• Journal of the Semiconductor & Display Technology
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• v.12 no.4
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• pp.45-48
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• 2013

The electronic device, such as flat panel display (FPD), is very important in our life as a means of communication between humans. Liquid crystal display (LCD), which is categorized as a flat panel display, has been used in many display products, especially in TV industry. An LED TV is composed of several electrical components, such as liquid critical module (LCM), analog to digital convertor (AD), power supplier, and inverter board. These modules are very vulnerable to particulate contamination, and causing malfunction or visibility degradation. In this study, we developed a test method for prediction of LCM's lifetime. The test system consists of carbon particle generation flame, dilution system, test chamber, and particle concentration monitoring instrument. Since the carbon particles are the most abundant in the atmosphere and easily absorb light, soot particles are used as a challenging material for this test. The concentration of generated soot particles is set around 4,000,000 #/cc, which is 400 times higher than that of usual atmospheric particles. Through this experiment, we deduced the relationship between the dust concentration and life time of the test specimen.

• Journal of the Semiconductor & Display Technology
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• v.10 no.4
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• pp.37-42
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• 2011

In this paper, novel carbon nanotube (CNT)-filled Solderable electrically conductive adhesive (ECA) and joining process have been developed. To investigate the bonding characteristics of CNT-filled Solderable ECA, three types of Solderable ECAs with different CNT weight percent (0, 0.1, 1wt%) were formulated. For a joining process, the quad flat package (QFP) chip was used. The QFP chip had a size of $14{\times}14{\times}2.7$ mm and a 1 mm lead pitch. The test board had a Cu daisy-chained pattern with 18 ${\mu}m$ thick. After the bonding process, the bonding characteristics such as morphology of conduction path, electrical resistance and pull strength were measured for each formulated ECAs. As a result, the electrical and mechanical bonding characteristics for a QFP joints using CNT-filled ECA were improved about 10% compared to those of QFP joints using ECA without CNT.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.14-19
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• 2002

In this study, as Cu diffusion barrier, tantalum nitrides were successfully deposited on Si(100) substrate and SiO2 by plasma assisted atomic layer deposition(PAALD) and thermal ALD, using pentakis (ethylmethlyamino) tantalum (PEMAT) and $NH_3$ as precursors. The TaN films were deposited on $250^{\circ}$C by both method. The growth rates of TaN films were $0.8{\AA}$/cycle for PAALD and $0.75{\AA}$/cycle for thermal ALD. TaN films by PAALD showed good surface morphology and excellent step coverage for the trench with an aspect ratio of h/w - $1.8 : 0.12 \mu\textrm{m}$ but TaN films by thermal ALD showed bad step coverage for the same trench. The density for PAALD TaN was $11g/\textrm{cm}^3$ and one for thermal ALD TaN was $8.3g/\textrm{cm}^3$. TaN films had 3 atomic % carbon impurity and 4 atomic % oxygen impurity for PAALD and 12 atomic % carbon impurity and 9 atomic % oxygen impurity for thermal ALD. The barrier failure for Cu(200nm)/TaN(l0nm)/$SiO_2(85nm)$/Si structure was shown at temperature above $700^{\circ}$C by XRD, Cu etch pit analysis.

• Journal of the Semiconductor & Display Technology
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• v.11 no.2
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• pp.13-16
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• 2012

Zinc oxide (ZnO) films were deposited by an RF magnetron sputtering system with the RF power of 200W and 300W and flow rate of oxygen gases of 20 and 30 sccm, in order to research the growth of ZnO on carbon doped silicon oxide (SiOC) thin film. The reflectance of SiOC film on Si film deposited by the sputtering decreased with increasing the oxygen flow rate in the range of long wavelength. In comparison between ZnO/Si and ZnO/SiOC/Si thin film, the reflectance of ZnO/SiOC/Si film was inversed that of ZnO/Si film in the rage of 200~1000 nm. The transmittance of ZnO film increased with increasing the oxygen gas flow rate because of the transition from conduction band to oxygen interstitial band due to the oxygen interstitial (Oi) sites. The low reflectance and the high transmittance of ZnO film was suitable properties to use for the front electrode in the display or solar cell.

• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.48-52
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• 2019

Virtual metrology, which is one of APC techniques, is a method to predict characteristics of manufactured films using machine learning with saving time and resources. As the photoresist is no longer a mask material for use in high aspect ratios as the CD is reduced, hard mask is introduced to solve such problems. Among many types of hard mask materials, amorphous carbon layer(ACL) is widely investigated due to its advantages of high etch selectivity than conventional photoresist, high optical transmittance, easy deposition process, and removability by oxygen plasma. In this study, VM using different machine learning algorithms is applied to predict the thickness of ACL and trained models are evaluated which model shows best prediction performance. ACL specimens are deposited by plasma enhanced chemical vapor deposition(PECVD) with four different process parameters(Pressure, RF power, $C_3H_6$ gas flow, $N_2$ gas flow). Gradient boosting regression(GBR) algorithm, random forest regression(RFR) algorithm, and neural network(NN) are selected for modeling. The model using gradient boosting algorithm shows most proper performance with higher R-squared value. A model for predicting the thickness of the ACL film within the abovementioned conditions has been successfully constructed.

• Journal of the Semiconductor & Display Technology
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• v.17 no.1
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• pp.54-61
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• 2018

In this study, two aspects were analyzed about the robot for removal of explosive devices. First, the cost analyses were performed to provide a reasonable solution for the acquirement of the system. It is processed by an engineering estimate method and the process was consisted of two ways : a system development expense and a mass production unit price. In additions, the resultant cost analyses were compared between the cases excluding and including a mines detection system. As results, in the case of the acquirement of the robot system for removal of explosive devices, it is recommended that the performance by improving the mines detection ability should be considered preferentially rather than the cost because the material cost for the mines detection system is negligible compared to the whole system cost. Second, as a way for improving the system performance by the mine detection function, the carbon nanotube (CNT) based sensor technology was studied in terms of sensitivity and simple productivity with presenting its preliminary experimental results. The detection electrodes were formed by a photolithography method using a photosensitive CNT paste. As results, this method was shown as a scalable and expandable technology for the excellent mines detection sensors.

• Journal of IKEEE
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• v.23 no.3
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• pp.988-993
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• 2019

Over the past decades, the semiconductor industry has continuously scaled down the size of semiconductor devices to increase those performance and to integrate them at higher density on the chip. However, facing the reduction of gate control, higher leakage current, and short channel effect, there is a growing interest in next-generation semiconductors which can overcome these problems. In this paper, we discuss digital circuit design techniques using CNTFET(Carbon NanuTube Field Effect Transistor), which are attracting attention as candidates for the next generation of semiconductors. Since the structure of CNTFETs are clearly different from the structure of the structure of conventional MOSFETs, we will discuss how to utilize existing digital circuit methodology when designing digital circuits using the CNTFETs, and then simulate the performance differences between the two devices.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.265-270
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• 2017

4H-SiC has attracted attention for high-power and high-temperature metal-oxide-semiconductor field-effect transistors (MOSFETs) for industrial and automotive applications. The gate oxide in the 4H-SiC MOS system is important for switching operations. Above $1000^{\circ}C$, thermal oxidation initiates $SiO_2$ layer formation on SiC; this is one advantage of 4H-SiC compared with other wide band-gap materials. However, if post-deposition annealing is not applied, thermally grown $SiO_2$ on 4H-SiC is limited by high oxide charges due to carbon clusters at the $SiC/SiO_2$ interface and near-interface states in $SiO_2$; this can be resolved via low-temperature deposition. In this study, low-temperature $SiO_2$ deposition on a Si substrate was optimized for $SiO_2/4H-SiC$ MOS capacitor fabrication; oxide formation proceeded without the need for post-deposition annealing. The $SiO_2/4H-SiC$ MOS capacitor samples demonstrated stable capacitance-voltage (C-V) characteristics, low voltage hysteresis, and a high breakdown field. Optimization of the treatment process is expected to further decrease the effective oxide charge density.

• Coupled systems mechanics
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• v.2 no.2
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• pp.147-157
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• 2013

We numerically investigate the electronic band structure of carbon nanotubes (CNTs) under radial corrugation. Hydrostatic pressure application to CNTs leads to a circumferential wave-like deformation of their initially circular cross-sections, called radial corrugations. Tight-binding calculation was performed to determine the band gap energy as a function of the amplitude of the radial corrugation. We found that the band gap increased with increasing radial corrugation amplitude; then, the gap started to decline at a critical amplitude and finally vanished. This non-monotonic gap variation indicated the metal-semiconductor-metal transition of CNTs with increasing corrugation amplitude. Our results provide a better insight into the structure-property relation of CNTs, thus advancing the CNT-based device development.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1594-1597
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• 2008

Carbon nanotube (CNT) cathodes were fabricated using nano-sized silver powders as a bonding material. The effects of powder size on the field emission properties for the CNT cathode were investigated The better emission properties of CNT cathodes using smaller particles are due to a low sintering temperature of the bonding materials.