• Tribology and Lubricants
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• v.28 no.5
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• pp.240-245
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• 2012

In this study, we developed a new carrier finger to prevent scratches in a sheet metal forming line. The developed carrier finger was designed to have a streamlined shape with a larger radius of curvature at the edges, as well as a smaller contact area. To evaluate the scratch alleviation effect, a sliding contact analysis and scratch test using the pin on a plate wear tester were conducted for both the old and new carrier fingers. The results show that, for both transverse and longitudinal movements of the strip, the newly designed carrier finger reduces both the friction and scratch depth by its streamlined shape, which decreases the pressure spike at the edge.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.10
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• pp.60-66
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• 1998

The hot carrier induced performance degradation of 0.8${\mu}{\textrm}{m}$ RF NMOSFET has been investigated within the general framework of the degradation mechanism. The device degradation model of an unit finger gate MOSFET could be applied for the device degradation of the multi finger gate RF NMOSFET. The reduction of cut-off frequency and maximum frequency can be explained by the transconductance reduction and the drain output conductance increase, which are due to the interface state generation after the hot carrier stressing. From the correlation between hot carrier induced DC and RF performance degradation, we can predict the RF performance degradation just by the DC performance degradation measurement.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.11
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• pp.62-69
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• 1998

The general degradation model has been applied to analyze the hot carrier induced degradation of the DC and RF characteristics of RF-nMOSFET. The degradation of cut-off frequency has been severer than the degradation of bulk MOSFET drain current. The value of the degradation rate n and the degradation parameter m for RF-nMOSFET has been equal to those for bulk MOSFET. The decrease of device degradation with the increase of fingers could be explained by the large source/drain parasitic resistance and drain saturation voltage. It has been also found that the RF performance degradation could be explained by the decrease of $g_{m}$ and $C_{gd}$ and the increase of $g_{ds}$ after stress. The degradation of the DC and RF characteristics of RF-nMOSFET could be predicted by the measurement of the substrate current.t.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.1
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• pp.8-14
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• 2012

The device performances of n-channel MuGFET with different fin numbers and fin widths but the total effective channel width is constant have been characterized. Two kinds of Pi-gate devices with fin number=16, fin width=55nm, and fin number=14, fin width=80nm have been used in characterization. The threshold voltage, effective electron mobility, threshold voltage roll-off, inverse subthreshold slope, PBTI, hot carrier degradation, and drain breakdown voltage have been characterized. From the measured results, the short channel effects have been reduced for narrow fin width and large fin numbers. PBTI degradation was more significant in devices with large fin number and narrow fin width but hot carrier degradation was similar for both devices. The drain breakdown voltage was higher for devices with narrow fin width and large fin numbers. With considering the short channel effects and device degradation, the devices with narrow fin width and large fin numbers are desirable in the device layout of MuGFETs.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.236-236
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• 2010

단일접합 $n^+-p/p^+$ (p-emitter) 및 $p^+-n/n^+$ (n-emitter) GaAs 태양전지 (Solar Cell)를 각각 제작하여, 그 소자특성을 비교 분석하였다. AM 1.5 (1 sun, $100\;mW/cm^2$) 표준광을 조사할 경우, p-emitter/n-emitter 소자의 개방회로전압 (Voc), 단락회로전류 (Jsc), 충전율 (FF), 효율 (Eff)은 각각 0.910/0.917 V, $15.9/16.1\;mA/cm^2$, 78.7/78.9, 11.4/12.1%로서, n-emitter 소자가 다소 크지만 거의 비슷한 값을 가지고 있었다. 태양전지의 집광 특성을 분석하기 위하여 조사광의 출력에 따른 태양전지의 소자 특성을 측정하였다. 조사광 강도가 높아짐에 따라 p-emitter 소자의 특성은 점진적으로 증가하는 반면, n-emitter는 1.3 sun에서 약 1.4 배의 최대 효율 (17%)을 나타내고 조사광이 더 증가함에 따라 급격히 감소하는 특성을 보여 주었다. (그림 참고) 본 연구에서 사용한 2종류 소자의 층구조는 서로 반대되는 대칭구조로서, 모두 가까이에 위치하고 있는 표면전극 (surface finger) 방향으로 소수전하 (minority carrier)가 이동하고 다수전하 (majority carrier)는 기판 (두께 $350\;{\mu}m$)을 통한 먼 거리의 후면전극 (back electrode)으로 표류 (drift)되도록 설계되어 있다. 이때, n-emitter에서는 이동도 (mobility)와 확산길이 (diffusion length)가 높은 전자가 후면전극으로 이동하기 때문에 적정밀도의 전자-정공 쌍 (EHP)이 여기될 경우에는 Jsc와 Eff가 극대화되지만, 조사광 강도 또는 EHP가 더 높아질 경우에는 직렬저항의 증가와 함께 전류-전압 (I-V)의 이상인자 (ideality factor)가 커짐으로서 FF와 효율이 급격히 감소한 결과로 분석된다. 현재 전산모사를 통한 자세한 분석을 진행하고 있으며, 본 결과는 효율 극대화를 위한 최적 층구조 및 도핑 밀도 설계에 활용할 수 있을 것으로 판단된다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.1
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• pp.46-52
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• 2012

Separate extraction of source ($R_S$) and drain ($R_D$) resistances caused by process, layout variations and long term degradation is very important in modeling and characterization of MOSFETs. In this work, we propose "Avalanche Hot-Source Method (AHSM)" for simple separated extraction of $R_S$ and $R_D$ in a single device. In AHSM, the high field region near the drain works as a new source for abundant carriers governing the current-voltage relationship in the MOSFET at high drain bias. We applied AHSM to n-channel MOSFETs as single-finger type with different channel width/length (W/L) combinations and verified its usefulness in the extraction of $R_S$ and $R_D$. We also confirmed that there is a negligible drift in the threshold voltage ($V_T$) and the subthreshold slope (SSW) even after application of the method to devices under practical conditions.

• Solar Energy
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• v.17 no.4
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• pp.3-11
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• 1997

Because grain boundaries in polycrystalline silicon act as potential barriers and recombination centers for the photo-generated charge carriers, these defects degrade conversion effiency of solar cell. To reduce these effects of grain boundaries, we investigated various influencing factors such as thermal treatment, various grid pattern, selective wet etching for grain boundaries, buried contact metallization along grain boundaries, grid on metallic thin film. Pretreatment above $900^{\circ}C$ in $N_2$ atmosphere, gettering by $POCl_3$ and Al treatment for back surface field contributed to obtain a high quality poly-Si. To prevent carrier losses at the grain boundaries, we carried out surface treatment using Schimmel etchant. This etchant delineated grain boundaries of $10{\mu}m$ depth as well as surface texturing effect. A metal AI diffusion into grain boundaries on rear side reduced back surface recombination effects at grain boundaries. A combination of fine grid with finger spacing of 0.4mm and buried electrode along grain boundaries improved short circuit current density of solar cell. A ultra-thin Chromium layer of 20nm with transmittance of 80% reduced series resistance. This paper focused on the grain boundary effect for terrestrial applications of solar cells with low cost, large area, and high efficiency.

• Membrane Journal
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• v.28 no.6
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• pp.424-431
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• 2018

The gas separation performance of a mixed membrane structure based on a mixture of polyethersulfone (PES) and cobalt tetraphenylporphyrin-benzylimidazole (CoTpp-BIm) as an oxygen carrier was investigated. The CoTpp-BIm mixed PES membrane had an asymmetric structure with a mixture of finger structure and sponge-like structure, and the upper surface was dense. The gas separation performance test was carried out using $94%\;N_2$ gas and $6%\;O_2$ mixed gas. Oxygen and nitrogen permeability coefficients were measured at ${\Delta}P$ ranging from 15 to 228 cmHg and the permeate side of the PES membrane was maintained at vacuum level. The oxygen permeability coefficient of CoTpp-BIm mixed PES membranes increased as supplied pressure was decreased. When the supply pressure was 15 cmHg, the gas permeability ($P_{O_2}$) was 6676 Barrer, the $O_2/N_2$ selectivity (${\alpha}$) was 6.1, and the promoting factor (F) was 2.39. Based on these results, it was confirmed that the addition of CoTpp-BIm to the PES film improved the oxygen separation characteristics.

• Development and Reproduction
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• v.4 no.1
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• pp.67-77
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• 2000

Snailfish usually lives at the bottom of the sea and showed typical retrogressive change with specialized tissue structures of skin and skeletons. In order to obtain the specific genes of snailfish, highly expressed in the body, we made subtracted cDNA library and analyzed 200 clones. Totally 200 clones were obtained and sequenced, and among them 62 clones were turned out to be homologous to the known gene, i.e., thioesterase (9), myosin (8), creatine kinase (7), skeletal alpha-actin (6), parvalbumin b (5), ribosomal protein (5), type I collagen (3), muscle troponin (3), dopamine receptor (2), histatin (2), and heat shock protein (2), cystatin (1), lectin (1), statherin (1), secretory carrier membrane protein (1), keratin type I (1), desmin (1), chloroplast (1), muscle tropomyosin (1), reticulum calcium ATPase (1), ribonucleoprotein (1). The remaining 138 clones were low homologous or non-redundant genes through Genbank search. Especially 5 clones were novel and specifically expressed in the body tissues of Snailfish by in situ hybridization. Therefore, we analysed these 5 clones to identify the C-terminal protein structures and motifs, and partly defined the roles of these proteins in comparison with the expression patterns by in situ hybridization. C9O-77, about 5000 bp, was supposed to be a matrix protein expressed strongly positive in epithelium, myxoid tissue, fibrous tissue and collagenous tissue. C9O-116, about 1500 bp, was supposed to be a transmembrane protein which was weakly expressed in the fibrous tissue, epithelium tissue, and myxoid tissue, but strong in muscle tissue. C9O-130, about 1200 bp, was supposed to be an intracytoplasmic molecule usually in the epithelial cells. C9O-161, about 2000 bp, was weakly expressed in epithelium, muscle tissue and myxoid tissue, but specially strong in epithelium. C9O-171, about 1000 bp, was supposed to be a transcription factor containing zinc finger like domain, which was intensely expressed in the epithelium, muscle tissue, fibrous tissue, and in collagenous tissue.