• Korean Journal of Materials Research
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• v.19 no.1
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• pp.28-32
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• 2009

Silicon carbide (SiC) is a promising material for power device applications due to its wide band gap (3.26 eV for 4H-SiC), high critical electric field and excellent thermal conductivity. The Schottky barrier diode is the representative high-power device that is currently available commercially. A field plate edge-terminated 4H-SiC was fabricated using a lift-off process for opening the Schottky contacts. In this case, Ni/Ti dual-metal contacts were unintentionally formed at the edge of the Schottky contacts and resulted in the degradation of the electrical properties of the diodes. The breakdown voltage and Schottky barrier height (SBH, ${\Phi}_B$) was 107 V and 0.67 eV, respectively. To form homogeneous single-metal Ni/4H-SiC Schottky contacts, a deposition and etching method was employed, and the electrical properties of the diodes were improved. The modified SBDs showed enhanced electrical properties, as witnessed by a breakdown voltage of 635 V, a Schottky barrier height of ${\Phi}_B$=1.48 eV, an ideality factor of n=1.04 (close to one), a forward voltage drop of $V_F$=1.6 V, a specific on resistance of $R_{on}=2.1m{\Omega}-cm^2$ and a power loss of $P_L=79.6Wcm^{-2}$.

• Journal of the Korean Society for Precision Engineering
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• v.3 no.2
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• pp.62-75
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• 1986

An experimental investigation of the machining characteristics such as cutt- ing resistance, surface roughness and tool wear in turning the test pieces of SM45C steel with both coated and uncoated carbide tool tips under various cutting conditions was conducted. Also a specially designed simple vibration damping device was experimentally evaluated for its effectiveness on machined surface roughness and a vibration test was conducted to confirm its ability to reduce the amplitude. Based on these tests finding, the following conclusions are made; 1. The cutting resistance($\textrm{p}_{1}$) increases as the depth of cut(d) increases at fixed feed rate(f) over the cutting speed(v) range of 43-226 m/min and p decreses about 18% average when V is increased for fixed d and f. At V= 226m/min, $\textrm{p}_{1}$/for A, C tips are about the same level but $\textrm{p}_{1}$ for B tip is 15% less than A, C tips. 2. The specific cutting resistance(Ks) at V=226 m/min was derived for A, B, C tips respectively and the value of Ks for B rip is about 20% less than A, C tips. 3. The surface roughness(Ra) improves significantly as the cutting speed(V) is increased and this effect was greater when V>100 m/min. On the other hand, Ra deteriorates as the feed rate(f) is increased and this trend was accelerated when f>0.3 mm/rev. With regard to the difference of Ra values among A, B, C tips, at V=226m/min, d=0.4mm, and f=0.31-0.61mm/rev, Ra values for B.C tips are about 17% less than tip A. 4. The experimental tool wear equations were derived for A, B, C tips and from these equations, the tool life($\textrm{T}_{\textrm{L}}$) baced on the I.S.O. criteria was calculated to be $\textrm{T}_{\textrm{L}}$<$\textrm{T}_{\textrm{LB}}$<$\textrm{T}_{\textrm{LC}}$ for both flank wear($\textrm{V}_{\textrm{B}}$) and boundary wear($\textrm{V}_{\textrm{N}}$). Hence, the coated tips are superior to the uncoated tip and tip C is considered to be the best. 5. The cutting resistance may be slightly reduced and the surface rounghness improved when the damper is used especially when V>100 m/min. Therefore this damping device is considered to be effective and practical. The experimental surface roughness equations were also derived. Based on the vibration test, it is established that the surface roughness improvement was the result of amplitude reduction made possible by the damper.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.05a
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• pp.14-14
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• 2003

Silicon carbide (SiC)는 높은 power 영역과 높은 온도영역에서도 작동 가능한 우수한 반도체 물질이다. 또한 우수한 열적 화학적, 안정성을 가지고 있어 가흑한 조건에서의 소자로써도 사용 가능하다. 현재 SiC 적용분야로는 우수한 전기적, 기계적 성질을 이용한 미세소자(MEMS)와 GaN 와 거의 유사한 격자상수를 가지는 것을 이용한 GaN epitaxial 성장의 기판으로도 사용되어진다. 그러나 SiC 는 기존의 습식식각 용매에 대해 화학적 안정성을 가지고 있기 때문에 전자소자의 제작에 있어서 플라즈마를 이용한 건식식각의 중요성이 대두되어지고 있다. 소자제작에 있어 이러한 건식식각시 식각 단면의 제어, 이온에 의한 낮은 손상 정도, 매끄러운 식각 표면, 그리고 고속의 식각 속도둥이 요구되어진다. 본 실험에서는 식각 속도의 증가와 수직한 식각 단면둥을 획득하기 위하여 SF6 플라즈마에서 Source power, dc bias voltage, 그리고 외부에서 인가되는 자속의 세기를 변화시쳐가며 식각 속도, 식각 마스크와의 식각 션택비, 식각 단면둥과 같은 SiC 의 식각 특성을 관찰하였다. 식각 후 식각 단면은 주사전자 현미경(SEM)을 통해 관찰하였다. 본 실험에서의 가장 높은 식각 속도는 분당 1850n 로써 이때의 공정조건은 1400W 의 inductive power, -600V 의 dc bias voltage, 20G 의 외부자속 세기이었다. 또한, 높은 inductive power 조건과 낮은 dc bias voltage 조건에서 Cu는 $SF_6$ 플라즈마 내에서 식각부산물의 증착으로 인해 SiC 와 무한대의 식각선택비를 보였다. 이러한 Cu 마스크를 사용한 SiC 의 식각에서는 식각 후 수직한 식각 단변을 관찰할 수 있었다. 것올 알 수 있다. 따라서, 기존의 pve 보다 세라믹 기판의 경우가 수분 흡수율이 높아 더 오랫동안 전류를 흐르게 하여 방식성이 개선된 것으로 판단된다.을 통해 경도가 증가한 시편의 경우 석출상의 크기가 5nm 이하로 매우 작고 대체로 기지와 연속적인 계면을 형성하나, 열처리가 진행될수록 석 출상의 크기가 커지고 임계크기 이상에 이르면 연속적인 계면은 거의 발견되지 않고, 대부 분 불연속적이고 확연한 계면을 형성함을 관찰 할 수 있었다. 알루미나(${\alpha}-Al_2O_3$) 기판 위에 증착한 $(Ti_{1-x}AI_{x})N$ 피막은 마찬가지로 (200) 우선 방위를 나타내었으나, 그 입자의 크기가 수십 nm로 고속도강위에 증착한 피막에 비해 상당히 크게 형성되었다. 또한 열처리 후에 AIN의 석출이 진행됨에도 불구하고 경도 증가는 나타나지 않고, 열처리가 진행됨에 따라 경도가 감소하는 양상만을 나타내었다. 결국 $(Ti_{1-x}AI_{x})N$ 피막이 열처리 전후에 보아는 기계적 특성의 변화 양상은 열역학적으로 안정한 Wurzite-AlN의 석출에 따른 것으로 AlN 석출상의 크기에 의존하며, 또한 이러한 영향은 $(Ti_{1-x}AI_{x})N$ 피막에 존재하는 AI의 함량이 높고, 초기에 증착된 막의 업자 크기가 작을 수록 클 것으로 여겨진다. 그리고 환경의 의미의 차이에 따라 경관의 미학적 평가가 달라진 것으로 나타났다.corner$적 의도에 의한 경관구성의 일면을 확인할수 있지만 엄밀히 생각하여 보면 이러한 예의 경우도 최락의 총체적인 외형은 마찬가지로 $\ulcorner$순응$\lrcorner$의 범위를 벗어나지 않는다. 그렇기 때문에

• Korean Journal of Metals and Materials
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• v.56 no.11
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• pp.787-795
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• 2018

The effects of tempering condition on the microstructure and mechanical properties of 30MnB5 hot stamping steel were investigated in this study. Before the tempering, hot-stamped 30MnB5 steel was composed of only ${\alpha}^{\prime}$-martensite microstructure without precipitates. After the tempering at $180^{\circ}C$ for 120 min, nano-sized ${\varepsilon}$-carbides were precipitated in the ${\alpha}^{\prime}$-martensite laths. After tempering at $250^{\circ}C$ for 60 min, cementite was precipitated along the ${\alpha}^{\prime}$-martensite lath boundaries. The cementite was also observed in the specimens tempered at $350^{\circ}C$ for 30 min and $450^{\circ}C$ for 6 min, respectively. The globular ${\alpha}$-ferrite appeared at $350^{\circ}C-30min$ tempering, and the volume fraction of ${\alpha}$-ferrite increased when the tempering temperature was increased. The yield strength increased after tempering, and it reached a peak with the tempering condition of $180^{\circ}C-120min$, due to the nano-sized precipitates in the ${\alpha}^{\prime}$-martensite lath. After the tempering, the steel's ultimate tensile strength (UTS) was decreased due to the reduction in dislocation density and C segregation to lath boundaries. The highest elongation was observed at the $180^{\circ}C-120min$ tempering condition, due to the reduction of residual stress, and the lack of precipitates along the lath boundaries. The $180^{\circ}C-120min$ tempering condition was considered to have outstanding crash performance, according to toughness and anti-intrusion calculation results. In drop tower crash tests, the 30MnB5 door impact beam tempered at $180^{\circ}C$ for 120 min showed better crash performance compared to a 22MnB5 door impact beam.

• Nuclear Engineering and Technology
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• v.45 no.4
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• pp.513-522
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• 2013

The ODSCC detected in the TSP position of Ulchin 3&4 SGs are typical ODSCC of Alloy 600MA tubes. The causative chemical environment is formed by concentration of impurities inside the occluded region formed by the tube surface, egg crate strips, and sludge deposit there. Most cracks are detected at or near the line contacts between the tube surface and the egg crate strips. The region of dense crack population, as defined as between $4^{th}$ and $9^{th}$ TSPs, and near the center of hot leg hemisphere plane, coincided well with the region of preferential sludge deposition as defined by thermal hydraulics calculation using SGAP computer code. The cracks developed homogeneously in a wide range of SGs, so that the number of cracks detected each outage increased very rapidly since the first detection in the $8^{th}$ refueling outage. The root cause assessment focused on investigation of the difference in microstructure and manufacturing residual stress in order to reveal the cause of different susceptibilities to ODSCC among identical six units. The manufacturing residual stress as measured by XRD on OD surface and by split tube method indicated that the high residual stress of Alloy 600MA tube played a critical role in developing ODSCC. The level of residual stress showed substantial variations among the six units depending on details of straightening and OD grinding processes. Youngwang 3&4 tubes are less susceptible to ODSCC than U3 and U4 tubes because semi-continuous coarse chromium carbides are formed along the grain boundary of Y3&4 tubes, while there are finer less continuous chromium carbides in U3 and U4. The different carbide morphology is caused by the difference in cooling rate after mill anneal. There is a possibility that high chromium content in the Y3&4 tubes, still within the allowable range of Alloy 600, has made some contribution to the improved resistance to ODSCC. It is anticipated that ODSCC in Y5&6 SGs will be retarded more considerably than U3 SGs since the manufacturing residual stress in Y5&6 tubes is substantially lower than in U3 tubes, while the microstructure is similar with each other.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.3
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• pp.29-34
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• 2019

Silicon carbide is considered to be a potentially useful material for high-temperature electronic devices, as its large energy band gap and the p-type and/or n-type conduction can be controlled by impurity doping. Particularly, electric conductivity of porous n-type SiC semiconductors fabricated from ${\beta}-SiC$ powder at $2000^{\circ}C$ in $N_2$ atmosphere was comparable to or even larger than the reported values of SiC single crystals in the temperature region of $800^{\circ}C$ to $1000^{\circ}C$, while thermal conductivity was kept as low as 1/10 to 1/30 of that for a dense SiC ceramics. In this work, for the purpose of decreasing sintering temperature, it was attempted to fabricate porous reaction-sintered bodies at low temperatures ($1400-1600^{\circ}C$) by thermal decomposition of polycarbosilane (PCS) impregnated in n-type ${\beta}-SiC$ powder. The repetition of the impregnation and sintering process ($N_2$ atmosphere, $1600^{\circ}C$, 3h) resulted in only a slight increase in the relative density but in a great improvement in the Seebeck coefficient and electrical conductivity. However the power factor which reflects the thermoelectric conversion efficiency of the present work is 1 to 2 orders of magnitude lower than that of the porous SiC semiconductors fabricated by conventional sintering at high temperature, it can be stated that thermoelectric properties of SiC semiconductors fabricated by the present reaction-sintering process could be further improved by precise control of microstructure and carrier density.

• Fire Science and Engineering
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• v.32 no.6
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• pp.108-116
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• 2018

A melted bead microstructure can be divided into a deformed and undeformed layer. Measurement errors occur in the presence of a deformed layer, which should be removed through grinding/polishing whilst preserving the original structure. This paper proposes a grinding/polishing process to analyze the microstructure of copper melted beads. For the removal of the deformed layer, the correlation between the abrasive type/size, the polishing time and polishing rate was analyzed and the thickness of the deformed layer was less than $1{\mu}m$. The results suggest a new grinding/polishing procedure: silicon carbide abrasive $15{\mu}m$ (SiC P1200) 2 min, and $10{\mu}m$ (SiC P2400) 1 min; and diamond abrasive $6{\mu}m$ 8 min, $3{\mu}m$ 6 min, $1{\mu}m$ 10 min, and $0.25{\mu}m$ 8 min. In addition, a method of increasing the sharpness of the microstructure by chemical polishing with $0.04{\mu}m$ colloidal silica for 3 min at the final stage is also proposed. The overall grinding/polishing time is 38 min, which is shorter than that of the conventional procedure.

• Clean Technology
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• v.25 no.1
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• pp.1-6
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• 2019

Effects of the Cu and K addition and the reduction condition of Fe-based catalysts for Fischer-Tropsch reaction are studied in a continuous flow reactor in this research. The catalysts for the reaction were prepared by homogeneous precipitation followed by incipient wetness impregnation. Physicochemical properties of the $Al_2O_3$ supported Fe-based catalysts are characterized by various methods including X-ray diffraction (XRD), temperature programmed reduction (TPR), and scanning electron microscopy (SEM). Catalytic activities and stabilities of the Fe/Cu/K catalyst are investigated in time-on-stream for an extended reaction time over 216 h. It is found that a reduction of the catalysts using a mixture of CO and $H_2$ can promote their catalytic activities, attributed to the iron carbides formed on the catalysts surface by X-ray diffraction analysis. The addition of Cu induces a fast stabilization of the reaction reducing the time to reach at the steady state by enhancement of catalytic reduction. The addition of K to the catalysts increases the CO conversion, while the physical stability of catalyst decreases with potassium loading up to 5%. The Fe/Cu (5%)/K (1%) catalyst shows an enhanced long term stability for the Fischer-Tropsch reaction under the practical reaction condition, displaying about 15% decrease in the CO conversion after 120 h of the operation.

• Journal of the Korea Institute of Building Construction
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• v.21 no.5
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• pp.459-468
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• 2021

Blocking electromagnetic waves on the exterior walls of buildings effectively reduces the intensity of electromagnetic fields in buildings, which leads to attenuation of electromagnetic disturbances, so there is a great interest in developing technologies. In this study, SiC by-products and graphite generated in the semiconductor field were selected and mixed into mortar after pretreatment such as pulverization to evaluate their physical properties and electromagnetic wave shielding performance. Considering the economic efficiency of each shielding material, only 10% volume of the outermost side of the experiment was mixed with each shielding material to evaluate the shielding performance. The shielding performance was predicted when the experiment was manufactured by mixing the shielding material with the entire volume of the experiment using the shielding effect evaluation formula. The results of the experiment showed that the shielding performance was up to 20 dB when SiC grains were mixed with shielding materials, the shielding performance was up to 18 dB when graphite powder was mixed with shielding materials, and the shielding performance was up to 28 dB when SiC powder was mixed with shielding materials, and the shielding performance was close to 30 dB, which is known to have a shielding rate of 99.9%.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.1
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• pp.32-36
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• 2021

This study was investigated in carbon diffusion behavior of laser-carburized TiZrN coating layer and the changes of mechanical properties. The carbon paste was deposited on TiZrN coatings, and the laser was irradiated to carburize into the coatings. The XRD peak corresponding to the (111) plane shifted to a lower angle after the carburization, showing the lattice expansion by doped carbon. The decreased grain size implied the compression by the grain boundary diffusion of carbon. The XPS spectra for the bonding states of carbon was analyzed that carbon was substitute to nitrogen atoms in TiZrN, as carbide, through the thermal energy of laser. In addition, the combination of sp2 and sp3 hybridized bonds represented the formation of an amorphous carbon. The cross-sectional TEM image and the inverse FFT of the TiZrN coating after carburizing were observed as the wavy shape, confirming the amorphous phase located in grain boundaries. After the carburization, the hardness increased from 34.57 GPa to 38.24 GPa, and the friction coefficient decreased by 83 %. In particular, the ratio of hardness and elastic modulus (H/E) which is used as an index of the elastic recovery, increased from 0.11 to 0.15 and the wear rate improved by 65 %.