• Journal of Advanced Marine Engineering and Technology
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• 제41권3호
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• pp.251-257
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• 2017

본 논문에서는 TFT-LCD 셀 영상에서 퓨리에 변환을 이용한 주기적인 셀 패턴 제거에 기반한 결함검출 방법을 제안한다. 셀 영상은 결함검출을 어렵게 하는 주기적인 셀 패턴을 포함하므로 패턴 제거가 중요하다. 먼저 셀 영상에 대해 퓨리에 변환을 이용하여 스펙트럼을 구하고, 스펙트럼에서 큰 값의 계수는 셀 패턴에 관련된 계수이므로 적응적 필터를 이용하여 큰 값의 계수를 제거한다. 그리고 필터링된 스펙트럼을 역 퓨리에 변환을 이용하여 셀 패턴이 제거된 영상을 얻는다. 다음으로 셀 패턴이 제거된 영상에서 STD 방법으로 결함을 검출한다. TFT-LCD 셀 영상에 대해 제안 방법의 타당성을 검증한 결과, 제안 방법이 우수한 결함검출 성능을 가짐을 확인하였다.

• 한국정보전자통신기술학회논문지
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• 제16권6호
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• pp.509-518
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• 2023

본 논문에서는 아날로그 회로 트리밍과 Calibration 등에 필요한 4Kb Poly-Fuse OTP IP를 설계하였다. NMOS Select 트랜지스터와 Poly-Fuse 링크로 구성된 Poly-Fuse OTP 셀의 BL 저항을 줄이기 위해 BL은 Metal 2와 Metal 3를 stack하였다. 그리고 BL 라우팅 저항을 줄이기 위해 4Kb 셀은 64행 × 32열 Sub-block 셀 어레이 2개로 나뉘었으며, BL 구동회로는 Top과 Bottom으로 나누어진 2Kb Sub-block 셀 어레이의 가운데에 위치하고 있다. 한편 본 논문에서는 1 Select 트랜지스터에 1 Poly-Fuse 링크를 사용하는 OTP 셀에 맞게 코어회로를 제안하였다. 그리고 OTP IP 개발 초기 단계에서 프로그램되지 않은 Poly-Fuse의 저항이 5kΩ까지 나올수 있는 경우까지를 고려한 데이터 센싱 회로를 제안하였다. 또한 Read 모드에서 프로그램되지 않은 Poly-Fuse 링크를 통해 흐르는 전류를 138㎂ 이하로 제한하였다. DB HiTek 90nm CMOS 공정으로 설계된 Poly-Fuse OTP 셀 사이즈는 11.43㎛ × 2.88㎛ (=32.9184㎛2)이고, 4Kb Poly-Fuse OTP IP 사이즈는 432.442㎛ × 524.6㎛ (=0.227mm²)이다.

• The Journal of the Acoustical Society of Korea
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• 제18권3E호
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• pp.44-48
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• 1999

The CMOS four-quadrant analog multiplier for low-voltage low-power applications are presented in this thesis. The circuit approach is based on the characteristic of the LV (Low-Voltage) composite transistor which is one of the useful analog building block. SPICE simulations are carried out to examine the performances of the designed multiplier. Simulation results are obtained by 0.6㎛ CMOS parameters with 2V power supply. The basic configuration of the multiplier is the CMOS Gilbert cell with two LV composite transistors. The linear input range of the multiplier is over ±0.4V with a linearity error of less than 1.3%. The measured -3dB bandwidth is 288MHz and the power dissipation is 255 ㎼.

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권1호
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• pp.20-30
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• 2001

A 1.8V $650{\;}\textrm{mm}^2$ 4Gb DRAM having $0.10{\;}\mu\textrm{m}^2$ cell size has been successfully developed using 0.11 $\mu\textrm{m}$DRAM technology. Considering manufactur-ability, we have focused on developing patterning technology using KrF lithography that makes $0.11{\;}\mu\textrm{m}$ DRAM technology possible. Furthermore, we developed novel DRAM technologies, which will have strong influence on the future DRAM integration. These are novel oxide gap-filling, W-bit line with stud contact for borderless metal contact, line-type storage node self-aligned contact (SAC), mechanically stable metal-insulator-silicon (MIS) capacitor and CVD Al process for metal inter-connections. In addition, 80 nm array transistor and sub-80 nm memory cell contact are also developed for high functional yield as well as chip performance. Many issues which large sized chip often faces are solved by novel design approaches such as skew minimizing technique, gain control pre-sensing scheme and bit line calibration scheme.

• 한국항해항만학회:학술대회논문집
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• 한국항해항만학회 2000년도 추계학술대회논문집
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• pp.17-20
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• 2000

This study is about a retrograde triple well employed in the Cell tr. of next DRAM and flash memory. triple well structure is formed deep n-well under the light p-well using MeV ion implantation. MeV P implanted deep n-well was observed to show greatly improved characteristics of electrical isolation and soft error. Junction leakage current, however, showed a critical behavior as a function of implantation and annealing conditions. {311} defects were observed to be responsible for the leakage current. {311} defects were generated near the R$\sub$p/ (projected range) region and grown upward to the surface during annealing. This is study on the defect behavior in device region as a function of implantation and annealing conditions.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(II)
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• pp.1463-1466
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• 1987

The problem of generating minimal area CMOS functional cell layout can be converted to that of decomposing the transistor connection graph into a minimum number of subgraphs, each having a pair of Euler paths with the same sequence of input labels on the N-graph and P-graph, which are portions of the graph corresponding to NMOS and PMOS parts respectively. This paper proposes a heuristic algorithm which yields a nearly minimal number of Euler paths from the path representation formula which represents the give a logic function. Subpath merging is done through a list processing scheme where the pair of paths which results in the lowest cost is successively merged from all candidate merge pairs until no further path merging and further reduction of number of subgraphs are possible. Two examples were shown where we were able to further reduce the number of interlaces, i.e., the number of non-butting diffusion islands, from 3 to 2, and from 2 to 1, compared to the earlier work [1].

• Journal of Information Display
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• 제1권1호
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• pp.3-8
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• 2000

We have developed a high performance vertical alignment TFT-LCD (Thin Film Transistor Liquid Crystal Display), that shows a high light transmittance, and wide viewing angle characteristics with an unusually high contrast ratio. In order to optimize the electro-optical properties we have studied the effect of cell parameters, multi-domain structure and retardation film compensation. With the optimized cell parameters and process conditions, we have achieved a 24" wide UXGA TFTLCD monitor (16:10 aspect ratio 1920X1200) showing a contrast ratio of over 500:1, panel transmittance near 4.5%, response time near 25 ms, and viewing angle higher than 80 degree in all directions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.26-31
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• 2002

To realize a high integrated Flash memory utilizing SONOS memory devices, the NOR type 1TC(one Transistor Cell) SONOS Flash arrays are fabricated and characterized. This SONOS Flash arrays with common source lines are designed and fabricated by conventional 0.35$\mu\textrm{m}$ CMOS process. The thickness of ONO for memory cell is tunnel oxide of 34${\AA}$, nitride of 73${\AA}$ and blocking oxide of 34${\AA}$. To investigate operating characteristics, CHEI(Channel Hot Electron Injection) method and Bit line erase method are selected as the write operation and the erase method, respectively. The disturbance characteristics according to the write/erase/read cycling are also examined. The degradation characteristics are investigated and then the reliability of SONOS flash memory is guaranteed.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.561-562
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• 2006

This paper presents an SRAM which uses the technique to equalize the internal cell node by adding an NMOS transistor. Accordingly, the write driver operates rapidly in a differential current of bit lines, and the operation speed of SRAM improves. An SRAM was implemented with a memory cell, a sense amplifier and a write driver. The SRAM obtained the performance of 18% power reduction and improvement of 56% operation speed. And Power delay product was reduced with 63%. The proposed SRAM was designed based on a 0.35um 1P4M CMOS technology.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.17-20
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• 2000

This study is about a retrograde triple well employed in the Cell tr. of next DRAM and flash memory. Triple well structure is formed deep n-well under the light p-well using MeV ion implantation. MeV P implanted deep n-well was observed to show greatly improved characteristics of electrical isolation and soft error. Junction leakage current, however, showed a critical behavior as a function of implantation and annealing conditions. {311} defects were observed to be responsible for the leakage current. {311} defects were generated near the R$\_$p/ (Projected range) region and grown upward to the surface during annealing. This is study on the defect behavior in device region as a function of implantation and annealing conditions.