sacrificial and piezoelectric layer is evaluated. The center frequency of the FBAR device with the ZnO film is about 1.9 GHz. Because of mass-loading effect, a dimension of sacrificial layer and piezoelectrc layer affect frequency response such as center frequency, insertion loss, band separation, attenuation and so on.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.93-93
• /
• 2007

We present a mechanism for stress-induced interface degrdadations through ab initio pseudopotential calculations. We find that N interstitials at the interface create various defects levels in the Si band gap, which range from the mid gap to the conduction band of Si. The level positions are dependent on the configuration of oxygen toms around the N interstitial. On the other hand, the mid-gap level caused by Pb center is possibly removed by substitution of a N atom for a threefold-coordinated Si atom in the defect. Our calculations explain why interface state generations are enhanced in Si oxynitride, especially near conduction band edge of Si, although densities of Pb center are reduced.

• Electronic Materials Letters
• /
• v.14 no.6
• /
• pp.774-783
• /
• 2018

Full maximum-entropy mobility-spectrum analysis (FMEMSA) is the best algorithm among mobility spectrum analyses by which we can obtain a set of partial-conductivities associated with mobility values (mobility spectrum) by analyzing magnetic-field-dependent conductivity-tensors. However, it is restricted to a direct band-gap semiconductor and should be modified for materials with other band structures. We developed the modified version of FMEMSA which is appropriate for a material with a single anisotropic valley, or an indirect-band-gap semiconductor quantum-well with a single non-degenerate conduction-band valley e.g., (110)-oriented AlAs quantum wells with a single anisotropic valley. To demonstrate the reliability of the modified version, we applied it to several sets of synthetic measurement datasets. The results demonstrated that, unlike existing FMEMSA, the modified version could produce accurate mobility spectra of materials with a single anisotropic valley.

• Transactions of the Korean Society for Noise and Vibration Engineering
• /
• v.21 no.3
• /
• pp.206-211
• /
• 2011

In this paper, we report a high-precision wireless gap sensor based on a surface acoustic wave (SAW) device. The sensing element is a parallel-plate capacitor whose dimensions are $3{\times}3\;mm^2$, and is attached to the SAW device as an external load. The SAW device, equipped with an RF antenna, serves simultaneously as a signal conditioner and an RF transponder. The center frequency of the SAW device is 450 MHz. The wireless gap sensor prototype exhibits a resolution of 100 nm and a sensing range of $50{\mu}m$. The proposed sensor system can be used for remote, high-precision gap measurement in hard-to-reach environments.

• Progress in Superconductivity
• /
• v.3 no.2
• /
• pp.146-150
• /
• 2002

We performed the point contact spectroscopy on newly discovered superconductor $MgB_2$ thin films with Au tip. In the point contact spectroscopy of the metallic Sharvin limit, the differential conductance below the gap is twice as that above the gap by virtue of Andreev Reflection. After some surface cleaning processes of sample preparation such as ion-milling and wet etching, the obtained dI/dV versus voltage curves are relatively well fitted to the Blonder-Tinkham-Klapwijk (BTK) formalism. Gaps determined by this technique were distributed in the range of 3meV~ 8meV with the BCS value of 5.9meV in the weak coupling limit. We attribute these discrepancies to the symmetry of the gap parameter and the degradation of the surface of the sample. We also present the temperature dependence of the conductance vs voltage curve and thereby the temperature dependence of the gap.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.11a
• /
• pp.195-198
• /
• 1999

A technique is investigated for achieving broadband properties by controlling the operation frequency of microstrip antennas. The control is achieved by applying DC bias to the microstrip antenna. Air gap antenna with PZT post is fabricated. by using in C-band. In the case of Air gap antenna, the variation of center frequency was about 16Mhz and the bandwidth was increased up to 123.3% at 15dB, 160.7% at 20dB than before applying DC bias respectively. The change property of frequency in air gap antenna is nearly the same the C-V property in PZT.