• Journal of Welding and Joining
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• 제23권6호
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• pp.77-86
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• 2005

Low temperature bonding of the silicon and glass using the Spin-on Glass (SOG) has been conducted experimentally to figure out the effects of the SOG solution composition and process variables on bond strength using the Design of Experiment method. In order to achieve the high quality bond interface without rack, sufficient reaction time of the optimal SOG solution composition is needed along with proper pressure and annealing temperature. The shear strength under the optimal SOG solution composition and process condition was higher than that of conventional anodic bonding and similar to that of wafer direct bonding.

• 한국전기전자재료학회논문지
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• 제15권6호
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• pp.479-485
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• 2002

We have investigated the effects of various wafers cleaning on glass/Si bonding using 4 inch Pyrex glass wafers and 4 inch silicon wafers. The various wafer cleaning methods were examined; SPM(sulfuric-peroxide mixture, $H_2SO_4:H_2O_2$ = 4 : 1, $120^{\circ}C$), RCA(company name, $NH_4OH:H_2O_2:H_2O$ = 1 : 1 : 5, $80^{\circ}C$), and combinations of those. The best room temperature bonding result was achieved when wafers were cleaned by SPM followed by RCA cleaning. The minimum increase in surface roughness measured by AFM(atomic force microscope) confirmed such results. During successive heat treatments, the bonding strength was improved with increased annealing temperatures up to $400^{\circ}C$, but debonding was observed at $450^{\circ}C$. The difference in thermal expansion coefficients between glass and Si wafer led debonding. When annealed at fixed temperatures(300 and $400^{\circ}C$), bonding strength was enhanced until 28 hours, but then decreased for further anneal. To find the cause of decrease in bonding strength in excessively long annealing time, the ion distribution at Si surface was investigated using SIMS(secondary ion mass spectrometry). tons such as sodium, which had been existed only in glass before annealing, were found at Si surface for long annealed samples. Decrease in bonding strength can be caused by the diffused sodium ions to pass the glass/si interface. Therefore, maximum bonding strength can be achieved when the cleaning procedure and the ion concentrations at interface are optimized in glass/Si wafer direct bonding.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권4호
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• pp.275-280
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• 1999

The glass-to-glass electrostatic bonding process in vacuum environment was developed and the tubeless-packaged FED was fabricated based on the bonding process. The fabricated tubeless-packaged FED showed stable field emission characteristics and potential applicability to the FED tubeless packaging and vacuum in-line sealing.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권1호
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• pp.37-40
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• 2001

New package process for PDP was proposed based on the glass-to-glass vacuum-electrostatic bonding process and tubeless packaging concept derived from the previous study. Hermeticity and operating performance of PDP test panel through the seal-off process application and the possibility for practical use might be high if the process simplicity and productivity-related effort was sequentially carried out.

• 한국재료학회지
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• 제14권11호
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• pp.780-785
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• 2004

The degradation mechanism of soft magnetic properties of $Fe-Hf-N/Cr/SiO_2$ thin films reacted with a bonding glass was investigated. When $Fe-Hf-N/Cr/SiO_2$ films were annealed under $600^{\circ}C$ without the bonding glass, the compositions and the soft magnetic properties of Fe-Hf-N layers were not changed. However, after reaction with the bonding glass at $550^{\circ}C$, the soft magnetic properties of the film were degraded. At $600^{\circ}C$, the saturation magnetization of the reacted film decreased to 13.5 kG, and its coercivity increased to 4 Oe, and its effective permeability decreased to 700. It was founded that O diffused from the glass into the Fe-Hf-N layers during the reaction and generated $HfO_2$ phases. It was considered that the soft magnetic properties of the $Fe-Hf-N/Cr/SiO_2$ films reacted with the bonding glass were primarily degraded by the formation of the Fe-Hf-O-N layer of which the Fe content was below 60 $at\%$, and secondarily degraded by the Fe-Hf-O-N layer above 70 $at\%$.

• 센서학회지
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• 제29권5호
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• pp.354-359
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• 2020

The high vacuum hermetic sealing technique ensures excellent performance of MEMS resonators. For the high vacuum hermetic sealing, the customization of anodic bonding equipment was conducted for the glass/Si/glass triple-stack anodic bonding process. Figure 1 presents the schematic of the MEMS resonator with triple-stack high-vacuum anodic bonding. The anodic bonding process for vacuum sealing was performed with the chamber pressure lower than 5 × 10^-6 mbar, the piston pressure of 5 kN, and the applied voltage was 1 kV. The process temperature during anodic bonding was 400 ℃. To maintain the vacuum condition of the glass cavity, a getter material, such as a titanium thin film, was deposited. The getter materials was active at the 400 ℃ during the anodic bonding process. To read out the electrical signals from the Si resonator, a vertical feed-through was applied by using through glass via (TGV) which is formed by sandblasting technique of cap glass wafer. The aluminum electrodes was conformally deposited on the via-hole structure of cap glass. The TGV process provides reliable electrical interconnection between Si resonator and aluminum electrodes on the cap glass without leakage or electrical disconnection through the TGV. The fabricated MEMS resonator with proposed vacuum packaging using three-layer anodic bonding process has resonance frequency and quality factor of about 16 kHz and more than 40,000, respectively.

• 한국레이저가공학회지
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• 제11권3호
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• pp.1-4
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• 2008

A selective laser micro bonding process using liquid glass (methylsilsesquioxane) was developed and the results are analysed. The liquid glass can be solidified with Nd:YAG laser irradiation and it can be applied for joining two glass substrates. A bonding thickness of a few micrometers can be achieved. The appropriate laser power density (or this process is around 40-60 $kW/cm^2$ and its bonding force is 1000-1200 $gf/mm^2$. This process can be applied for bonding micro devices such as micro bio-sensors or display products. Its advantages and limitations are presented and discussed.

• 마이크로전자및패키징학회지
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• 제7권1호
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• pp.7-12
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• 2000

유리 프릿과 유리 튜브를 사용하지 않고 FED, VFD와 PDP를 봉입할 수 있는 기반 기술로서, 진공 내에서 두 장의 sodalite유리 기판들을 정전 열 접합하는 공정을 연구하였으며, 대기 중에서 정전 열 접합한 기판 쌍들과 비교하여 접합 특성을 비교.분석하였다. 진공 분위기 내에서 비정질 실리콘 interlayer를 이용하여 접합된 유리 기판 쌍의 경우, 대기압의 경우와 비교할 때 동일한 접합 온도와 전압에서 접합 강도가 상대적으로 낮은 것으로 측정되었으며, 산소 분위기의 경우 접합 강도가 증가하였음을 확인하였다. XPS와 SIMS를 통한 비정질 실리콘 표면 및 유리기판 표면의 조성 변화 분석으로부터, 진공내에서 산소가 부족함으로써 정전 열 접합 과정에서 부가적으로 수반되는 실리콘 산화막이 불완전하게 형성된 것으로 해석 할 수 있다.

• 반도체디스플레이기술학회지
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• 제10권2호
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• pp.103-108
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• 2011

Ultrasonic welding is widely used in bonding of the same kind or dissimilar materials. The important variable of ultrasonic bonding is the bonding pressure, bonding time and applied amplitude energy. These variables have to be optimized in order to obtain the optimum bonding results. In this research, the important factor to optimal bonding between metal and glass were experimentally investigated by applying design of experiment.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.1209-1210
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• 2006

A novel sintering process is proposed for bonding of $BaTiO_3$ and $Al_2O_3$ layers. Common commercial glass was used and infilterated among filler particles. As the kind of commercial glass, the phenomenon of the infilteration is different. Although Sud-1140 glass forms a glass/filler composite, it is not completely infilterated into the filler particles at $900^{\circ}C$. However as the increase of sintering temperature the infilteration of glass was improved. In this study, GA-1 and GA-12 glasses were infilterated the more than Sud-1140 glass. However, they are reacted by $BaTiO_3$ layer. The results of the experiment show that constrained sintering and the co-firing of the different materials were possible for glass infilteration using Sud-1140 glass at $1000^{\circ}C$.