High Performance ESD/Surge Protection Capability of Bidirectional Flip Chip Transient Voltage Suppression Diodes |
Pharkphoumy, Sakhone
(School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University)
Khurelbaatar, Zagarzusem (School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University) Janardhanam, Valliedu (School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University) Choi, Chel-Jong (School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University) Shim, Kyu-Hwan (School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University) Daoheung, Daoheung (Automation Division, Technology Computer and Electronic Institute) Bouangeun, Bouangeun (Automation Division, Technology Computer and Electronic Institute) Choi, Sang-Sik (R&D Division, Sigetronics, Inc.) Cho, Deok-Ho (R&D Division, Sigetronics, Inc.) |
1 | A. Z. Wang, H. G. Feng, K. Gong, R. Y. Zhan, and J. Stine, Microelectron. J., 32, 733 (2001). [DOI: http://dx.doi.org/10.1016/S0026-2692(01)00060-X] DOI |
2 | M. D. Ker and W. J. Chang, IEEE Trans. Electron Dev., 55, 1409 (2008). [DOI: http://dx.doi.org/10.1109/TED.2008.920972] DOI |
3 | Z. Wang, H. Feng, R. Zhan, H. Xie, G. Chen, Q. Wu, X. Guan, Z. Wang, and C. Zhang, IEEE Trans. Electron Dev., 52, 1304 (2005). [DOI: http://dx.doi.org/10.1109/TED.2005.850652] DOI |
4 | A. Amerasekera and C. Duvvury, IEEE Trans. Compon. Package. Manuf. Tech. C, 18, 314 (1995). [DOI: http://dx.doi.org/10.1109/95.390309] DOI |
5 | R. Merri and E. Issaq. Proc. of the EOS/ESD Symp. (Florida, USA, 1993) p. 233. |
6 | T. Green, Proc. of the EOS/ESD Symp. (NY, USA, 1988) p. 7. |
7 | W. K. Hong, D. Bouangeung, Y. H. Kil, H. D. Yang, S. S. Choi, D. H. Cho, C. J. Choi, and K. H. Shim, Proc. of the EOS/ESD Symp. (Arizona, USA, 2012) p. 1. |
8 | D. Boungeune, S. S. Choi, C. J. Choi, D. H. Cho, and K. H. Shim, JSTS, 14, 1 (2014). |
9 | A. Akram, A. Salman, M. M. Pelella, S. G. Beebe, and N. Subba, IEEE Trans. Dev. Mater. Reliab., 6, 292 (2006). [DOI: http://dx.doi.org/10.1109/TDMR.2006.876587] DOI |
10 | P. Chowdhuri and T. B. Gross, Institution of Electrical Engineers, 114, 1899 (1967). [DOI: http://dx.doi.org/10.1049/piee.1967.0363] DOI |
11 | D. Tremouilles, S. Thijs, P. Roussel, M. I. Natarajan, V. Vassilev, and G. Groeseneken, Microelectron. Reliab., 7, 1016 (2007). [DOI: http://dx.doi.org/10.1016/j.microrel.2006.11.004] DOI |
12 | P. S. Georgilakis and A. G. Kagiannas, Int. J. Elec. Power, 63, 373 (2014). [DOI: http://dx.doi.org/10.1016/j.ijepes.2014.06.004] DOI |
13 | Operational Manual, Epsilon 2000 Single Wafer Epitaxial Reactor, ASM |
14 | S. S. Choi, D. H. Cho, and K. H. Shim, Electron. Mater. Lett., 5, 59 (2009). [DOI: http://dx.doi.org/10.3365/eml.2009.06.059] DOI |
15 | D. Bouangeune, Y. H. Kil, S. S. Choi, D. H. Cho, K. H. Shim, and C. J. Choi, Mater. Trans., 54, 2125 (2013). [DOI: http://dx.doi.org/10.2320/matertrans.M2013144] DOI |
16 | D. Boungeune, S. S. Choi, C. J. Choi, Y. H. Kil, J. W. Yang, D. H. Cho, and K. H. Shim, Electron. Mater. Lett., 10, 893 (2014). [DOI: http://dx.doi.org/10.1007/s13391-014-3296-2] DOI |
![]() |