Kim, Jeong-Han;Jeon, Dae-Hoon;Kang, Young-Ju;Jeoung, Yun-Kyeoung;Lee, Yun-Hae;Chi, Jeong-Hyun
The Korean Journal of Mycology
/
v.44
no.3
/
pp.150-154
/
2016
To determine a favorable substrate formulation for Grifola frondosa, physicochemical conditions, culture properties, and yields according to various substrate formulations were investigated. Based on these analyses, T4 (80:5:15 ratio of oak sawdust to dried bean-curd refuse to corn husk) resulted in a shorter cultivation period and higher yields (weight of fresh mushrooms harvested at maturity) than those of other treatments. The physicochemical properties of T4 were pH 5.4, 2.4% crude fat contents, 54 C/N ratio, 74.3% porosity, and 0.26 g/cm3 bulk density. These results emphasize the importance of optimal substrate development on the production efficiency of G. frondosa mushrooms and have implications for commercial applications.
A new copolymer named T-TI24T (poly((5,5-(2-butyl-5,6-bisdecyloxy-4,7-di-thiophen-2-yl-isoindole-1,3-dione))- alt-(2,5-thiophene))) based on phthalimide derivative and thiophene is synthesized by the Stille-coupling reaction. The polymer shows relatively high number average molecular weight of 86500 g/mol with good solubility in common organic solvents such as chloroform, 1,2-dichlorobenzene, and toluene and is thermally stable up to $380^{\circ}C$. Besides, it possesses a relatively low highest occupied molecular orbital (HOMO) energy level of -5.33 eV, promising the high open circuit voltage ($V_{oc}$) for photovoltaic applications. Active layer solution of polymer T-TI24T-as a donor and (6)-1-(3-(methoxycarbonyl)- {5}-1-phenyl[5,6]-fullerene (PCBM)-as an acceptor in different weight ratios is applied to fabricate the polymer solar cell devices. The ratio of polymer/PCBM affects the solar cell efficiency and the best performance exhibits in the device with polymer/PCBM = 1:3 (w/w), which shows a power conversion efficiency (PCE) of 0.199% and a $V_{oc}$ of 0.99 V, respectively. Even though the device shows the very low PCE, the $V_{oc}$ is higher than that of well known bulk heterojunction type solar cell based on P3HT:PC61BM (c.a. 0.5 V).
Ha, Seung-Seok;You, Chun-Yeol;Lee, Suk-Mock;Ohta, Kenta;Nozaki, Takayuk;Suzuki, Yoshishige;Roy, W. Van
Journal of the Korean Magnetics Society
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v.18
no.4
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pp.147-153
/
2008
It has been well-known that the Fe/GaAs heterostructure has a small lattice mismatch of 1.4% between Fe and GaAs, and the Fe layer is grown epitaxially on the the GaAs substrate. There are rich physics are observed in the GaAs/Fe interface, and the spininjection is actively studied due to its potential applications for spintronics devices. We fabricated Fe wedge layer in the thickness range $0{\sim}3.4$ nm on the GaAs(100) surface with 5-nm thick Au capping layer. The magnetic anisotropy of the Fe/GaAs system was investigated by employing Brillouin light scattering(BLS) measurements in this study. The spin wave excitation of Fe layer was studied as the function of intensity and the in-plane angle of external magnetic field, and thickness of Fe layer. Also these various dependences were analyzed with analytic expression of spin wave surface mode in order to determine the magnetic anisotropies. It has been found that the GaAs/Fe/Au system has additional uniaxial magnetic anisotropy, while the bulk Fe has biaxial anisotropy. The uniaxial anisotropy shows increasing dependency respected to decreasing thickness of Fe layer while biaxial anisotropy is reduced with Fe film thickness. This result allows the analysis that the uniaxial anisotropy is originated from interface between GaAs surface and Fe layer.
The remarkable mechanical, electrical, and thermal properties of graphene have recently sparked tremendous interest in various research fields. One of the most promising methods to produce large quantities of graphene dispersion is liquid-phase exfoliation (LPE) which utilizes ultrasonic waves or shear stresses to exfoliate bulk graphite into graphene flakes that are a few layers thick. Graphene dispersion produced via LPE can be transformed into graphene ink to further boost graphene's applications, but producing high-quality graphene more economically remains a challenge. To overcome this shortcoming, an advanced LPE process should be developed that uses relatively cheap natural graphite as a graphene source. In this study, a flow-LPE process was used to exfoliate natural graphite to produce graphene that was three times cheaper and seven times larger than synthetic graphite. The optimal exfoliation conditions in the flow-LPE process were determined in order to produce high-quality graphene flakes. In addition, the structural and electrical properties of the flakes were characterized. The electrical properties of the exfoliated graphene were investigated by carrying out an ink formulation process to prepare graphene ink suitable for inkjet printing, and fabricating a printed graphene pattern. By utilizing natural graphite, this study offers a potential protocol for graphene production, ink formulation, and printed graphene devices in a more industrial-comparable manner.
Hyeong-Yun Kim;Sunjae Kim;Hyeon-U Cheon;Jae-Hyeong Lee;Dae-Woo Jeon;Ji-Hyeon Park
Korean Journal of Materials Research
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v.33
no.12
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pp.525-529
/
2023
β-Ga2O3 has become the focus of considerable attention as an ultra-wide bandgap semiconductor following the successful development of bulk single crystals using the melt growth method. Accordingly, homoepitaxy studies, where the interface between the substrate and the epilayer is not problematic, have become mainstream and many results have been published. However, because the cost of homo-substrates is high, research is still mainly at the laboratory level and has not yet been scaled up to commercialization. To overcome this problem, many researchers are trying to grow high quality Ga2O3 epilayers on hetero-substrates. We used diluted SiH4 gas to control the doping concentration during the heteroepitaxial growth of β-Ga2O3 on c-plane sapphire using metal organic chemical vapor deposition (MOCVD). Despite the high level of defect density inside the grown β-Ga2O3 epilayer due to the aggregation of random rotated domains, the carrier concentration could be controlled from 1 × 1019 to 1 × 1016 cm-3 by diluting the SiH4 gas concentration. This study indicates that β-Ga2O3 hetero-epitaxy has similar potential to homo-epitaxy and is expected to accelerate the commercialization of β-Ga2O3 applications with the advantage of low substrate cost.
Journal of the Microelectronics and Packaging Society
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v.29
no.4
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pp.63-69
/
2022
Vanadium dioxide shows a unique and interesting property of metal-insulator transition, which has attracted great attention from the viewpoints of fundamental materials science and industrial applications. In this study, the effect of Mg and W addition on the metal-insulator transition of VO2 were investigated for the bulk materials that are prepared by spark plasma sintering. The X-ray diffraction analysis of the sintered specimens revealed that the lattice parameters barely change, and the secondary phases are present. The transition temperature of MIT appears in the range of 64.2-64.6℃, regardless of the impurity element and content. On the other hand, the addition of Mg and W alters the electrical conductivity, i.e., the electrical conductivity increases by a factor of up to 2.4 or decrease by a factor of up to 57.4 depending on the impurity type and its content. The thermal conductivity showed the values of 1.8~2.5 W/m·K below the transition temperature, and the values of 1.9~2.8 W/m·K above the transition temperature. These changes in electrical and thermal conductivities can be attributed to the combination of the change in charge carrier density, the impurities as scattering centers, and the change in microstructures.
Proceedings of the Korean Vacuum Society Conference
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2012.08a
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pp.154-155
/
2012
The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (< $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.
This experiment was carried out to investigate the effects of long-term applications of rice straw and compost on the physical and mechanical properties of paddy fields and the yearly variation of rice yield in Fluvio-Marine plain of Jeonbug series. Amounts of rice straw and compost applied in this experiment were 500kg/10a, 1,000kg/10a respectively, and the nitrogen levels were 0, 15 and 20kg/10a. This experiment were continued for 9 years from 1979 to 1987. The results are summarized as follows: 1. Clay and silt ratios were decreased but versa in sand ratio, by the long-term application of rice straw and compost. 2. Bulk density in the long-term application of organic matter was lower in surface soil of non-application than nitrogen application (15kg/10a) and in rice straw than compost. 3. Solid ratio went down, but liquid and gaseous ratio went up especially, by organic matter application liquid ratio were increased by compost and gaseous ratio were increased by in rice straw. 4. Aggregates of bigger than 2mm were increased by long-term application of organic matter, and the effects was better in rice straw than compost. Accumulative aggregate of 2mm was 66.5% in nitrogen of 15kg/ 10a with rice straw, which showed the increase of 9.1% in comparison with the non-application of nitrogen and organic matter. 5. Liquid limit, plastic limit and plastic index were high in order of rice straw, compost and control, and liquid index was lower in compost than in rice straw. 6. Cole value was higher in vertical than horizontal and highest in the application of rice straw with nitrogen of 15kg/10a. Cone and shearing resistance were lowest in the application of rice straw with nitrogen. In total vertical pressure friction was higher in the long-term application of organic matter than control. 7. The change of yield index was higher in the long-term application of compost than rice straw in non-nitrogen and it showed the yearly competitive variation between the long-term application of compost and rice straw in nitrogen of 10kg/10a. In nitrogen application of 20kg/10a, it was increased from 6th year by rice straw application.
This study was conducted in the sandy loam soil to find out the effects of fly ash and zeolite applications on saving of irrigation water which was required great quantities during the cultivation days of dry seeded rice. Total water loss was reduced so rapidly in the early growth stage that n was the least in the 18th day after irrigation. After that day it was increasd due to the growth development and the rising temperature. In the daily mean of decreasing water level during the whole irrigation days, control was 47.7mm but the treatments of fly ash and zeolite were 31.8mm and 35.8mm respectively Amounts of the presumed irrigation water of fly ash and zeolite treatments were lower about 29.1% and 20.9%. respectively than that of control during the whole irrigation days These gaps between control and amendment treatments were greater in the early growth stage than in the late stage Hardness, bulk density and the ratio of solid phase in the soil after experiment were the highest in the fly ash treatment and those of control and zeolite treatments were showed the same trends each other. Amounts of water percoration of control and zeolite treatments in the soil were increased 8.2% and 2.6% respectively in comparision with those in the soil after amendment application, but that of fly ash treatment was decreased 42.5%, In contrast to the water percoration of control in the soil after experiment, those of fly ash and zeolite treatments were decreased 76% and 32%.
Defining soil quality in scopes and applications is one of the prerequisite for the sustainable management of soil environment to orient researches, strategies and policies. However, definition of soil quality is controversial depending upon a viewpoint of soil science or soil environment. Soil quality can be, irrespective of the disciplines, defined as the capacity of a soil to function within ecosystem boundaries to sustain biological productivity, maintain environmental quality and promote plant and animal health. Common to all of the soil quality concepts can be summarized as the capacity of soil to function effectively at present and in the future. The OECD includes soil quality as one of the agri-environment indicators. This article intends to i) summarize the current soil quality research, and ii) provide information on protocol of soil quality assessment. A framework for soil quality was divided into three steps: indicator selection as minimum data set (MDS), scoring of the selected indicators, and integration of scores into soil quality index. Korean government suggested possible physical and chemical indicators such as bulk density and organic matter for paddy and upland soils to OECD. The framework of soil quality assessment is not yet implemented in Korea. Countries such as USA, Canada and New Zealand have constructed the framework on soil quality assessment and developed a user-friendly version of soil quality assessment tools to evaluate the integrated effects of various soil management practices. The protocol provided in this review might help policymakers, scientists, and administrators improve awareness about soil quality and understand the way of soil environment management.
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