• Carbon letters
• /
• v.27
• /
• pp.1-11
• /
• 2018

A simple, but effective means of tailoring the physical and chemical properties of carbon materials should be secured. In this sense, chemical doping by incorporating boron or nitrogen into carbon materials has been examined as a powerful tool which provides distinctive advantages over exohedral doping. In this paper, we review recent results pertaining methods by which to introduce boron atoms into the $sp^2$ carbon lattice by means of high-temperature thermal diffusion, the properties induced by boron doping, and promising applications of this type of doping. We envisage that intrinsic boron doping will accelerate both scientific and industrial developments in the area of carbon science and technology in the future.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.411.1-411.1
• /
• 2016

In this study, we examined the effects of boron doping on the dielectric reliability of solution processed aluminum oxide ($Al_2O_3$). When boron is doped in aluminum oxide, the hysteresis reliability is improved from 0.5 to 0.4 V in comparison with the undoped aluminum oxide. And the accumulation capacitance is increased when boron was doped, which implying the reduction of the thickness of dielectric film. The improved dielectric reliability of boron-doped aluminum oxide is originated from the small ionic radius of boron ion and the stronger bonding strength between boron and oxygen ions than that of between aluminum and oxygen ions. Strong boron-oxygen ion bonding in aluminum oxide results dielectric film denser and thinner. The leakage current of aluminum oxide also reduced when boron was doped in aluminum oxide.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.48 no.8
• /
• pp.563-569
• /
• 1999

Boron doped CdS films were prepared by chemical bath deposition using boric acid$(H_3BO_3)$ as donor dopant source, and their electrical, optical properties were investigated as a function of doping concentration. In addition, effects of boron doping of CdS films on characteristics of CdS/CdTe solar cells were investigated. Boron doping highly decreased the resistivity and slightly increased optical band gap of CdS films. The lowest value of resistivity was $2 \Omega-cm \;at\; H_3BO_3/Cd(Ac)_2$ molar ratio of 0.1. For the molar ratio more than 0.1, however, the resistivity increased because of decreasing carrier concentration and mobility and showed similar value for undoped films. The photovoltaic characteristics of CdS/CdTe solar cells with boron doped CdS film improved due to the decrease of the conduction band-Fermi level energy gap of CdS films and the series resistance of solar cell.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.140-140
• /
• 2010

Non-mass analyzed ion shower doping (ISD) technique with a bucket-type ion source or mass-analyzed ion implantation with a ribbon beam-type has been used for source/drain doping, for LDD (lightly-doped-drain) formation, and for channel doping in fabrication of low-temperature poly-Si thin-film transistors (LTPS-TFT's). We reported an abnormal activation behavior in boron doped poly-Si where reverse annealing, the loss of electrically active boron concentration, was found in the temperature ranges between $400^{\circ}C$ and $650^{\circ}C$ using isochronal furnace annealing. We also reported reverse annealing behavior of sequential lateral solidification (SLS) poly-Si using isothermal rapid thermal annealing (RTA). We report here the importance of implantation conditions on the dopant activation. Through-doping conditions with higher energies and doses were intentionally chosen to understand reverse annealing behavior. We observed that the implantation condition plays a critical role on dopant activation. We found a certain implantation condition with which the sheet resistance is not changed at all upon activation annealing.

• Journal of the Semiconductor & Display Technology
• /
• v.16 no.4
• /
• pp.20-24
• /
• 2017

Currently, techniques mainly used in semiconductor impurity diffusion processes include furnace thermal diffusion, ion implantation, and vacuum plasma doping. However, there is a disadvantage that the process equipment and the unit cost are expensive. In this study, boron diffusion process using relatively inexpensive atmospheric plasma was conducted to solve this problem. With controlling parameters of Boron diffusion process, the doping characteristics were analyzed by using secondary ion mass spectrometry. As a result, the influence of each variable in the doping process was analyzed and the feasibility of atmospheric plasma doping was confirmed.

• Analytical Science and Technology
• /
• v.13 no.6
• /
• pp.705-711
• /
• 2000

We have studied the structural characterization, surface morphology and electrical properties for boron dopped polyacene anode material from phenolic resin for lithium secondary battery. The boron dopped anode material were characterized as boron contents of 5, 10, 15 and 20%, respectively. From the X-ray results, the all kinds of compounds were observed for the diffraction patterns for typical amorphous carbons. The SEM morphology showed formation of semi spherical granule for the boron dopped compounds. As the result of the electrical charge/discharge and impedance data, the 10 and 15% boron dopped materials showed good properties on the ions and electron transfer effect of battery.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2002.08a
• /
• pp.171-174
• /
• 2002

When boron ions are doped into the poly-Si films, the hydrogen ions doped with boron ions compensate the defect sites and suppress to produce damage density. These samples can be easily activated by hydrogen doping at high acceleration voltage($V_{acc}$).

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.7 no.5
• /
• pp.1032-1037
• /
• 2003

Boron-doped CdS thin films were chemically deposited onto glass substrates. X-ray diffraction (XRD), photoluminescence (PL), and Raman techniques were used to evaluate the quality of B-doped CdS films. XRD results have confirmed that B-doped CdS films has a hexagonal structure with a preferential orientation of the (002) plane. The PL spectra for all samples consists of two prominent broad bands around 2.3 eV (green emission) and 1.6 eV (red emission) and the higher doping concentrations gradually decreased the green emission and red emission. Raman analysis has shown that undoped films have structure superior to those of B-doped CdS films. Boron doping into CdS films improved the optical transmittance and increased the optical band gap.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.3 no.1
• /
• pp.59-65
• /
• 1993

The boron-doped polycrystalline silicon films which can be used in pressure sensors were fabricated in a high-vacuum resistance heating evaporator. Poly-Si films were deposited on quartz substrates at various temperatures and the boron was doped to the silicon film in a diffusion furnace using BN wafer. The silicon films deposited at $500^{\circ}C$ was amorphous, began to show crystalline at $600^{\circ}C$, and became polycrystalline at $700^{\circ}C$. After doping boron at $900^{\circ}C$for 10 minutes, the resistivity of the films was in the range of $0.1{\Omega}cm~1.5{\Omega}cm$, the boron density was $9.4\times10^{15}~2.1\times{10}^{17}cm^{-3}$, and the grain size was $107{\AA}~191{\AA}$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.322-322
• /
• 2010

For boron doping on n-type silicon wafer, around $1,000^{\circ}C$ doping temperature is required, because of the relatively low solubility of boron in a crystalline silicon comparing to the phosphorus case. Boron doping by fiber laser annealing and lamp furnace heat treatment were carried out for the uniformly deposited p-a-Si:H layer. Since the uniformly deposited p-a-Si:H layer by cluster is highly needed to be doped with high temperature heat treatment. Amorphous silicon layer absorption range for fiber laser did not match well to be directly annealed. To improve the annealing effect, we introduce additional lamp furnace heat treatment. For p-a-Si:H layer with the ratio of $SiH_4:B_2H_6:H_2$=30:30:120, at $200^{\circ}C$, 50 W power, 0.2 Torr for 30 min. $20\;mm\;{\times}\;20\;mm$ size fiber laser cut wafers were activated by Q-switched fiber laser (1,064 nm) with different sets of power levels and periods, and for the lamp furnace annealing, $980^{\circ}C$ for 30 min heat treatment were implemented. To make the sheet resistance expectable and uniform as important processes for the $p^+$ layer on a polished n-type silicon wafer of (100) plane, the Q-switched fiber laser used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the fiber laser treatment showed the trade-offs between the lifetime and the sheet resistance as $100\;{\omega}/sq.$ and $11.8\;{\mu}s$ vs. $17\;{\omega}/sq.$ and $8.2\;{\mu}s$. Diode level device was made to confirm the electrical properties of these experimental results by measuring C-V(-F), I-V(-T) characteristics. Uniform and expectable boron heavy doped layers by fiber laser and lamp furnace are not only basic and essential conditions for the n-type crystalline silicon solar cell fabrication processes, but also the controllable doping concentration and depth can be established according to the deposition conditions of layers.