• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.539-542
• /
• 2001

In SiC semiconductor device processing, it needs high temperature anneal for activation of ion implanted dopants. The macrosteps, 7~8nm in height, are formed on the surface of SiC substrates during activation anneal. We have investigated the effect of thermally-grown SiO$_2$layer on the suppression of macrostep formation during high temperature anneal. The cap oxide layer was found to be efficient for suppression of macrostep formation even though the annealing temperature is as high as the melting point of SiO$_2$. The thin cap oxide layer (10nm) was evaporated during anneal then the macrosteps were formed on SiC substrate. On the other hand the thicker cap oxide layer (50nm) remains until the anneal process ends. In that case, the surface was smoother and the macrosteps were rarely formed. The thermally-grown oxide layer is found to be a good material for the suppression of macrostep formation because of its feasibility of growing and processing. Moreover, we can choose a proper oxide thickness considering the evaporate rate of SiO$_2$at the given temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.04b
• /
• pp.39-42
• /
• 2000

As gate dimensions continue to shrink below $0.2{\mu}m$, improving CD (Critical Dimension) control has become a major challenge during CMOS process development. Anti-Reflective Coatings are widely used to overcome high substrate reflectivity at Deep UV wavelengths by canceling out these reflections. In this study, we have investigated Batchtype system for PECVO SiOxNy as Anti-Reflective Coatings. The Singletype system was baseline and Batchtype system was new process. The test structure of Singletype is SiON $250{\AA}$ + Cap Oxide $50{\AA}$ and Batchtype is SiON $250{\AA}$ + Cap Oxide $50{\AA}$ or N2O plasma treatment. Inorganic chemical vapor deposition SiOxNy layer has been qualified for bottom ARC on Poly+WSix layer, But, this test was practiced on the actual device structure of TiN/Al-Cu/TiN/Ti stacks. A former day, in Batchtype chamber thin oxide thickness control was difficult. In this test, Batchtype system is consist of six deposition station, and demanded 6th station plasma treatment kits for N2O treatment or Cap Oxide after SiON $250{\AA}$. Good reflectivity can be obtained by Cap Oxide rather than N2O plasma treatment and both system of PECVD SiOxNy ARC have good electrical properties.

• The Korean Journal of Physiology and Pharmacology
• /
• v.16 no.3
• /
• pp.211-217
• /
• 2012

Recent studies have demonstrated that nitric oxide (NO) activates transient receptor potential vanilloid subtype 1 (TRPV1) via S-nitrosylation of the channel protein. NO also modulates various cellular functions via activation of the soluble guanylyl cyclase (sGC)/protein kinase G (PKG) pathway and the direct modification of proteins. Thus, in the present study, we investigated whether NO could indirectly modulate the activity of TRPV1 via a cGMP/PKG-dependent pathway in cultured rat dorsal root ganglion (DRG) neurons. NO donors, sodium nitroprusside (SNP) and S-nitro-N-acetylpenicillamine (SNAP), decreased capsaicin-evoked currents ($I_{cap}$). NO scavengers, hemoglobin and 2-(4-carboxyphenyl)-4,4,5,5-tetramethylimidazoline-1-oxyl-3-oxide (CPTIO), prevented the inhibitory effect of SNP on $I_{cap}$. Membrane-permeable cGMP analogs, 8-bromoguanosine 3', 5'-cyclic monophosphate (8bromo-cGMP) and 8-(4chlorophenylthio)-guanosine 3',5'-cyclic monophosphate (8-pCPT-cGMP), and the guanylyl cyclase stimulator YC-1 mimicked the effect of SNP on $I_{cap}$. The PKG inhibitor KT5823 prevented the inhibition of $I_{cap}$ by SNP. These results suggest that NO can downregulate the function of TRPV1 through activation of the cGMP/PKG pathway in peripheral sensory neurons.

• Environmental Engineering Research
• /
• v.14 no.1
• /
• pp.41-47
• /
• 2009

Column experiments were performed in this study to investigate humic acid adhesion to iron oxide-coated sand (ICS) under different experimental conditions including influent humic acid concentration, flow rate, solution pH, and ionic strength/composition. Breakthrough curves of humic acid were obtained by monitoring effluents, and then column capacity for humic acid adsorption ($C_cap$), total adsorption percent (R), and mass of humic acid adsorbed per unit mass of filter media ($q_a$) were quantified from these curves. Results showed that humic acid adhesion was about seven times higher in ICS than in quartz sand at given experimental conditions. This indicates that humic acid removal can be enhanced through the surface charge modification of quartz sand with iron oxide coating. The adhesion of humic acid in ICS was influenced by influent humic acid concentration. $C_cap$ and $q_a$ increased while R decreased with increasing influent humic acid concentration in ICS column. However, the influence of flow rate was not eminent in our experimental conditions. The humic acid adhesion was enhanced with increasing salt concentration of solution. $C_cap$, $q_a$ and R increased in ICS column with increasing salt concentration. On the adhesion of humic acid, the impact of CaCl2 was greater than that of NaCl. Also, the humic acid adhesion to ICS decreased with increasing solution pH. $C_cap$, $q_a$ and R decreased with increasing solution pH. This study demonstrates that humic acid concentration, salt concentration/composition, and solution pH should be controlled carefully in order to improve the ICS column performance for humic acid removal from water.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2008.12a
• /
• pp.134.1-134.1
• /
• 2008

• Particle and aerosol research
• /
• v.15 no.4
• /
• pp.159-171
• /
• 2019

The cap-and-trade system against the air pollutants in the Seoul Metropolitan Area (SMA), Korea has been implemented since 2008 and will be implemented other areas in Korea on 2020. In this study, to identify the outcome and effectiveness of the cap-and-trade system in the SMA, (1) the rate of change for NOx and SOx emissions, (2) differences between the real emission and allocated amount, and (3) the status of trading are reviewed. It was found that the NOx and SOx emissions from the sources under the cap-and-trade system decreased in the SMA but the reduction was mainly due to the reduction of fuel usage not related to the system. It was found that the average percentage of annual emission in the SMA to the allocated amount between 2008 and 2018 was 66.9% for NOx and 69.3% for SOx, respectively. It suggests that there was over allocation of the emission amounts. The average trading prices in the SMA were 0.193 $/kg for NOx and 0.128 $/kg for SOx, far lower than those in RECLAIM, 131.942 $/kg and 81.677 $/kg, respectively. It was suggested that (1) the cap system for NOx and SOx emissions should be implemented only for the area with high emission ratio from large point sources, (2) the trade system is not suitable for the effective implementation of the cap system, and (3) Korean government should not allow over allocation in order to ensure sound market function without delaying the introduction of technology.

• Current Applied Physics
• /
• v.18 no.11
• /
• pp.1399-1402
• /
• 2018

Nanorod films of cobalt oxide ($Co_3O_4$) have been grown by a unique oblique angle deposition (OAD) technique in an e-beam evaporator for supercapacitor electrode applications. This technique offers a non-chemical route to achieve large aspect ratio nanorods. The fabricated electrodes at OAD $80^{\circ}$ exhibited a specific capacitance of 2875 F/g. The electrochemically active surface area was $1397cm^{-2}$, estimated from the non-Faradaic capacitive current region. Peak energy and power densities obtained for $Co_3O_4$ nanorods were 57.7 Wh/Kg and 9.5 kW/kg, respectively. The $Co_3O_4$ nanorod electrode showed a good endurance of 2000 charge-discharge cycles with 62% retention. The OAD approach for fabricating supercapacitor nanostructured electrodes can be exploited for the fabrication of a broad range of metal oxide materials.

• Current Applied Physics
• /
• v.18 no.11
• /
• pp.1300-1305
• /
• 2018

The tunable electronic performance of the solution-processed semiconductor metal oxide is of great significance for the printing electronics. In current work, transparent thin-film transistors (TFTs) with indium-zinc oxide (IZO) were fabricated as active layer by a simple eco-friendly aqueous route. The aqueous precursor solution is composed of water without any other organic additives and the IZO films are amorphous revealed by the X-ray diffraction (XRD). With systematic studies of atomic force microscopy (AFM), X-ray photoemission spectroscopy (XPS) and the semiconductor property characterizations, it was revealed that the electrical performance of the IZO TFTs is dependent on the concentration of precursor solution. As well, the optimum preparation process was obtained. The concentrations induced the regulation of the electronic performance was clearly demonstrated with a proposed mechanism. The results are expected to be beneficial for development of solution-processed metal oxide TFTs.

• Current Applied Physics
• /
• v.18 no.12
• /
• pp.1583-1591
• /
• 2018

We analysed perovskite $CH_3NH_3PbI_{3-x}Cl_x$ inverted planer structure solar cell with nickel oxide (NiO) and spiroMeOTAD as hole conductors. This structure is free from electron transport layer. The thickness is optimized for NiO and spiro-MeOTAD hole conducting materials and the devices do not exhibit any significant variation for both hole transport materials. The back metal contact work function is varied for NiO hole conductor and observed that Ni and Co metals may be suitable back contacts for efficient carrier dynamics. The solar photovoltaic response showed a linear decrease in efficiency with increasing temperature. The electron affinity and band gap of transparent conducting oxide and NiO layers are varied to understand their impact on conduction and valence band offsets. A range of suitable band gap and electron affinity values are found essential for efficient device performance.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.339-339
• /
• 2012

현재 MOS 소자에 사용되고 있는 $SiO_2$ 산화막은 그 두께가 얇아짐에 따라 Gate Leakage current와 여러 가지 신뢰성 문제가 대두되고 있고, 이를 극복하고자 High-k물질을 사용하여 기존에 발생했던 Gate Leakage current와 신뢰성 문제를 해결하고자 하고 있다. 본 실험에서는 High-k(hafnium) Gate Material에 온도 변화를 주었을 때 여러 가지 전기적인 특성 변화를 보는 방향으로 연구를 진행하였다. 기본적인 P-Type Si기판을 가지고, 그 위에 있는 자연적으로 형성된 산화막을 제거한 후 Hafnium Gate Oxide를 Atomic Layer Deposition (ALD)를 이용하여 증착하고, Aluminium을 전극으로 하는 MOS-Cap 구조를 제작한 후 FGA 공정을 진행하였다. 마지막으로 $300^{\circ}C$, $450^{\circ}C$로 30분정도씩 Annealing을 하여, 온도 조건이 다른 3가지 종류의 샘플을 준비하였다. 3가지 샘플에 대해서 각각 I-V (Gate Leakage Current), C-V (Mobile Charge), Interface State Density를 분석하였다. 그 결과 Annealing 온도가 올라가면 Leakage Current와 Dit(Interface State Density)는 감소하고, Mobile Charge가 증가하는 것을 확인할 수가 있었다. 본 연구는 향후 High-k 물질에 대한 공정 과정에서의 다양한 열처리에 따른 전기적 특성의 변화 대한 정보를 제시하여, 향후 공정 과정의 열처리에 대한 방향을 잡는데 도움이 될 것이라 판단된다.