• Journal of Welding and Joining
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• v.13 no.3
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• pp.125-133
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• 1995

Rene80 superalloy was liquid phase diffusion bonded by using pure boron (B) as an insert material. As a basic study for the possibility of practical application of this bonding method, hardness and high temperature tensile strength of the bonded joint and metallurgical analysis were investigated. As experimental results, hardness of the bonded joint was homogenized after bonding and the tensile strength at 1144K was obtained to 90% of that of base metal. But there were some problems to be improved also, that means the joint was hardened after bonding due to increase of B content and elongation was much lower than that of base metal. Flat area and (Mo, Cr, W) boride, which should be harmful for bonding strength, were observed on the fractured surface of the tensile tested specimen.

• 전기의세계
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• v.27 no.6
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• pp.69-75
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• 1978

Diffusion processes of boron, phosphorus, and arsenic into silicon have been investigated using a new diffusion source called "spin-on source". Diffusion coefficients of these impurities have been calculated from the experimental results and are compared with the published values. Reasonable agreements have been found between the calculated and the published values. From this study, it is concluded that the spin-on source can be used as the diffusion source for integrated circuit fabricaticon.ricaticon.

• Current Photovoltaic Research
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• v.2 no.4
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• pp.147-151
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• 2014

A boron doping process using a boron tri-bromide ($BBr_3$) as a boron source was applied to form a $p^+$ emitter layer on an n-type mono-crystalline CZ substrate. Nitrogen ($N_2$) gas as an additive of the diffusion process was varied in order to study the variations in sheet resistance and the uniformity of doped layer. The flow rate of $N_2$ gas flow was changed in the range 3 slm~10 slm. The sheet resistance uniformity however was found to be variable with the variation of the $N_2$ flow rate. The optimal flow rate for $N_2$ gas was found to be 4 slm, resulting in a sheet resistance value of $50{\Omega}/sq$ and having a uniformity of less than 10%. The process temperature was also varied in order to study its influence on the sheet resistance and minority carrier lifetimes. A higher lifetime value of $1727.72{\mu}s$ was achieved for the emitter having $51.74{\Omega}/sq$ sheet resistances. The thickness of the boron rich layer (BRL) was found to increase with the increase in the process temperature and a decrease in the sheet resistance was observed with the increase in the process temperature. Furthermore, a passivated emitter solar cell (PESC) type solar cell structure comprised of a boron doped emitter and phosphorus doped back surface field (BSF) having Ni/Cu contacts yielding 15.32% efficiency is fabricated.

• Analytical Science and Technology
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• v.5 no.2
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• pp.199-202
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• 1992

Ti-silicide was formed by using metal-Ti target and composite target on the silicon substrate that $BF_2$ were introduced into. Implant energies of $BF_2$ were 50keV and 90keV. The behavior of boron was investigated by SIMS. The redistribution of boron occurred during the formation of Ti-silicide by metal-Ti target and the sample implanted at the energy of 50keV showed severe out-diffusion. In the case that Ti-silicide was formed by composite target, there was little redistribution of boron.

• The Transactions of the Korean Institute of Power Electronics
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• v.24 no.6
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• pp.411-418
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• 2019

Light-triggered thyristors (LTTs) are essential components in high-power applications, such as HVDC transmission and several pulsed-power applications. Generally, LTT fabrication includes a deep diffusion of aluminum as a p-type dopant to form a uniform p-base region, which needs careful concern for contamination and additional facilities in silicon semiconductor manufacturing factories. We fabricated 4-inch 5,000 V LTTs with boron implantation and diffusion process as a p-type dopant. The LTT contains a main cathode region, edge termination designed with a variation of lateral doping, breakover diode, integrated resistor, photosensitive area, and dV/dt protection region. The doping concentration of each region was adjusted with different doses of boron ion implantation. The fabricated LTTs showed good light triggering characteristics for a light pulse of 905 nm and a blocking voltage (V_DRM) of 6,500 V. They drove an average on-state current (I_TAVM) of 2,270 A, peak nonrepetitive surge current (I_TSM) of 61 kA, critical rate of rise of on-state current (di/dt) of 1,010 A/㎲, and limiting load integral (I²T) of 17 MA²s without damage to the device.

• Proceedings of the Korean Vacuum Society Conference
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• 1997.02a
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• pp.81-81
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• 1997

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.1
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• pp.46-56
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• 1994

The characteristics of flows, temperatures, concentrations of the boron are numerically studied when uniform axial magnetic fields are applied in the Czechralski crucible. The to governing factors to the flow regimes are buoyancy, thermocapillarity, centrifugal forces, magnetic forces, diffusion coefficient and segregation coefficient of the boron. Since the concentration of the boron is so low that buoyancy effects are negligible, it cannot affect the flow and temperature fields. From the fact that the flow fields are rotationally symmetric, two velocity components in the meridional plane and the circumferential velocity are calculated together with the temperature in the steady state. Based on the known velocity and temperature distributions the unsteady concentration distributions of the boron are calculated. As the strength of the magnetic is increased, the flow velocities are decreased. Circumferential velocities are large near the crucible side-wall and in the region below the rotating crystal. Steep temperatures gradient near the edge of the rotating crystal causes the Marangoni convection. It has been found out that the convection characteristics affects the unsteady transport phenomena of the boron.

• Journal of the Korean institute of surface engineering
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• v.32 no.1
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• pp.67-77
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• 1999

The Ni base superalloy Mar-M247 substrate was aluminized or aluminized after boronizing by the pack cementation under Ar atmosphere. The hot corrosion resistance and after-heat-treatment effect of aluminized specimens were studied by the cyclic hot corrosion test in $Na_2SO_4$-NaCl molten salt. XRD analysis showed that the $Ni_2Al_3$ phase was formed between the coated layer and substrate below 1273K but the NiAl phase above 1273K. The peak of the NiAl phase was developed after heat treatment. Corrosion test showed that corrosion resistance of the specimen with the NiAl phase was better than that with the $Ni_2Al_3$ phase. Corrosion resistance could be improved by heat treatment to form ductile NiAl phase, where cracks were not formed by thermal shock on coating layer. Moreover, it appeared that heat treatment played a role to improve corrosion resistance of Al diffusion coating above 1273K. The existence of boron in the Al diffusion coating layer obstructed outwared diffusion of Cr from the substrate, and it influenced on corrosion resistance of the coating layer by weakening adherence of the oxide scale.

• Korean Journal of Materials Research
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• v.25 no.11
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• pp.577-582
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• 2015

The present study is concerned with the influence of niobium(Nb) addition and austenitizing temperature on the hardenability of low-carbon boron steels. The steel specimens were austenitized at different temperatures and cooled with different cooling rates using dilatometry; their microstructures and hardness were analyzed to estimate the hardenability. The addition of Nb hardly affected the transformation start and finish temperatures at lower austenitizing temperatures, whereas it significantly decreased the transformation finish temperature at higher austenitizing temperatures. This could be explained by the non-equilibrium segregation mechanism of boron atoms. When the Nb-added boron steel specimens were austenitized at higher temperatures, it is possible that Nb and carbon atoms present in the austenite phase retarded the diffusion of carbon towards the austenite grain boundaries during cooling due to the formation of NbC precipitate and Nb-C clusters, thus preventing the precipitation of $M_{23}(C,B)_6$ along the austenite grain boundaries and thereby improving the hardenability of the boron steels. As a result, because it considerably decreases the transformation finish temperature and prohibits the nucleation of proeutectoid ferrite even at the slow cooling rate of $3^{\circ}C/s$, irrespective of the austenitizing temperature, the addition of 0.05 wt.% Nb had nearly the same hardenability-enhancing effect as did the addition of 0.2 wt.% Mo.

• Carbon letters
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• v.27
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• pp.1-11
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• 2018

A simple, but effective means of tailoring the physical and chemical properties of carbon materials should be secured. In this sense, chemical doping by incorporating boron or nitrogen into carbon materials has been examined as a powerful tool which provides distinctive advantages over exohedral doping. In this paper, we review recent results pertaining methods by which to introduce boron atoms into the $sp^2$ carbon lattice by means of high-temperature thermal diffusion, the properties induced by boron doping, and promising applications of this type of doping. We envisage that intrinsic boron doping will accelerate both scientific and industrial developments in the area of carbon science and technology in the future.