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http://dx.doi.org/10.1007/s13391-018-0081-7

Mobility-Spectrum Analysis of an Anisotropic Material System with a Single-Valley Indirect-Band-Gap Semiconductor Quantum-Well  

Joung, Hodoug (Quantum Functional Semiconductor Research Center, Dongguk University)
Ahn, Il-Ho (Quantum Functional Semiconductor Research Center, Dongguk University)
Yang, Woochul (Department of Physics, Dongguk University)
Kim, Deuk Young (Department of Semiconductor Science, Dongguk University)
Publication Information
Electronic Materials Letters / v.14, no.6, 2018 , pp. 774-783 More about this Journal
Abstract
Full maximum-entropy mobility-spectrum analysis (FMEMSA) is the best algorithm among mobility spectrum analyses by which we can obtain a set of partial-conductivities associated with mobility values (mobility spectrum) by analyzing magnetic-field-dependent conductivity-tensors. However, it is restricted to a direct band-gap semiconductor and should be modified for materials with other band structures. We developed the modified version of FMEMSA which is appropriate for a material with a single anisotropic valley, or an indirect-band-gap semiconductor quantum-well with a single non-degenerate conduction-band valley e.g., (110)-oriented AlAs quantum wells with a single anisotropic valley. To demonstrate the reliability of the modified version, we applied it to several sets of synthetic measurement datasets. The results demonstrated that, unlike existing FMEMSA, the modified version could produce accurate mobility spectra of materials with a single anisotropic valley.
Keywords
Maximum-entropy mobility-spectrum analysis (MEMSA); Full maximum-entropy mobility-spectrum analysis (FMEMSA); Mobility-spectrum analysis (MSA); Hall effect; Anisotropic single valley;
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1 Beck, W.A., Anderson, J.R. : Determination of electrical transport properties using a novel magnetic field-dependent Hall technique. J. Appl. Phys. 62, 541-554 (1987)   DOI
2 Rothman, J., Meilhan, J., Perrais, G., Belle, J.P., Gravrand, O. : Maximum entropy mobility spectrum analysis of HgCdTe heterostructures. J. Electron. Mater. 35, 1174-1184 (2006)   DOI
3 Gui, Y., Li, B., Zheng, G., Chang, Y., Wang, S., He, L., Chu, J. : Evaluation of densities and mobilities for heavy and light holes in p-type HgCdTe molecular beam epitaxy films from magneticfi eld-dependent Hall data. J. Appl. Phys. 84, 4327-4331 (1998)   DOI
4 Antoszewski, J., Faraone, L., Vurgaftman, I., Meyer, J.R., Hoffman, C.A. : Application of quantitative mobility-spectrum analysis to multilayer HgCdTe structures. J. Electron. Mater. 33, 673-683 (2004)   DOI
5 Chrastina, D., Hague, J.P., Leadley, D.R. : Application of Bryan's algorithm to the mobility spectrum analysis of semiconductor devices. J. Appl. Phys. 94, 6583-6590 (2003)   DOI
6 Kiatgamolchai, S., Myronov, M., Mironov, O.A., Kantser, V.G., Parker, E.H.C., Whall, T.E. : Mobility spectrum computational analysis using a maximum entropy approach. Phys. Rev. E 66, 036705 (2002)   DOI
7 Vurgaftman, I., Meyer, J.R., Hoffman, C.A., Cho, S., Ketterson, J.B., Faraone, L., Antoszewski, J., Lindemuth, J.R. : Quantitative mobility spectrum analysis (QMSA) for hall characterization of electrons and holes in anisotropic bands. J. Electron. Mater. 28, 548-552 (1999)   DOI
8 Dasgupta, S., Birner, S., Knaak, C., Bichler, M., Fontcuberta i Morral, A., Abstreiter, G., Grayson, M. : Single-valley high-mobility (110) AlAs quantum wells with anisotropic mass. Appl. Phys. Lett. 93, 132102 (2008)   DOI
9 Dhar, S., Ungersbock, E., Kosina, H., Grasser, T., Selberherr, S. : Electron mobility model for <110> stressed silicon including strain-dependent mass. IEEE Trans. Nanotechnol. 6, 97-100 (2007)   DOI
10 Sun, Y., Thompson, S.E., Nishida, T. : Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors. J. Appl. Phys. 101, 104503 (2007)   DOI
11 Vakili, K., Shkolnikov, Y.P., Tutuc, E., Bishop, N.C., De Poortere, E.P., Shayegan, M. : Spin-dependent resistivity and quantum Hall ferromagnetism in two-dimensional electrons confined to AlAs quantum wells. Phys. E 34, 89-92 (2006)   DOI
12 Padmanabhan, M., Gokmen, T., Bishop, N.C., Shayegan, M. : Effective mass suppression in dilute, spin-polarized two-dimensional electron systems. Phys. Rev. Lett. 101, 026402 (2008)   DOI
13 Meyer, J.R., Hoffman, C.A., Bartoli, F.J., Arnold, D.A., Sivananthan, S., Fauri, J.P. : Methods for magnetotransport characterization of IR detector materials. Semicond. Sci. Technol. 8, 805-823 (1993)   DOI