• Korean Journal of Metals and Materials
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• v.46 no.1
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• pp.33-38
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• 2008

The interfacial reactions and shear strength of pure Sn solder bump were investigated with different under bump metallizations (UBMs) and reflow numbers. Two different UBMs were employed in this study: Cu and Ni. Cu6Sn5 and Cu3Sn intermetallic compounds (IMCs) were formed at the bump/Cu UBM interface, whereas only a Ni3Sn4 IMC was formed at the bump/Ni UBM interface. These IMCs grew with increasing reflow number. The growth of the Cu-Sn IMCs was faster than that of the Ni-Sn IMC. These interfacial reactions greatly affected the shear properties of the bumps.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.11a
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• pp.419-420
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• 2008

• Journal of the Microelectronics and Packaging Society
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• v.8 no.1
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• pp.33-38
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• 2001

We investigate the via-size dependance of as-electroplated- and reflow-bump shapes for realizing both high-density and high-aspect ratio of solder bump. The solder bump is fabricated by subsequent processes as follows. After sputtering a TiW/Al electrode on a 5-inch Si-wafer, a thick photoresist for via formation it obtained by multiple-codling method and then vias with various diameters are defined by a conventional photolithography technique using a contact alinger with an I-line source. After via formation the under ball metallurgy (UBM) structure with Ti-adhesion and Cu-seed layers is sputtered on a sample. Cu-layer and Sn/pb-layer with a competition ratio of 6 to 4 are electroplated by a selective electroplating method. The reflow-bump diameters at bottom are unchanged, compared with as-electroplated diameters. As-electroplated- and reflow-bump shapes, however, depend significantly on the via size. The heights of as-electroplated and reflow bumps increase with the larger cia, while the aspect ratio of bump decreases. The nearest bumps may be touched by decreasing the bump pitch in order to obtain high-density bump. The touching between the nearest bumps occurs during the overplating procedure rather than the reflowing procedure because the mushroom diameter formed by overplating is larger than the reflow-bump diameter. The arrangement as zig-zag rows can be effective for realizing the flip-chip-interconnect bump with both high-density and high-aspect ratio.

• Tribology and Lubricants
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• v.22 no.5
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• pp.252-259
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• 2006

Air foil bearing supports the rotating journal using hydrodynamic force generated at thin air film. The bearing performances, stiffness, damping coefficient and load capacity, depend on the rotating speed and the performance of the elastic foundation, bump foil. The main focus of this study is to decide the dynamic performance of corrugated bump foil, structural stiffness and Coulomb damping caused by friction between bump foil and top foil/bump foil and housing. Structural stiffness is determined by the bump shape (bump height, pitch and bump thickness), dry-friction, and interacting force filed up to fixed end. So, the change of the characteristics was considered as the parameters change. The air foil bearing specification for analysis follows the general size; diameter 38.1 mm and length 38.1 mm (L/D=1.0). The results show that the stiffness at the fixed end is more than the stiffness at the free end, Coulomb damping is more at the fixed end due to the small displacement, and two dynamic characteristics are dependent on each other.

• Journal of the Korean Society for Precision Engineering
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• v.31 no.10
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• pp.865-871
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• 2014

Paradigm shift to 3-D chip stacking in electronic packaging has induced a lot of integration challenges due to the reduction in wafer thickness and pitch size. This study presents a hybrid bonding technology by self-alignment effect in order to improve the flip chip bonding accuracy with ultra-thin wafer. Optimization of Cu pillar bump formation and evaluation of various factors on self-alignment effect was performed. As a result, highly-improved bonding accuracy of thin wafer with a $50{\mu}m$ of thickness was achieved without solder bridging or bump misalignment by applying reflow process after thermo-compression bonding process. Reflow process caused the inherently-misaligned micro-bump to be aligned due to the interface tension between Si die and solder bump. Control of solder bump volume with respect to the chip dimension was the critical factor for self-alignment effect. This study indicated that bump design for 3D packaging could be tuned for the improvement of micro-bonding quality.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2006.05a
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• pp.1135-1141
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• 2006

Air foil bearing supports the rotating journal using hydrodynamic force generated at thin air film. The bearing performance, stiffness, damping coefficient and load capacity, depends on the rotating speed and the performance of the elastic foundation, bump foil. The main focus of this study is to decide the dynamic performance of corrugated bump foil, structural stiffness and Coulomb damping caused by friction between bump foil and top foil/bump foil and housing. Structural stiffness is determined by the bump shape (bump height, pitch and bump thickness), dry-friction, and interacting force filed up to fixed end. So, the change of the characteristics was considered as the parameters change. The air foil bearing specification for analysis follows the general size; diameter 38.1 mm and length 38.1mm (L/D=1.0). The results show that the stiffness at the fixed end is more than the stiffness at the free end, Coulomb damping is more at the fixed end due to the small displacement, and two dynamic characteristics are dependent on each other.

• Korean Journal of Metals and Materials
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• v.46 no.5
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• pp.310-314
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• 2008

Electromigration test of flip chip solder bump is performed at $140^{\circ}C$ C and $4.6{\times}10^4A/cm^2$ conditions in order to compare electromigration with thermomigration behaviors by using electroplated Sn-3.5Ag solder bump with Cu under-bump-metallurgy. As a result of measuring resistance with stressing time, failure mechanism of solder bump was evaluated to have four steps by the fail time. Discrete steps of resistance change during electromigration test are directly compared with microstructural evolution of cross-sectioned solder bump at each step. Thermal gradient in solder bump is very high and the contribution of thermomigration to atomic flux is comparable with pure electromigration effect.

• Proceedings of KOSOMES biannual meeting
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• 2005.11a
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• pp.197-202
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• 2005

Generally, a semiconductor chip measured with a few micro units is captured by line scan camera for higher inspection accuracy. However, the faulty inspection requires an exact boundary detection algorithm because it is very sensitive to scan speed and lighting conditions. In this paper we propose boundary detection using subpixel edge detection method in order to increase the accuracy of bump faulty detection on chips. The bump edge is detected by first derivative to four directions from bump center point and the exact edge positions are searched by the subpixel method. Also, the exact bump boundary to calculate the actual bump size is computed by LSM(Least Squares Method) to minimize errors since the bump size is varied such as bump protrusion, bump bridge, and bump discoloration. Experimental results exhibit that the proposed algorithm shows large improvement comparable to the other conventional boundary detection algorithms.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.4
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• pp.793-799
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• 2007

Generally, a semiconductor chip measured with a few micro units is captured by line scan camera for higher inspection accuracy. However, the faulty inspection requires an exact boundary detection algorithm, because it is very sensitive to scan speed and lighting conditions. In this paper we propose boundary detection with subpixel edge detection in order to increase the accuracy of bump faulty detection on chips. The bump edge is detected by first derivative to four directions from bump center point and the exact edge positions are searched by the subpixel method. Also, the exact bump boundary to calculate the actual bump size is computed by LSM(Least Squares Method) to minimize errors since the bump size is varied such as bump protrusion, bump bridge, and bump discoloration. Experimental results exhibit that the proposed algorithm shows large improvement comparable to the other conventional boundary detection algorithms.

• Journal of the Microelectronics and Packaging Society
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• v.31 no.1
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• pp.35-42
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• 2024

Recently, with the miniaturization and high integration of semiconductor chips, the bump bridge phenomenon caused by fine pitches is drawing attention as a problem. Accordingly, Cu pillar bump, which can minimize the bump bridge phenomenon, is widely applied in the semiconductor package industry for fine pitch applications. When exposed to a high-temperature environment, the thickness of the intermetallic compound (IMC) formed at the joint interface increases, and at the same time, Kirkendall void is formed and grown inside some IMC/Cu and IMC interfaces. Therefore, it is important to control the excessive growth of IMC and the formation and growth of Kirkendall voids because they weaken the mechanical reliability of the joints. Therefore, in this study, isothermal aging evaluation of Cu pillar bump joints with a CS (Cu+ Sn-1.8Ag Solder) structure was performed and the corresponding results was reported.