• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.818-824
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• 2006

The effects of high-temperature process required to fabricate the SiC devices on the surface morphology and the electrical characteristics were investigated for 4H-SiC Schottky diodes. The 4H-SiC diodes without a graphite cap layer as a protection layer showed catastrophic increase in an excess current at a forward bias and a leakage current at a reverse bias after high-temperature annealing process. Moreover it seemed to deviate from the conventional Schottky characteristics and to operate as an ohmic contact at the low bias regime. However, the 4H-SiC diodes with the graphite cap still exhibited their good electrical characteristics in spite of a slight increase in the leakage current. Therefore, we found that the graphite cap layer serves well as the protection layer of silicon carbide surface during high-temperature annealing. Based on a closer analysis on electric characteristics, a conductive surface transfiguration layer was suspected to form on the surface of diodes without the graphite cap layer during high-temperature annealing. After removing the surface transfiguration layer using ICP-RIE, Schottky diode without the graphite cap layer and having poor electrical characteristics showed a dramatic improvement in its characteristics including the ideality factor[${\eta}$] of 1.23, the schottky barrier height[${\Phi}$] of 1.39 eV, and the leakage current of $7.75\{times}10^{-8}\;A/cm^{2}$ at the reverse bias of -10 V.

• Journal of Technologic Dentistry
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• v.42 no.3
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• pp.213-219
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• 2020

Purpose: This study aimed to identify the impact of physical surface roughing with a polishing tool onto the pre-sintering yttria-stabilized tetragonal zirconia polycrystals (TZP) core and liner treatment for chemical bonding on the bond strength of TZP core and veneering ceramic. Methods: Overall, 80 specimens were classified into two groups (non-liner, NL; and usingliner, UL ) depending on the use of liner, and these two groups were then subclassified into four groups depending on the polishing tool used. (1) Non-liner groups: NS, non-liner+stone point; NC, non-liner+carbide bur; NP, non-liner+paper cone point; NT, non-liner+silicon point. (2) Using-liner groups: US, using-liner+stone point; UC, using-liner+carbide bur; UP, usingliner+paper cone point; UT, using-liner+silicon point. The pre-sintering surface roughing values and shapes were observed, and after burning up the veneering ceramic, the shear bond strength was measured using a universal testing machine. For significance testing, a one-way analysis of variance and Tukey's multiple comparison test were conducted. An optical microscope was used to observe the fracture plane, and the following results were obtained. Results: Surface roughness NP (4.09±0.51 ㎛) represented a higher value than other groups (p<0.001). In shear bond strength, NS (35.21±1.44 MPa) of the NL group showed the highest bond strength (p<0.001). The UL group did not show a statistically significant difference between groups (p=0.612). Conclusion: Our study findings reveal that the bond strength of TZP core and veneering ceramic was improved by pre-sintering physical surface treatment than by chemical bonding with liner surface treatment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.132-132
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• 2008

Silicon carbide (SiC) is an attractive material for high-power, high-temperature, and high-frequency applications. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, the surface potential and topography distributions SiC with different doping levels were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip and a metal defined electrical contacts of Au onto SiC. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the Au deposited on SiC surface was higher than that of original SiC surface. The dependence of the surface potential on the doping levels in SiC, as well as the variation of surface potential with respect to the schottky barrier height has been investigated. The results confirm the concept of the work function and the barrier heights of metal/SiC structures.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.5
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• pp.232-236
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• 2010

Silicon carbide (SiC) ceramics are widely used in the application of high-temperature structural devices due to their light weight as well as superior hardness, fracture toughness, and temperature stability. In this paper, we employed classical molecular dynamics simulations using Tersoff's potential to investigate the elastic constants of the SiC crystal at high temperature. The stress-strain characteristics of the SiC crystal were calculated with the LAMMPS software and the elastic constants of the SiC crystal were analyzed. Based on the stress-strain analysis, the SiC crystal has shown the elastic deformation characteristics at the low temperature region. But the slight plastic deformation behavior was shown as applied the high strain over $1,000^{\circ}C$. Also the elastic constants of the SiC crystal were changed from about 475 GPa to 425 GPa as increased the temperature to $1,250^{\circ}C$.

• Journal of Surface Science and Engineering
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• v.41 no.3
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• pp.88-93
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• 2008

Ir-Re thin films with Ti interlayer were deposited onto the tungsten carbide substrate by ion beam assisted DC magnetron sputtering. The Ir-Re films were prepared with targets of having two atomic percent of 7:3 and 5:5. The microstructure and surface analysis of the specimen were conducted by using SEM, XRD and AFM. Mechanical properties such as hardness and adhesion strength of Ir-Re thin film also were examined. The interlayer of pure titanium was formed with 100 nm thickness. The film growth of Ir-30at.%Re was faster than that of Ir-50at.%Re in the same deposition conditions. Ir-Re thin films consisted of dense and columnar structure irrespective of the different target compositions. The values of hardness and adhesion strength of Ir-30at.%Re thin film coated on WC substrate were higher than those of Ir-50at.%Re thin film.

• Corrosion Science and Technology
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• v.18 no.5
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• pp.206-211
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• 2019

Silicon carbide (SiC) thin films become superhard when they have microstructures of nanocolumnar crystalline grains (NCCG) with an intergranular amorphous SiC matrix. We investigated the role of ion bombardment and deposition temperature in forming the NCCG in SiC thin films. A direct-current (DC) unbalanced magnetron sputtering method was used with pure Ar as sputtering gas to deposit the SiC thin films at fixed target power of 200 W and chamber pressure of 0.4 Pa. The Ar ion bombardment of the deposited films was conducted by applying a negative DC bias voltage 0-100 V to the substrate during deposition. The deposition temperature was varied between room temperature and $450^{\circ}C$. Above a critical bias voltage of -80 V, the NCCG formed, whereas, below it, the SiC films were amorphous. Additionally, a minimum thermal energy (corresponding to a deposition temperature of $450^{\circ}C$ in this study) was required for the NCCG formation. Transmission electron microscopy, Raman spectroscopy, and glancing angle X-ray diffraction analysis (GAXRD) were conducted to probe the samples' structural characteristics. Of those methods, Raman spectroscopy was a particularly efficient non-destructive tool to analyze the formation of the SiC NCCG in the film, whereas GAXRD was insufficiently sensitive.

• Journal of Powder Materials
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• v.28 no.1
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• pp.51-58
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• 2021

The conversion of carbon preforms to dense SiC by liquid infiltration is a prospectively low-cost and reliable method of forming SiC-Si composites with complex shapes and high densities. Si powder was coated on top of a 2.0wt.% Y2O3-added carbon preform, and reaction bonded silicon carbide (RBSC) was prepared by infiltrating molten Si at 1,450℃ for 1-8 h. Reactive sintering of the Y2O3-free carbon preform caused Si to be pushed to one side, thereby forming cracking defects. However, when prepared from the Y2O3-added carbon preform, a SiC-Si composite in which Si is homogeneously distributed in the SiC matrix without cracking can be produced. Using the Si + C → SiC reaction at 1,450℃, 3C and 6H SiC phases, crystalline Si, and Y2O3 were generated based on XRD analysis, without the appearance of graphite. The RBSC prepared from the Y2O3-added carbon preform was densified by increasing the density and decreasing the porosity as the holding time increased at 1,450℃. Dense RBSC, which was reaction sintered at 1,450℃ for 4 h from the 2.0wt.% Y2O3-added carbon preform, had an apparent porosity of 0.11% and a relative density of 96.8%.

• Korean Journal of Materials Research
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• v.31 no.5
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• pp.301-311
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• 2021

The conversion of all carbon preforms to dense SiC by liquid infiltration can become a low-cost and reliable method to form SiC-Si composites of complex shape and high density. Reactive sintered silicon carbide (RBSC) is prepared by covering Si powder on top of 0.5-5.0 wt% Y₂O₃-added carbon preforms at 1,450 and 1,500℃ for 2 hours; samples are analyzed to determine densification. Reactive sintering from the Y₂O₃-free carbon preform causes Si to be pushed to one side and cracking defects occur. However, when prepared from the Y₂O₃-added carbon preform, an SiC-Si composite in which Si is homogeneously distributed in the SiC matrix without cracking can be produced. Using the Si + C = SiC reaction, 3C and 6H of SiC, crystalline Si, and Y₂O₃ phases are detected by XRD analysis without the appearance of graphite. As the content of Y₂O₃ in the carbon preform increases, the prepared RBSC accelerates the SiC conversion reaction, increasing the density and decreasing the pores, resulting in densification. The dense RBSC obtained by reaction sintering at 1,500 ℃ for 2 hours from a carbon preform with 2.0 wt% Y₂O₃ added has 0.20 % apparent porosity and 96.9 % relative density.

• Journal of the Korean Society of Radiology
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• v.16 no.7
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• pp.825-833
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• 2022

In 3D printing technology, materials that can be printed are increasing along with the development of material engineering, and materials that can be used in the field of radiation are also increasing. Therefore, depending on the composition and density of the materials used, the applied field can be different and applied, so the composition and characteristics of the materials must also be considered. In this study, 10 filaments with different properties were selected using a 3D printer of the FDM (Fused Deposition Modeling) method, and the brightness change of each filament was checked using a diagnostic X-ray generator, and the CT number was measured through CT. I wanted to find a material similar to bone. As a result, a material called silicon carbide was found, which has a similar brightness and CT number to bone. It is thought that further research will be presented as basic data for various studies with a density similar to that of human bones.

• Journal of the Microelectronics and Packaging Society
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• v.31 no.3
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• pp.99-104
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• 2024

With the advancement of power electronics technology and the increasing demand for high-efficiency power semiconductors, silicon carbide (SiC) devices have gained attention as an alternative to overcome the limitations of traditional silicon (Si) semiconductors. SiC devices enable excellent switching efficiency due to their high switching speed. However, parasitic inductance within the power module can cause voltage oscillations and overshoot phenomena, potentially leading to issues with electrical reliability and efficiency. To address these challenges, two approaches were proposed and validated. The first approach involved applying an RC snubber circuit to mitigate the effects of parasitic inductance, thereby improving electrical stability. The second approach focused on optimizing the lead-frame design to reduce parasitic inductance. Both methods were verified through simulations and experiments, demonstrating that the electrical reliability and efficiency of SiC power modules can be simultaneously improved.