Electronic Materials Letters

The Korean Institute of Metals and Materials (대한금속재료학회)
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Mobility-Spectrum Analysis of an Anisotropic Material System with a Single-Valley Indirect-Band-Gap Semiconductor Quantum-Well

  • Joung, Hodoug (Quantum Functional Semiconductor Research Center, Dongguk University) ;
  • Ahn, Il-Ho (Quantum Functional Semiconductor Research Center, Dongguk University) ;
  • Yang, Woochul (Department of Physics, Dongguk University) ;
  • Kim, Deuk Young (Department of Semiconductor Science, Dongguk University)
  • Received : 2018.04.14
  • Accepted : 2018.06.20
  • Published : 2018.11.10
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Abstract

Full maximum-entropy mobility-spectrum analysis (FMEMSA) is the best algorithm among mobility spectrum analyses by which we can obtain a set of partial-conductivities associated with mobility values (mobility spectrum) by analyzing magnetic-field-dependent conductivity-tensors. However, it is restricted to a direct band-gap semiconductor and should be modified for materials with other band structures. We developed the modified version of FMEMSA which is appropriate for a material with a single anisotropic valley, or an indirect-band-gap semiconductor quantum-well with a single non-degenerate conduction-band valley e.g., (110)-oriented AlAs quantum wells with a single anisotropic valley. To demonstrate the reliability of the modified version, we applied it to several sets of synthetic measurement datasets. The results demonstrated that, unlike existing FMEMSA, the modified version could produce accurate mobility spectra of materials with a single anisotropic valley.

Keywords

Acknowledgement

Supported by : National Research Foundation of Korea (NRF)

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