• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.2236-2238
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• 2000

The paper represents the fabrication of an electrostatic micro actuator for optical devices. The micro actuator consists of a plate suspended four p+ silicon cantilevers and an electrode on a glass substrate. The cantilever curls down because of the residual stress gradient in p+ silicon. When input voltage is applied between the p+ cantilevers and the electrode. the cantilevers are pulled toward the electrode by the electrostatic force. The displacement of the plate is measured with a laser displacement meter for various input voltage and frequencies.

• 한국정밀공학회지
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• 제24권6호
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• pp.96-104
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• 2007

Calibration of the spring constants of atomic force microscopy (AFM) cantilevers is one of the issues in biomechanics and nanomechanies for quantified force metrology at pieo- or nano Newton level. In this paper, we present an AFM cantilever calibration system: the Nano Force Calibrator (NFC), which consists of a precision balance and a one-dimensional stage. Three types of AFM cantilevers (contact and tapping mode) with different shapes (beam and V) and spring constants (42, 1, 0.06 N $m^{-1}$) are investigated using the NFC. The calibration results show that the NFC can calibrate the micro cantilevers ranging from 0.01 ${\sim}$ 100 N $m^{-1}$ with relative uncertainties of less than 2%.

• 센서학회지
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• 제9권3호
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• pp.233-241
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• 2000

본 연구에서는 동일한 테스트 구조물을 사용하여 현재 다결정실리콘 표면 미세가공 기술에서 널리 사용되고 있는 여러 가지 점착 방지법들의 성능을 비교하였다. 테스트 구조물로는 다양한 폭과 길이를 갖는 일반적인 cantilever와 dimple, antistiction tip, plate를 가지는 cantilever를 사용하였으며 구조물 형태에 따른 점착 방지 결과를 관찰하였다. 희생층 제거 후 구조물과 기판의 점착을 결정하는 건조과정에서는 증발법과 승화건조법을 사용하였다. 증발법에서는 methanol, IPA, DI water 등을 여러 최종 세척액으로 사용하여 표면장력과 세척 온도에 따른 점착 방지 결과를 비교하였다. 승화건조법에서는 중간 세척액으로 methanol을 사용하였다. 그리고 동일한 실험조건으로 stress gradient가 있는 동일한 구조물을 사용하여 stress gradient에 의한 점착 방지 결과를 관찰하였다. 결론적으로 승화건조법이 여러 가지 증발법보다 우수한 결과를 보여주었고 다결정 실리콘 표면 미세가공 기술로 미세 구조물을 부양시킬 때 승화건조법이 가장 우수한 방법이라고 사료된다.

• Smart Structures and Systems
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• 제16권5호
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• pp.759-780
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• 2015

Based on the theory of piezoelasticity, the static performance of a piezoelectric bilayer cantilever fully covered with electrodes on the upper and lower surfaces is studied. Three models are considered, i.e., the sensor model, the driving displacement model and the blocking force model. By establishing suitable boundary conditions and proposing an appropriate Airy stress function, the exact solutions for piezoelectric bilayer cantilevers are obtained, and the effect of ambient thermal excitation is taken into account. Since the layer thicknesses and material parameters are distinguished in different layers, this paper gives unified solutions for composite piezoelectric bilayer cantilevers including piezoelectric bimorph and piezoelectric heterogeneous bimorph, etc. For some special cases, the simplifications of the present results are compared with other solutions given by other researches based on one-dimensional constitutive equations, and some amendments have been found. The present investigation shows: (1) for a PZT-4 piezoelectric bimorph, the amendments of tip deflections induced by an end shear force, an end moment or an external voltage are about 19.59%, 23.72% and 7.21%, respectively; (2) for a PZT-4-Al piezoelectric heterogeneous bimorph with constant layer thicknesses, the amendments of tip deflections induced by an end shear force, an end moment or an external voltage are 9.85%, 11.78% and 4.07%, respectively, and the amendments of the electrode charges induced by an end shear force or an end moment are both 1.04%; (3) for a PZT-4-Al piezoelectric heterogeneous bimorph with different layer thicknesses, the maximum amendment of tip deflection approaches 23.72%, and the maximum amendment of electrode charge approaches 31.09%. The present solutions can be used to optimize bilayer devices, and the Airy stress function can be used to study other piezoelectric cantilevers including multi-layered piezoelectric cantilevers under corresponding loads.

• 정보저장시스템학회논문집
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• 제2권2호
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• pp.96-99
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• 2006

In this research, a wafer-level transfer method of cantilever away on a conventional CMOS circuit has been developed for high density probe-based data storage. The transferred cantilevers were silicon nitride ($Si_3N_4$) cantilevers integrated with poly silicon heaters and piezoelectric sensors, called thermo-piezoelectric $Si_3N_4$ cantilevers. In this process, we did not use a SOI wafer but a conventional p-type wafer for the fabrication of the thermo-piezoelectric $Si_3N_4$ cantilever arrays. Furthermore, we have developed a very simple transfer process, requiring only one step of cantilever transfer process for the integration of the CMOS wafer and cantilevers. Using this process, we have fabricated a single thermo-piezoelectric $Si_3N_4$ cantilever, and recorded 65nm data bits on a PMMA film and confirmed a charge signal at 5nm of cantilever deflection. And we have successfully applied this method to transfer 34 by 34 thermo-piezoelectric $Si_3N_4$ cantilever arrays on a CMOS wafer. We obtained reading signals from one of the cantilevers.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 1996년도 춘계학술대회논문집; 부산수산대학교, 10 May 1996
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• pp.169-176
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• 1996

In order to suppress the structural vibration more effectively, Multiple Tuned Mass Damper(MTMD) which is composed of a number of Tuned Mass Damper(TMD) can be used. Especially, the passive MTMD has several advantages over active TMD like easy installment and maintenance, cost and performance for power failure situation(severe damage of power lines from earthquake), etc.. For this purpose the mass and damping ratio of MTMD and the distributed frequency range which shows the range of MTMD's distribution are used as main design parameters. When the passive MTMD is constituted with multiple cantilevers, the facility in its real production and its need for only a smaller space can be named as its several advantages. In this study, the satisfactory results were obtained from the composition of MTMD utilizing dynamic characters of cantilevers, and the verification was done by the comparison of the analysis from MTMD with the computer simulation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.250-250
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• 2008

This paper describes the resonant characteristics of polycrystalline SiC micro resonators. The $1{\mu}m$ thick polycrystalline 3C-SiC cantilevers with different lengths were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and their fundamental resonance was measured by a laser vibrometer in vacuum at room temperature. For the 100 ~ $40{\mu}m$ long cantilevers, the fundamental frequency appeared at 147.2 kHz - 856.3 kHz. The $100{\mu}m$ and $80{\mu}m$ long cantilevers have second mode resonant frequency at 857.5 kHz and 1.14 MHz. Therefore, polycrystalline 3C-SiC micro resonators are suitable for RF MEMS devices and bio/chemical sensor applications.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 정기총회 및 추계학술대회 논문집 학회본부
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• pp.192-194
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• 1993

In this paper, a silicon piezoresistive accelerometer of which the cantilevers have uniform thickness is designed and fabricated with SOI wafer. The accelerometer consists of a seismic mass and four cantilevers, and is fabricated mainly by the anisotropic etching method using EPW etchant. The fabrication processes are that of the frontside processes including the etching of the cantilevers and the doubleside alignment holes, the diffusion of the piezoresisters and patterning of the contact windows, and the metal connection process, and that of the backside processes including the etching of the shallow cavity and the seismic mass. Because of the uniformity of thickness, the performance of the accelerometer fabricated with SOI wafer is expected to be better than that of accelerometer fabricated by the time-controlled etching method.

• 센서학회지
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• 제17권6호
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• pp.425-428
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• 2008

This paper describes the resonant characteristics of polycrystalline SiC micro resonators. The $1{\mu}m$ thick polycrystalline 3C-SiC cantilevers with different lengths were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and their fundamental resonance was measured by a laser vibrometer in vacuum at room temperature. For the $100{\sim}40{\mu}m$ long cantilevers, the fundamental frequency appeared at $147.2kHz{\sim}856.3kHz$. The $100{\mu}m$ and $80{\mu}m$ long cantilevers have second mode resonant frequency at 857.5.kHz and 1.14.MHz, respectively. Therefore, polycrystalline 3C-SiC resonators are suitable for RF MEMS devices and bio/chemical sensor applications.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권1호
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• pp.24-29
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• 2005

Silicon nitride cantilevers integrated with silicon heaters and piezoelectric sensors were developed for the scanning probe microscope (SPM) based data storage application. These nitride cantilevers are expected to have better mechanical stability and uniformity of initial bending than the previously developed silicon cantilevers. Data bits of 40 nm in diameter were recorded on PMMA film and the sensitivity of the piezoelectric sensor was 0.615 fC/nm, meaning that indentations less than 20 nm in depth can be detected. For high speed operation, $128{\times}128$ cantilever array was developed.