[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.4191/kcers.2015.52.3.209

Correlations between Electrical Properties and Process Parameters of Silicon Nitride Films Prepared by Low Temperature (100℃) Catalytic CVD

Noh, Se Myoung (Dept. of Energy and Environmental System Engineering, University of Seoul)
Hong, Wan-Shick (Dept. of Nano Science and Technology, University of Seoul)

Publication Information

Journal of the Korean Ceramic Society / v.52, no.3, 2015 , pp. 209-214 More about this Journal

Abstract

Silicon nitride films were deposited at $100^{\circ}C$ by using the catalytic chemical vapor deposition technique. The source gas mixing ratio, $R_N=[NH_3]/[SiH_4]$ , was varied from 10 to 30, and the hydrogen dilution ratio, $R_H=[H_2]/[SiH_4]$ , was varied from 20 to 100. The breakdown field strength reached a maximum value at $R_N=20$ and $R_H=20$ , whereas the resistivity decreased in the same sample. The relative permittivity had a positive correlation with the breakdown field strength. The capacitance-voltage threshold curve showed an asymmetric hysteresis loop, which became more squared as $R_H$ increased. The width of the hysteresis window showed a negative correlation with the slope of the transition region, implying that the combined effect of $R_N$ and $R_H$ overides the interface defects while creating charge storage sites in the bulk region.

Keywords

Silicon nitride; Catalytic chemical vapor deposition; Low temperature process; Electrical property;

Citations & Related Records

Reference

1	W.M. Yun, J. Jang, S. Nam, Y.J. Jeong, L.H. Kim, S. Park, S.J. Seo, and C.E. Park, "Vacuum Thermally Evaporated Polymeric Zinc Acrylate as an Organic Interlayer of Organic/Inorganic Multilayer Passivation for Flexible Organic Thin-Film Transistors," J. Mater. Chem., 22, 25395-401 (2012). DOI
2	W.S. Wong and A. Salleo, Flexible Electronics: Materials and Applications, pp. 78, Springer Science and Business Media, 2009.
3	J. Jiang and M. Furuta, "Self-Aligned Bottom-Gate In-Ga-Zn-O Thin Film Transistor with Source/Drain Regions Formed by Direct Deposition of Fluorinated Silicon Nitride," IEEE Electron Device Lett., 35 [9] 933-35 (2014). DOI
4	A Masuda, H. Umemoto, and H. Matsumura, "Various Applications of Silicon Nitride by Catalytic Chemical Vapor Deposition for Coating, Passivation and Insulating Films," Thin Solid Films, 501, 149-53 (2006). DOI
5	H. Wiesmann, A.K. Ghosh, T. McMahon, and M. Strongin, "A-Si:H Produced by High-Temperature Thermal Decomposition of Silane," J. Appl. Phys., 50 [5] 3752-54 (1979). DOI
6	H. Matsumura, T. Hasegawa, S. Nishizaki, and K. Ohdaira, "Advantage of Plasma-less Deposition in Cat-CVD to the Performance of Electronic Devices," Thin Solid Films, 519, 4568-70 (2011). DOI
7	H. Matsumura, "Formation of Silicon-Based Thin Films Prepared by Catalytic Chemical Vapor Deposition (Cat-CVD) Method," Jpn. J. Appl. Phys., 37 [6A] 3175-87 (1998). DOI
8	K. Koyama, K. Ohdaira, and H. Matsumura, "Excellent Passivation Effect of Cat-CVD $SiN_x$ /i-a-Si Stack Films on Si Substrates," Thin Solid Films, 519, 4473-75 (2011). DOI
9	T.C. Thi, K. Koyama, K. Ohdaira, and H. Matsumura, "Passivation Characteristics of $SiN_x$ /a-Si and $SiN_x$ /Si-rich- $SiN_x$ Stacked Layers," Solar Energy Materials and Solar Cells, 100 169-73 (2012). DOI
10	S.G. Ansari, H. Umemoto, T. Morimoto, K. Yoneyama, A. Izumi, A. Masuda, and H. Matsumura, " $H_2$ Dilution Effect in the Cat-CVD Processes of the $SiH_4/NH_3$ System," Thin Solid Films, 501, 31-34 (2006). DOI
11	J.D. Moschner, J. Schmidt, and R. Hezel, "Catalytic Chemical Vapor Deposition of Silicon Nitride with Strongly Enhanced Deposition Rate," Proceedings of the 19th European Photovoltaic Solar Energy Conference, Paris, France, pp.1082-85 (2004).
12	Z. Yin and F.W.Smith, "Optical Dielectric Function and Infrared Absorption of Hydrogenated Amorphous Silicon Nitride Film," Phys. Rev. B, 42 [6] 3666-75 (1990). DOI
13	E. Van Besien, A. Singh, Y. Barbarin, P. Verdonck, H.F.W. Dekkers, K. Vanstreels, J.F. de Marneffe, M.R.Baklanov, and S. Van Elshocht, "Low-k a-SiCO:H films as Diffusion Barriers for Advanced Interconnects," Microelectronics Engineering, 120 221-24 (2014). DOI
14	D.A. Niemen, Semiconductor Physics and Devices, pp. 480-83, McGraw-Hill, 2003.
15	M. Kuhn, "A Quasi-Static Technique for MOS C-V and Surface State Measurements," Solid State Electron. 13, 873-85 (1970). DOI
16	A. Kikawa, A. Izumi, and H. Matsumura, "Improvements of Electrical Properties and Interface Morphology of $SiN_x$ /Si by Inserting the Nitridation Layer," Dig. Tech. Papers 2003 Int. Workshop Active-Matrix Liquid-Crystal Displays - TFT Technologies and Related Materials, Tokyo, Japan, pp. 95-98 (2003).