• Proceeding of EDISON Challenge
• /
• 2016.03a
• /
• pp.357-361
• /
• 2016

Si와 InAs 두 가지 채널 물질을 가지고 3가지 수송 방향 <100>, <110>, <111>으로 변화시키며 각각의 Nanowire nMOSFETs을 가지고 ballistic quantum transport simulation을 진행하였다. 각각의 경우에 대해 E-k curve를 구한 다음에 band curvature로 캐리어의 유효질량을 계산하고, 이를 통해 MOSFET의 전류 세기를 결정짓는 DOS와 carrier injection velocity를 구하여 어떤 경우에 가장 높은 ON-current를 흐르게 하는지 확인해 보았다. 하지만 예상과 달리 나노와이어의 직경이 1.4nm으로 매우 작기 때문에 valley-splitting이 일어나 Si<110>의 경우에 가장 작은 캐리어 유효 질량을 갖고 있는 사실을 확인할 수 있었다. 결론적으로 Si<100>의 경우에 trade-off 관계에 있는 DOS와 carrier injection velocity가 6가지 경우 중 최적의 조합을 가짐으로써 가장 높은 ON-current를 흐르게 하였다.

• Advances in concrete construction
• /
• v.7 no.1
• /
• pp.23-30
• /
• 2019

Five key items were used to create an economical and physically small impact test device for concrete panels subject to high speed collision: an air-compressive system, carbon steel pipe, solenoid valve, carrier and carrier-blocking, and velocity measurement device. The impact test device developed can launch a 20 mm steel spherical projectile at over 200 m/s with measured impact and/or residual velocity. Purpose for development was to conduct preliminary materials tests, prior to large-scale collision experiments. In this paper, the design process of the small impact test device was discussed in detail.

• Journal of Navigation and Port Research
• /
• v.38 no.6
• /
• pp.577-583
• /
• 2014

A ship-to-ship (STS) lightering operation takes place in order to transfer cargo (e.g. crude oil or petroleum products) between an ocean-going ship and a service ship alongside it. Instrumental measurements to accurately determine the relative speeds and distances during the approach between the vessels would benefit the operational safety and efficiency. A velocity information GPS (VI-GPS) system, which uses the instantaneous velocity measures from carrier-phase Doppler measurement, has been applied in a field observation onboard a service ship (Aframax tanker) approaching a ship-to-be-lightered (VLCC) in open waters. This article proposes to apply VI-GPS as the input sensor to a guidance and decision-support system aiming to provide accurate velocity information to the officer in charge of an STS operation. A method for precise velocity measurement using VI-GPS was described and the measurement results were compared each other with the results of Voyage Data Recorder (VDR) and VI-GPS that showed the concept of a guidance and decision-support system applying VI-GPS with the field test results during STS operations. Also, it turned out that VI-GPS has sufficient accuracy to serve as an input sensor from the field test results.

• Proceedings of the Korean Society for Agricultural Machinery Conference
• /
• v.10 no.1
• /
• pp.387-391
• /
• 2005

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.11a
• /
• pp.553-556
• /
• 1999

This paper presents a proper condition to achieve above 19 % conversion efficiency using PC1D simulator. Cast poly-Si wafers with resistivity of 1 $\Omega$-cm and thickness of 250 ${\mu}{\textrm}{m}$ were used as a starting material. Various efficiency influencing parameters such as rear surface recombination velocity and minority carrier diffusion length in the base region, front surface recombination velocity, junction depth and doping concentration in the Emitter layer, BSF thickness and doping concentration were investigated. Optimized cell parameters were given as rear surface recombination of 1000 cm/s, minority carrier diffusion length in the base region 200 ${\mu}{\textrm}{m}$, front surface recombination velocity 100 cnt/s, sheet resistivity of emitter layer 100 $\Omega$/$\square$, BSF thickness 5 ${\mu}{\textrm}{m}$, doping concentration 5$\times$10$^{19}$ cm$^3$ . Among the investigated variables, we learn that a diffusion length of base layer acts as a key factor to achieve conversion efficiency higher than 19 %. Further details of simulation parameters and their effects to cell characteristics are discussed in this paper.

• Advances in nano research
• /
• v.10 no.5
• /
• pp.415-422
• /
• 2021

Silicene, a 2D allotrope of silicon, is predicted to be a potential material for future transistor that might be compatible with present silicon fabrication technology. Similar to graphene, silicene exhibits the honeycomb lattice structure. Consequently, silicene is a semimetallic material, preventing its application as a field-effect transistor. Therefore, this work proposes the uniform doping bandgap engineering technique to obtain the n-type silicene nanosheet. By applying nearest neighbour tight-binding approach and parabolic band assumption, the analytical modelling equations for band structure, density of states, electrons and holes concentrations, intrinsic electrons velocity, and ideal ballistic current transport characteristics are computed. All simulations are done by using MATLAB. The results show that a bandgap of 0.66 eV has been induced in uniformly doped silicene with phosphorus (PSi₃NW) in the zigzag direction. Moreover, the relationships between intrinsic velocity to different temperatures and carrier concentration are further studied in this paper. The results show that the ballistic carrier velocity of PSi₃NW is independent on temperature within the degenerate regime. In addition, an ideal room temperature subthreshold swing of 60 mV/dec is extracted from ballistic current-voltage transfer characteristics. In conclusion, the PSi₃NW is a potential nanomaterial for future electronics applications, particularly in the digital switching applications.

• Journal of Advanced Navigation Technology
• /
• v.14 no.5
• /
• pp.640-647
• /
• 2010

Many methods have been proposed to detect faults of carrier phase measurements, but there are no distinguished methods for land transportation systems. in this paper, the baseline constraints are used to detect faults in GPS carrier phase measurements with vehicle dynamic information. The faults include the multipath on GPS carrier measurements. Multiple antenna groups are used for this research. In the measurement domain the fault detection has been accomplished so that the implementation is easier than other methods.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.602-602
• /
• 2012

TCAD simulation을 이용하여 국부적 후면 접촉 구조를 가지는 단결정 실리콘 태양전지구조를 형성하고 실리콘 기판과 후면 passivation막 사이의 계면 특성 변화에 따른 태양전지의 전기적, 광학적 특성 변화에 대해서 연구하였다. 상기 연구를 진행하기 위하여 process simulator를 이용하여 후면에 국부적인 doped BSF region을 형성하고 device simulator를 이용하여 실리콘 기판과 후면 passivation막 사이의 carrier recombination 특성을 변화시켜 태양전지의 광학적, 전기적 특성을 분석하였다. Carrier recombination velocity의 감소에 따라 국부적 후면 접촉구조를 갖는 태양전지의 특성이 증가하는 것으로 관찰되었다. 이는 후면에서 실리콘과 박막 사잉의 결함이나, dangling bond에 의해서 carrier들이 재결합하는 확률이 줄어듦과 동시에, 후면 전극에서 carrier를 수집할 수 있는 확률이 커지기 때문이며, 800 nm 이상의 장파장영역 광원이 후면 passivation 박막에 의한 reflection으로 이차적인 carrier generation으로 인한 영향으로 판단되며 quantum efficiency 분석으로 규명하였다.

• Solar Energy
• /
• v.5 no.2
• /
• pp.54-59
• /
• 1985

Due to the grainboundary recombination and the poor diffusion length, the polycrystalline cell efficiency is lower than the singlecrystalline cell. In order to define the effect of grains and grain-boundaries, 2 - dimensional differential diffusion equations of minority carrier are modelled. To solve them, two theoretical formulas are derived, which can be evaluated the grainboundary recombination velocity and the grain diffusion length. Also computer-aided numerical analysis is given.

• Coupled systems mechanics
• /
• v.11 no.5
• /
• pp.459-483
• /
• 2022

In the present work, a new photothermoelastic model based on Moore-Gibson-Thompson theory has been constructed. The governing equationsfor orthotropic photothermoelastic plate are simplified for two-dimension model. Laplace and Fourier transforms are employed after converting the system of equations into dimensionless form. The problem is examined due to various specified sources. Moving normal force, ramp type thermal source and carrier density periodic loading are taken to explore the application of the assumed model. Various field quantities like displacements, stresses, temperature distribution and carrier density distribution are obtained in the transformed domain. The problem is validated by numerical computation for a given material and numerical obtained results are depicted in form of graphs to show the impact of varioustheories of thermoelasticity along with impact of moving velocity, ramp type and periodic loading parameters. Some special cases are also explored. The results obtained in this paper can be used to design various semiconductor elements during the coupled thermal, plasma and elastic wave and otherfieldsin thematerialscience, physical engineering.