• 전기학회논문지
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• 제57권5호
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• pp.858-865
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• 2008

In this paper, Capacitive Telemetry RF Sensor System using Recursive Least Square (RLS) algorithm was proposed. General Telemetry RF Sensor System means that it should be "wireless", "implantable" and "batterless". Conventional Telemetry RF Sensor System adopts Integrated Circuit type, but there are many defects like complexity of structure and the limitation of large power consumption in some cases. In order to overcome these disadvantages, Telemetry RF Sensor System based on inductive coupling principle was proposed in this paper. Proposed Telemetry RF Sensor System is very simple because it consists of R, L and C and measures the changes of environment like pressure and humidity in the type of capacitive value. This system adopted RLS algorithm for estimation of this capacitive parameter. For the purpose of applying RLS algorithm, proposed system was mathematically modelled with phasor method and was quasi-linearized. As two parameters such as phase and amplitude of output voltage for estimation were needed, Phase Difference Detector and Amplitude Detector were proposed respectively which were implemented using TMS320C2812 made by Texas Instrument. Finally, It is verified that the capacitance of proposed telemetry RF Sensor System using RLS algorithm can be estimated efficiently under noisy environment.

• Journal of Advanced Marine Engineering and Technology
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• 제31권8호
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• pp.975-982
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• 2007

The single-phase switched reluctance motor(SRM) drive requires DC source which is generally supplied through a rectifier connected with a commercial source. The rectifier is consist of a diode full bridge and a filter circuit. Usually the filter circuit uses capacitor with large value capacitance to reduce ripple component of DC power. Although the peak torque ripple of SRM is small, the short charge and discharge current of the filter capacitor draws the low power factor and system efficiency. A modified single phase SRM drive system is presented in this paper, which includes drive circuit realizing reduction of torque ripple and improvement of power factor. In the proposed drive circuit, one switching part and diode which can separate the output of AC/DC rectifier from the filter capacitor is added. Also, a upper switch of drive circuit is exchanged a diode in order to reduce power switching device. Therefore the number of power switch device is not changed, two diodes are only added in the SRM drive. To verify the proposed system, some simulation and experimental results are presented.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2006년도 전력전자학술대회 논문집
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• pp.403-405
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• 2006

Over the years, plasma display panel (PDP) manufacturers have impressed the flat panel display industry with yet another new product essentially having the merits of a larger screen size. Since larger size implies higher power ratings, voltage/current ratings of the power devices used have become a rising concern. Another important concern is the brightness of PDP, one way of increasing which is by operating the PDP at higher frequencies. In order to address the above issues, a transformer coupled sustain-driver for AC-PDP is proposed During the transition time, the two windings of the transformer greatly boost up the displacement current flowing through the panel capacitance and hence enable a fast inversion of the voltage polarity with practical values of resonant inductance. In the proposed topology, the resonant inductance can be increased by a factor of $(n+1)^2$ as compared to prior approaches. Increased inductance results in lower current stresses. Moreover, high frequency operation is possible by using higher value of n (turn ratio of the transformer). The operational principle and design procedure of the proposed circuit are presented with theoretical analysis. The validity of the proposed sustain driver is established through simulation and experimental results using a 42-in PDP

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집
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• pp.106-109
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• 2005

The $(Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The optimum conditions of RF power and Ar/$O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin film was about 18.75[$\AA$/min]. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The capacitance characteristics had a stable value within ${\pm}4$[%] in temperature ranges of -80~+90[$^{\circ}C$].

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 E
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• pp.1715-1717
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• 1997

This paper deals with the dead operation characteristics of the earth leakage circuit breaker(ELB) caused by impulse voltages. The surge protective devices for electronic circuit and AC power lines are becoming more widely used. It is possible to give rise to the malfunction of ELB due to the operation of surge protective devices, and the interruption of AC power lines brings about several disadvantages such as low reliability of electronic and informational systems, economical loss, and etc. The dead operation characteristics of the ELB from impulse voltages were measured under the conditions of KS C 4613 and the test circuit with a varistor. As a result, the peak current value of the zero-phase sequence circuit of the ELB is increased as the surge voltage and stray capacitance increase. All of the ELBs used in this work were satisfied with the lightning impulse dead operation test condition defined in KS C 4613. However one specimen only did not cause dead operation in the condition of the test circuit with a varistor. There is high possibility that a large portion of the ELBs connected with the AC power lines having the surge protective devices bring about the dead operation.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.581-582
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• 2006

In this paper, we investigate three different types of multi-fingered layout nMOSFET devices with varying $W_f$(unit finger width) and $N_f$(number of finger). Using layout modification, we improve $f_T$(current gain cutoff frequency) value of 15GHz without scaling down, and moreover, we decrease $NF_{min}$(minimum noise figure) by 0.23dB at 5GHz. The RF noise can be reduced by increasing $f_T$, choosing proper finger width, and reducing the gate resistance. For the same total gate width using multi-fingered layout, the increase of finger width shows high $f_T$ due to the reduced parasitic capacitance. However, this does not result in low $NF_{min}$ since the gate resistance generating high thermal noise becomes larger under wider finger width. We can obtain good RF characteristics for MOSFETs by using a layout optimization technique.

• 한국세라믹학회지
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• 제52권3호
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• pp.209-214
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• 2015

Silicon nitride films were deposited at $100^{\circ}C$ by using the catalytic chemical vapor deposition technique. The source gas mixing ratio, $R_N=[NH_3]/[SiH_4]$, was varied from 10 to 30, and the hydrogen dilution ratio, $R_H=[H_2]/[SiH_4]$, was varied from 20 to 100. The breakdown field strength reached a maximum value at $R_N=20$ and $R_H=20$, whereas the resistivity decreased in the same sample. The relative permittivity had a positive correlation with the breakdown field strength. The capacitance-voltage threshold curve showed an asymmetric hysteresis loop, which became more squared as $R_H$ increased. The width of the hysteresis window showed a negative correlation with the slope of the transition region, implying that the combined effect of $R_N$ and $R_H$ overides the interface defects while creating charge storage sites in the bulk region.

• 전력전자학회논문지
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• 제14권3호
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• pp.188-196
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• 2009

슈퍼커패시터는 전력밀도가 높고 사이클 수명이 길며 깨끗한 특성으로 인해 신재생에너지원의 동특성 보상 및 배터리의 동작시간이나 수명연장을 목적으로 널리 사용되고 있다. 본 논문에서는 개선된 슈퍼커패시터의 동특성 모델을 전기화학적 임피던스 분광법(Electrochemical Impedance Spectroscopy)을 이용하여 개발한다. 개발된 모델은 슈퍼커패시터의 정확한 동적 행동을 예측하거나 특정 충전상태(State-Of-Charge)에서의 정확한 정전용량 값을 계산하는데 사용될 수 있다. 주파수영역에서 개발된 모델은 Matlab/Simulink 시뮬레이션을 위하여 시간영역으로 등가 변환된다. 시뮬레이션 결과는 실험 결과와 일치하였으며, 이를 통해 개발된 모델의 유용함과 정확성을 증명하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1988년도 추계학술대회 논문집
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• pp.54-57
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• 1988

A film is fabricated by depositing several slices ultra thin films on a slide glass. The UV-absorbance outcomed on a multi-layered bulky ultra thin film with (N-docosyl pyridinium)-TCNQ (1:2) complex results tat the quantity of UV-absorbances becomes more linearly according to the number of layer becomes higher. In addition, it is found that the capacitance of this film gets smaller as the number of layer gets higher. Finally, the conductivity of this film is measured by the direction of the long axis of the TCNQ radical anion, and is resulted in a remarkably low value (about 1.66∼3.78 x 10$\^$-14/S/cm).

• 반도체디스플레이기술학회지
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• 제9권4호
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• pp.1-5
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• 2010

The PVA (poly-vinyl alcohol) insulators were spun coated onto ITO coated glass substrates with the capacitors of Glass/ITO/PVA/Al structure. The effects of PVA concentrations (3.0, 4.0 and 5.0 wt%) on the morphology and electrical properties of the films were investigated. As the concentration of PVA increased from 3.0 to 5.0 wt%, the leakage current of device decreased from 17.1 to 0.23 pA. From the AFM measurement, the RMS value decreased with increasing PVA concentration, showing the improvement of insulator film roughness. The capacitances of the films with PVA concentrations of 4.0 and 5.0 wt% were about 28.1 and 24.2 nF, respectively. The lowest leakage current of 1.77 PA was obtained at the film thickness of 117.5 nm for the device with fixed PVA concentration of 5.0 wt%.