Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Study of Boron Doping Feasibility with Atmospheric Pressure Plasma for p-n Junction Formation on Silicon Wafer for Semiconductor

p-n 접합 형성을 위한 반도체 실리콘 웨이퍼 대기압 플라즈마 붕소 확산 가능성 연구

  • Kim, Woo Jae (Kwangwoon University Dept. of Electrical and Biological Physics) ;
  • Lee, Hwan Hee (Kwangwoon University Dept. of Electrical and Biological Physics) ;
  • Kwon, Hee Tae (Kwangwoon University Dept. of Electrical and Biological Physics) ;
  • Shin, Gi Won (Kwangwoon University Dept. of Electrical and Biological Physics) ;
  • Yang, Chang Sil (Youth International Tech Co., Ltd.) ;
  • Kwon, Gi-Chung (Kwangwoon University Dept. of Electrical and Biological Physics)
  • 김우재 (광운대학교 전자바이오물리학과) ;
  • 이환희 (광운대학교 전자바이오물리학과) ;
  • 권희태 (광운대학교 전자바이오물리학과) ;
  • 신기원 (광운대학교 전자바이오물리학과) ;
  • 양창실 (와이아이테크(주)) ;
  • 권기청 (광운대학교 전자바이오물리학과)
  • Received : 2017.11.22
  • Accepted : 2017.12.21
  • Published : 2017.12.31
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Abstract

Currently, techniques mainly used in semiconductor impurity diffusion processes include furnace thermal diffusion, ion implantation, and vacuum plasma doping. However, there is a disadvantage that the process equipment and the unit cost are expensive. In this study, boron diffusion process using relatively inexpensive atmospheric plasma was conducted to solve this problem. With controlling parameters of Boron diffusion process, the doping characteristics were analyzed by using secondary ion mass spectrometry. As a result, the influence of each variable in the doping process was analyzed and the feasibility of atmospheric plasma doping was confirmed.

Keywords

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