• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.423.1-423.1
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• 2014

본 발표에서는 실리콘 이종접합 태양전지에서 중요한 실리콘 웨이퍼 표면/계면 제어에 대하여 발표한다. 다시 말하여, 실리콘 웨이퍼 기판 세정공정 변화에 따른 실리콘 웨이퍼 표면의 소수전하수명(minority carrier lifetime, MCLT) 및 태양전지 소자특성 변화에 대하여 연구하였다. 구체적으로, 실리콘 웨이퍼 클리닝 최초단계로써 KOH damage etching 공정을 도입할 때, 이후 클리닝 공정을 통일하여 적용한 웨이퍼 표면의 MCLT 및 상기 웨이퍼를 이용하여 플라즈마 화학기상증착법(PECVD)을 통하여 제작한 태양전지 소자 효율은 KOH etching 시간이 10분일 때 최대치에 도달한 후 감소하였다. 또한, RCA1, RCA2, Piranha로 이루어진 웨이퍼 클리닝 단계의 사이에, 또는 맨 마지막에 묽힌 불산용액(DHF, 5 %) 처리를 하여 표면 산화막 제거 및 수소종단처리를 하여 기판의 passivation 특성을 향상시키고자 할 때, 불산용액 처리 순서에 따른 웨이퍼 표면의 MCLT 및 태양전지 소자 효율을 비교하였다. 그 결과, 묽은불산용액을 클리닝 단계 사이에 적용하였을 때의 MCLT 및 태양전지 소자의 특성이 더 우수하였다.

• Proceedings of the KIPE Conference
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• 1998.10a
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• pp.246-251
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• 1998

This paper describes the main features of an unconventional tester for high power semiconductor devices. Two application ranges are highlighted. The tester is used for the extraction of GTO parameters and their verification by measurements. The second field comprises the determination of the radial and azimuthal current density distribution of a GTO tablet. The results are compared with the carrier lifetime distribution.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.357-360
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• 2003

In this paper, we designed 4.5kV/1.5kA IGCT devices. GCT thyristor has many superior characteristics compared with GTO thyristor, for examples; snubberless turn-off capability, short storage time, high turn-on capability, small turn-off gate charge and low total power loss of the application system containing device and peripheral parts such as anode reactor and snubber capacitance. In this paper we designed GCT thyristor devices, and analyzed static and dynamic characteristics of GCT thyristor depending on the minority carrier lifetime, n-base thickness and doping concentration of n-base region, respectively. Especially, turn-on and turn-off characteristics are very important characteristics for GCT thyristor devices. So, we considered above characteristic for design and analysis of GCT devices.

• Journal of the Korean Applied Science and Technology
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• v.22 no.4
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• pp.299-305
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• 2005

In this study, we designed color of tunable and high efficient organic materials using the quantum dynamics and the semi-empirical calculation, and applied this results to the fabrication of organic light-emitting diodes. Also we optimized the molecular structure of phosphorescent materials and the energy transfer from a host to a dye which makes organic light-emitting diodes improve. Using quantum dynamics method, the molecular structures of ligand only and the whole metal chelate were optimized, and these energy levels were calculated. From this test results, we could understand the emission mechanism of phosphors with various ligands as well as design the proper ligands reducing the T-T annihilation and the carrier lifetime. We also could design ligands with various colors using this test method.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.370-370
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• 2009

이종접합태양전지는 구조적 대칭성 때문에 웨이퍼 두께가 감소하여도 보우잉이 일어나지 않는 특징이 있으며, 산요에서 개발한 이종접합태양전지의 효율이 22% 이상을 보이고 있다. 이종접합태양전지에서 비정질 실리콘과 실리콘 웨이퍼의 계면에 따라 이종접합태양전지의 특성이 크게 변화한다. 본 연구에서는 패시베이션 층으로 사용되는 비정질 실리콘을 hot wire chemical vapor deposition(HWCVD)을 사용하여 이종접합태양전지에 적용하였으며 기존의 plasma-enhanced chemical vapor deposition을 이용한 비정질 실리콘을 적용한 이종접합태양전지와 비교하였다. 패시베이션 특성을 확인하기 위해 quasi-steady state photoconductance로 minority carrier lifetime을 측정하였고, 태양전지 특성평가로는 암전류특성 및 광전류특성을 사용하였다. HWCVD를 사용하여 패시베이션한 태양전지의 경우 16.1%의 효율을 보였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.604-604
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• 2012

기존의 실리콘 이종접합 태양전지는 후면에도 passivation layer인 i-a-Si:H 및 BSF층인 n-a-Si:H가 형성되는 구조를 가지고 있었다. 이러한 구조를 대체하기 위하여 본 연구에서는 실리콘 이종접합 태양전지의 후면 구조에 passivation 층 및 BSF층을 novel material인 Sb증착 및 RTP, laser anneal을 통해 새로운 BSF층 형성하고 태양전지 특성에 대해서 분석하였다. 이를 위해서 carrier lifetime, LIV, DIV 및 QE 등 전기적, 광학적 분석뿐만 아니라 SIMS 분석을 통하여 laser annealing 공정으로 형성된 BSF층의 depth profile 분석도 진행하였다. 또한 wafer orientation에 따른 특성을 분석하기 위하여 (100) 및 (111) wafer를 이용하여 분석하였다.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.788-791
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• 1988

The C-T characteristics of nitridized MOS capacitor have been studied. The generation lifetimes were calculated using C-T transient response ans found to vary as sample condition. This is due to the non-uniformity of fast surface state. Also, This experimental curves were different from theoretical curves. The result suggests that the change in material structure (from SiO2 to Si-N-O) is important in improving minority carrier lifetime.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1563-1565
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• 1997

Electroluminescence(EL)devices based on organic thin layers have attracted lot of interests because of their possible application as large-area light-emitting display. One of the problems of such devices is lifetime of the cell, where the degradation of the cell is partially due to the crystalliyzation of organic layers. In large part, this problem can be solved by using a multilayer device structure prepared by vapor deposition technique. In this study, blue lightemitting multilayer organic electroluminescence devices were fabricated using Poly (9-vinyl-carbazole) (PVK) and 2-(4'-tert-butylpheny])-5-(4"-bis-phenyl)1,3,4-oxadiazole (PBD) as hole trasport and electron transport material, respectively, where tris(8-hydroxyquinolinate) aluminum (Alq3) was used as a luminescenct material. A cell structure of glass substrate/indume-tin-oxide(ITO)/PVK/$Alq_3$/PBD/Mg:In was employed.

• Journal of the Semiconductor & Display Technology
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• v.19 no.2
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• pp.68-71
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• 2020

In this study, SiNx and Al₂O₃ thin film was manufactured using PECVD deposition process and applied to crystalline silicon solar cells, resulting in 16.7% conversion efficiency. The structural improvement experiment of the rear electrode resulted in a 1.7% improvement in conversion efficiency compared to the reference cell by reducing the recombination rate of minority carriers and increasing the carrier lifetime by forming a passivation layer consisting of SiNx and Al₂O₃ thin films through the PECVD process.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1556-1558
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• 2003

IGCT devices is a superior devices for power conversion purpose. The basic structure of the IGCT devices is same as that of GTO thyristor. This makes the blocking voltage higher and controllable on-state current higher. In this paper, we present static and dynamic characteristics of 4.5 kV PT-type IGCT devices as a function of minority carrier lifetime, n-base thickness and n-buffer thickness. We should choose proper structural parameters for good electrical characteristics of GCT devices.