한국정보디스플레이학회:학술대회논문집
- 2006.08a
- /
- Pages.977-979
- /
- 2006
Development of high performance near-ultraviolet OLEDs based on the Double Wide Band Gap Emissive Layers
- Kim, Young-Min (College of Engineering, Display and Nanosystem Lab., Korea Univ., Korea Institute of Science and Technology, Opto Electronic Materials Research Center) ;
- Park, Young-Wook (College of Engineering, Display and Nanosystem Lab., Korea Univ.) ;
- Choi, Jin-Hwan (College of Engineering, Display and Nanosystem Lab., Korea Univ.) ;
- Kim, Jai-kyeong (Korea Institute of Science and Technology, Opto Electronic Materials Research Center) ;
-
Ju, Byeong-Kwon
(College of Engineering, Display and Nanosystem Lab., Korea Univ.)
- Published : 2006.08.22
Abstract
Organic light-emitting diodes (OLEDs) based on the double wide band gap emissive layers in the range of 380 nm to 440 nm are reported. An efficient electroluminescence with a maximum at 400nm was observed at room temperature under a forward bias about 10V. With the wide band gap organic materials for near-ultraviolet emission, the low operating voltage (5V) and high current efficiency (3 cd/A) have been obtained at
Keywords