• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.4
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• pp.210-213
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• 2017

In this paper, we analyzed the structural design and electrical characteristics of a 3.3 kV super junction FS IGBT as a next generation power device. The device parameters were extracted by design and process simulation. To obtain optimal breakdown voltage, we researched the breakdown characteristics. Initially, we confirmed that the breakdown voltage decreased as trench depth increased. We analyzed the breakdown voltage according to p pillar dose. As a result of the experiment, we confirmed that the breakdown voltage increased as p pillar dose increased. To obtain more than 3.3 kV, the p pillar dose was $5{\times}10^{13}cm^{-2}$, and the epi layer resistance was $140{\Omega}$. We extracted design and process parameters considering the on state voltage drop.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.7
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• pp.502-507
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• 1998

The purpose of this study is to investigate the breakdown properties in joint interface of power cables with heat treatment. The specimens have the structure of XLPE/EPDM interface like the joint of distribution power cable. The breakdown characteristics of the SLPE/EPDM joint were studied with crosslinking by=products. AC breakdown voltages were measured with heat treatment time and interfacial materials and crosslinking by-products as testing factors. This study has shown that crosslinking by-product gases play an important role at the insulation properties of cable joints by heating. The dielectric strength shows the lowest values at 4 hours heat treatment. The AC breakdown strength in the untreated sample was increased with heat treatment time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.540-543
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• 1999

In order to determine what indluences the interfacial breakdown in EPDM/XLPE laminates. We studied the interfacial breakdown phenomena at several interfacial conditions. Breakdown strength in laminates pasted with silicone oil was higher than that with silicone grease. As a function of heat treatment time in a vacuum, interfacial breakdown strength increased much in XLPE/EPDM laminates pasted with silicone grease but increased a little in that with silcone oil. FT-IR spectrum of silicone oil was similar to that is silicone grease. FT-lR spectrum of silicone oil was not changed by the heat treatment in a vacuum, but in silicone grease another peak appeared.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.239-242
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• 1999

In this study, we evaluates the dependence of thickness and temperature in the breakdown strength of MDPE and effect of semiconductor. As the result, breakdown strength trend to decrease according to the increase of thickness and temperature but there is no dependence of temperature in the 70${\mu}{\textrm}{m}$ MDPE film. We obtained the result that the breakdown strength was a little lower in the structure of Semil/MDPE than Semi/MDPE/Semi, but breakdown strength of MDPE was greater both of all. Therefore we are investigating the effect of semiconductor in the breakdown strength.

• 전기의세계
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• v.29 no.2
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• pp.129-132
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• 1980

For large gas-insulated systems, the conductor utilized possess some degree of surface roughness which locally enhances the applied field at highpressure in $SF_{6}$. In order to investigate the effect of field enhancement on the breakdown field strength, the spheric protrusion was employed which gives a quantitative analysis on field enhancement. For further investigations on the breakdown level and polarity effect in $SF_{6}$, the repeated breakdown tests were performed with d.c. voltage at pressures up to about 4 bar. The experimental results show that the breakdown level does vary noticeably due to successive voltage applications and the breakdown field strength measured for a test gap with the cathode protrusion is markedly lower than that determined from the identical anode protrusion.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.4
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• pp.490-495
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• 1995

A bipolar junction transistor which exihibits 1000V breakdown voltage is designed and fabricated using FLR (Field Limiting Rings). Three dimensional effects on the breakdown voltage is investigated in the cylindrical coordinate and the simulation results are compared with the results in the rectangular coordinate. Breakdown voltage of the device with 3 FLR is simulated to be 1420V in the cylindrical coordinate while it is 1580V in rectangular coordinate. Bipolar junction transistor has been fabricated using the epitaxial wafer of which resistivity is 86 .OMEGA.cm and thickness is 105 .mu.m. Si$_{3}$N$_{4}$ and glass are employed for the passivation. Breakdown of the fabricated device is measured to be 1442V which shows better greement with the simulation results in cylindrical coordination.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.6
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• pp.300-304
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• 2004

We have proposed the junction termination design employing shallow trench filled with silicon dioxide and field limiting ring (FLR). We have designed trenches between P+ FLRs to decrease the junction termination radius without sacrificing the breakdown voltage characteristics. We have successfully fabricated and measured improved breakdown voltage characteristics of the Proposed device for 1200 V-class applications. The junction termination radius of the proposed device has decreased by 15%-21% compared with that of the conventional FLR at the identical breakdown voltage. The junction termination area of the proposed device has decreased by 37.5% compared with that of the conventional FLR. The breakdown voltage of the proposed device employing 7 trenches was 1156 V, which was 80% of the ideal parallel-plane .junction breakdown voltage.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.49 no.3
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• pp.152-158
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• 2000

This paper deal with the experimental discussion about the impulse and AC dielectric strength of SF6 gas insulated transformer. Test sample is measured the dielectric breakdown voltage about modeling of the first and second section which is the weakest for surge voltage. The AC breakdown voltage is appeared 1.4 times than impulse breakdown voltage, so we can estimate that the impulse breakdown voltage is severe to AC breakdown voltage, and when the impulse is applied, in case of lmm tapping with Nomex paper, the characteristics of dielectric breakdown voltage is same to that in oil immersed transformer when SF6 gas pressure is 2.2kg/$cm^2$G.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.597-600
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• 2001

In order to investigate the electrical properties of X-ray tube oils for insulating and cooling, the breakdown characteristics in temperature range of 20∼100[$^{\circ}C$], that of AC breakdown in 0.5∼2.5(mm) of gap length, we are made researches. The classification for the physical properties of oil for X-ray tube by FTIR and $^1$H-NMR experiments was confirmed to type of mineral oils. As for the dependance of breakdown characteristics due to electrode gap length, breakdown voltage was found nearly uniform by impurity effect according to the increase of gap. As a result the characteristics for AC breakdown, the dielectric strength was increased to 90[$^{\circ}C$] but decreased over 90[$^{\circ}C$] in the temperature range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1990.10a
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• pp.102-104
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• 1990

In this paper, we studied and investigated as to temperature dependence of dielectric breakdown properties, and the dielectric breakdown properties, and deterioration-proof properties due to interface treatment effect. In the result, we knew that temperature dependence of dielectric breakdown strength due to filler content was decreased, identified that D.C. dielectric breakdown strength was improved at the filler content 50[%]. When the D.C. voltage was applied to the non silane and silane treated specimens deal with mechanical deterioration, the dielectric breakdown strength was improved at the 150[%].