• JSTS:Journal of Semiconductor Technology and Science
• /
• v.17 no.2
• /
• pp.265-270
• /
• 2017

4H-SiC has attracted attention for high-power and high-temperature metal-oxide-semiconductor field-effect transistors (MOSFETs) for industrial and automotive applications. The gate oxide in the 4H-SiC MOS system is important for switching operations. Above $1000^{\circ}C$, thermal oxidation initiates $SiO_2$ layer formation on SiC; this is one advantage of 4H-SiC compared with other wide band-gap materials. However, if post-deposition annealing is not applied, thermally grown $SiO_2$ on 4H-SiC is limited by high oxide charges due to carbon clusters at the $SiC/SiO_2$ interface and near-interface states in $SiO_2$; this can be resolved via low-temperature deposition. In this study, low-temperature $SiO_2$ deposition on a Si substrate was optimized for $SiO_2/4H-SiC$ MOS capacitor fabrication; oxide formation proceeded without the need for post-deposition annealing. The $SiO_2/4H-SiC$ MOS capacitor samples demonstrated stable capacitance-voltage (C-V) characteristics, low voltage hysteresis, and a high breakdown field. Optimization of the treatment process is expected to further decrease the effective oxide charge density.

• Journal of the Korean Ceramic Society
• /
• v.32 no.3
• /
• pp.371-377
• /
• 1995

Silicon oxide films were grown on single-crystal silicon substrates at low temperatures (25~205$^{\circ}C$) in a low pressure electron cyclotron resonance (ECR) oxygen plasma. The growth rate of the silicon oxide film increased as the temperature increased or the pressure decreased. Also, the thickness of the silicon oxide film increased at negative bias voltage, but not changed at positive bias voltage. The growth law of the silicon oxide film was approximated to the parabolic form. Capacitance-voltage (C-V) and current density-electric field (J-E) characteristics were studied using Al/SiO2/p-Si MOS structures. For a 10.2 nm thick silicon oxide film, the leakage current density at the electric field of 1 MVcm-1 was less than 1.0$\times$10-8Acm-2 and the breakdown field was higher than 10 MVcm-1. The flat band voltage of Al/SiO2/p-Si MOS capacitor was varied in the range of -2~-3 V and the effective dielectric constant was 3.85. These results indicate that high quality oxide films with properties that are similar to those of thermal oxide film can be fastly grown at low temperature using the ECR oxygen plasma.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.11a
• /
• pp.183-184
• /
• 2005

In this study, our varistors based on M.Matsuoke's composition were fabricated with ZnO nano-powder whose sizes were 50nm and 100nm. Electrical properties of ZnO nano-powder varistors were obtained by capacitance-voltage and frequency-real impedance. nano-powder varistors are indicated the change of the interface defects density $N_t$ at the grain boundaries and the donor concentration $N_d$ in the ZnO grains. Frequency analysis was accomplished to understand the equivalent circuit.

• Transactions on Electrical and Electronic Materials
• /
• v.17 no.4
• /
• pp.196-200
• /
• 2016

We have developed new electrostatic discharge (ESD) protection devices with, bidirectional flip chip transient voltage suppression. The devices differ in their epitaxial (epi) layers, which were grown by reduced pressure chemical vapor deposition (RPCVD). Their ESD properties were characterized using current-voltage (I-V), capacitance-voltage (C-V) measurement, and ESD analysis, including IEC61000-4-2, surge, and transmission line pulse (TLP) methods. Two BD-FCTVS diodes consisting of either a thick (12 μm) or thin (6 μm), n-Si epi layer showed the same reverse voltage of 8 V, very small reverse current level, and symmetric I-V and C-V curves. The damage found near the corner of the metal pads indicates that the size and shape of the radius governs their failure modes. The BD-FCTVS device made with a thin n- epi layer showed better performance than that made with a thick one in terms of enhancement of the features of ESD robustness, reliability, and protection capability. Therefore, this works confirms that the optimization of device parameters in conjunction with the doping concentration and thickness of epi layers be used to achieve high performance ESD properties.

• Proceedings of the KIEE Conference
• /
• 2001.11a
• /
• pp.174-177
• /
• 2001

The voltage holding ratio (VHR) and Residual DC property in the in-plane switching (IPS) cell was studied Several IPS cells which have different concentrations of cynao liquid crystals (LCs) and different resistivities of fluorine LCs were fabricated VHR and residual DC voltage in the IPS cells using the capacitance-voltage (C-V) hysteresis method was measured. We found that the VHR of the IPS cell was decreasing with increasing concentration of cyano LC. The residual DC voltage of the IPS cell was decreasing with increasing concentration of cyano LCs. We suggest that the high polarity of cyano LC helps reducing the residual DC voltage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.12
• /
• pp.1090-1095
• /
• 2008

The SiOCH films that low dielectric interlayer dielectric materials were deposited on p-type Si(100) substrates through the dissociation of BTMSM precursors with oxygen gas by using PECVD method. BTMSM precursor was introduced with the flow rates from 42 sccm to 60 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. SiOCH thin films were annealed at $450^{\circ}C$ for 30 minutes. The electrical property of SiOCH thin films was studied by MIS, Al/SiOCH/p-Si(100), structure. Annealed samples showed even greater reductions of the maximum capacitance and the dielectric constant of the SiOCH samples, owing to reductions of surface charge density. we confirmed this result with derivative of C-V characteristic, leakage current density. The maximum capacitance and leakage current density were respectively decreased about 4 pF, 60% after annealing. The average of low-k value is approximatly 2.07 after annealing.

• Journal of the Korea Organic Resources Recycling Association
• /
• v.30 no.2
• /
• pp.5-15
• /
• 2022

In this study, heated tobacco biomass was prepared as an active material for supercapacitor device. Retrieved tobacco leaf from the heated tobacco was carbonized at various temperature(800/850/950℃). Carbonized tobacco leaf material synthesized at 850℃ exhibited the highest C/O ratio, indicating the finest carbon quality. In addition, polypyrrole was coated onto the carbonized leaf material for increasing the electrochemical performance via low-temperature polymerization method. As-synthesized carbonized leaf material at 850℃(CTL-850)-based electrode and polypyrrole-coated carbonized leaf material(CTL-850/PPy)-based electrode displayed outstanding specific capacitances of 100.2 and 155.3F g^-1 at 1 A g^-1 with opertaing window of -1.0V and 1.0V. Asymmetric supercapacitor device, assembled with CTL-850 as the negative electrode and CTL-850/PPy as the positive electrode, manifested specific capacitance of 31.1F g^-1(@1 A g^-1) with widened operating voltage window of 2.0V. Moreover, as-prepared asymmetric supercapacitor device was able to lighten up the RED Led (1.8V), suggesting the high capacitance and extension of operating voltage window. The result of this research may help to pave the new possibility toward preparing the effective energy storage device material recycling the biomass.

• Journal of IKEEE
• /
• v.18 no.4
• /
• pp.620-624
• /
• 2014

In this study, the electrical characteristics of Ni/CNT/$SiO_2$ structures were investigated in order to analyze the mechanism of carbon nanotubes in 4H-SiC MIS device structures. We fabricated 4H-SiC MIS capacitors with or without carbon nanotubes. Carbon nanotubes were dispersed by isopropyl alcohol. The capacitance-voltage (C-V) is characterized at 300 to 500K. The experimental flat-band voltage ($V_{FB}$) shift was positive. Near-interface trapped charge density and oxide trapped charge density values of Ni/CNT/$SiO_2$ structure were less than values of reference samples. With increasing temperature, the flat-band voltage was negative. It has been found that its oxide quality is related to charge carriers or defect states in the interface of 4H-SiC MIS capacitors. Gate characteristics of 4H-SiC MIS capacitors can be controlled by carbon nanotubes between Ni and $SiO_2$.

• Journal of the Semiconductor & Display Technology
• /
• v.16 no.1
• /
• pp.70-74
• /
• 2017

To research the electrical properties of ZnS thin films with various annealing conditions, ZnS was prepared by RF magnetron sputtering system and annealed in a vacuum for 10 minutes. All films were analyzed by the XRD, PL and I-V measurement system. The XRD pattern of ZnS film annealed at $100^{\circ}C$ was shifted to lower 2 theta because of the formation of a depletion region at the interface between a substrate and ZnS thin film, and the capacitance was abruptly increased. However, the pattern of XRD of ZnS film annealed at $100^{\circ}C$ with a Schottky contact was showed the amorphous structure, and the current-voltage characteristics were non-linearly observed by the Schottky contact.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.13 no.1
• /
• pp.110-114
• /
• 2009

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different substrate temperature. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature and $150^{\circ}C$. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET.