• Journal of Welding and Joining
• /
• 제20권5호
• /
• pp.87-92
• /
• 2002

Weldability of Friction Stir Welded(FSW) AZ31B-H24 Mg alloy sheet with 4m thick was evaluated by changing welding speed. The sound welding conditions mainly depended on the suffiicient welding heat input during the process. The insufficient heat input resulted in the void like defect in the weld zone. Higher welding speed caused a larger inner void or lack of bonding. The defects were distributed at the stir zone or the transition region between stir zone and thermo-mechanical affected zone (UE). The size of defects slightly increased with increasing welding speed. These defects had a great effect on the joint strength of weld zone. The weld zone was composed of stir zone, TMAZ and heat affected zone. The stir zone was cosisted of fine recrystallized structure with $5-8\mu\textrm{m}$ in the mean grain size. The hardness of weld zone was near the 60HV, which was slightly lower than that of base metal. The maximum joint strength was about 219MPa that was 75% of that of base metal and the yield strength was also lower than that of base metal partly due to the existance of defects.

• 한국진공학회지
• /
• 제14권2호
• /
• pp.91-96
• /
• 2005

양성자 주입과 웨이퍼접합기술을 접목한 ion-cut기술로서 SOI 웨이퍼를 제조하는 기술을 개발하였다. SRIM 전산모사에 의하면 일반 SOI 웨이퍼 (200nm SOI, 400nm BOX) 제조에는 65keV의 양성자주입이 요구된다. 웨이퍼분리를 위한 최적 공정조건을 얻기 위해 조사선량과 열처리조건(온도 및 시간)에 따른 blistering 및 flaking 등의 표면변화를 조사하였다. 실험결과 유효선량범위는 $6\~9times10^{16}H^+/cm^2$이며, 최적 아닐링조건은 $550^{\circ}C$에서 30분 정도로 나타났다. RCA 세정법으로서 친수성표면을 형성하여 웨이퍼 직접접합을 수행하였으며, IR 조사에 의해 무결함접합을 확인하였다 웨이퍼 분리는 예비실험에서 정해진 최적조건에서 이루어졌으며, SOI층의 안정화를 위해 고온열처리($1,100^{\circ}C,\;60$분)를 시행하였다. TEM 측정상 SOI 구조결함은 발견되지 않았으며, BOX(buried oxide)층 상부계면상의 포획전하밀도는 열산화막 계면의 낮은 밀도를 유지함을 확인하였다.

• 대한기계학회논문집A
• /
• 제33권9호
• /
• pp.969-975
• /
• 2009

In this paper, bonded wafer analysis system is proposed using laser beam transmission; while the transmission model is derived by simulation. Since the failure of bonded wafer stems in void existence, transmittance deviations caused by the thickness of the void are analyzed and variations of the intensity through the void or defect easily have been recognized then the testing power has been increased. In addition, large screen display on laser study has been done which resulted in acquiring a feasible technique for analysis of the whole bonding surface. In this regard, three approaches are demonstrated in which Halogen lamp, IR lamp and laser have been tested and subsequently by results comparison the optimized technique using laser has been derived.

• Structural Engineering and Mechanics
• /
• 제53권5호
• /
• pp.1017-1030
• /
• 2015

In this study, the finite element method was used to analyze the distribution of the adhesive shear stresses in the single-lap bonded joint of two plates 2024-T3 aluminum with and without defects. The effects of the adhesive properties (shear modulus, the thickness and the length of the adhesive were highlighted. The results prove that the shear stresses are located on the free edges of the adhesively bonding region, and reach maximum values near the defect, because the concentration of high stress occurs near this area.

• 한국건축시공학회:학술대회논문집
• /
• 한국건축시공학회 2018년도 춘계 학술논문 발표대회
• /
• pp.283-284
• /
• 2018

The rear side surface of tiles act have protrusions that helps secure the adhesion between the tile and the mortar for tile setting. Conventional height of the rear side usually ranges between 1 to 1.5 mm, and the molding method is classified in between press type and compression type during the manufacturing process, with most tiles being produced by the former method. In sites where adhesion failures were observed, tiles were taken to examine the cause of defect. It was determined that height was irregular at the rear side surface. Based on these findings, an experiment was conducted to determine the correlation between the rear surface and the bonding strength of tiles.

• The Korean Journal of Ceramics
• /
• 제3권3호
• /
• pp.163-168
• /
• 1997

Most of heteroepitaxial $\beta$-SiC thin films have been successfully grown on Si(100) adapting a carburizing process, by which a few atomic layers of substrate surface is chemically converted to very thin SiC layer using hydrocarbon gas sources. Using an organo-silicon precursor, bis-trimethylsilymethane (BTMSM, [$C_7H_{20}Si_2$]), heteropitaxial $\beta$-SiC thin films were successfully grown directy on Si substrate without a carburized buffer layer. The defect density of the $\beta$-SiC thin films deposited without a carburized layer was as low as that of $\beta$-SiC films deposited on carburized buffer layer. In addition, void density was also reduced by the formation of self-buffer layer using BTMSM instead of carburized buffer layer. It seems to be mainly due to the characteristic bonding structure of BTMSM, in which Si-C was bonded alternately and tetrahedrally (SiC$_4$).

• 한국세라믹학회지
• /
• 제25권1호
• /
• pp.35-41
• /
• 1988

In the system of Li2O-MgO-Al2O3-Cr2O3, the crystalline solid solution of LiCrO2 along the pseudo-binary join between rocksalt structure(LiCrO2) and spinel structure(MgCr2O4 or MgAl2O4) have been investigated by x-ray diffraction techniques. In this study, order-disorder phase transition of LiCrO2 was observed and the unit cell of the disordered LiCrO2 structure has been established. It has been found that LiCrO2 makes a solid solution over a wide range with MgAl2O4, while not with MgCr2O4. This difference was explained as being due to the ability of oxygen lattice distortion which depended on the relative sizes and chemical bonding characteristics of the substituted ions.

• Macromolecular Research
• /
• 제15권2호
• /
• pp.134-141
• /
• 2007

The direct chromatographic separation of enantiomers by chiral stationary phases (CSPs) has been extensively developed over the past two decades, and has now become the most popular method for the analytical and preparative separations of enantiomers. Polysaccharide derivatives coated onto silica gel, as CSPs, playa significantly important role in the enantioseparations of a wide range of chiral compounds using high-performance liquid chromatography (HPLC). Unfortunately, the strict solvent limitation of the mobile phases is the main defect in the method developments of these types of coated CSPs. Therefore, the immobilization of polysaccharide derivatives onto silica gel, via chemical bonding, to obtain a new generation of CSPs compatible with the universal solvents used in HPLC is increasingly important. In this article, our recent studies on the immobilization of polysaccharide derivatives onto the silica gel, as CSPs, through radical copolymerization with various vinyl monomers are reported. Polysaccharide derivatives, with low vinyl content, can be efficiently fixed onto silica gel with high chiral recognition.

• 한국군사과학기술학회지
• /
• 제10권3호
• /
• pp.173-180
• /
• 2007

In this paper, we have proposed a simple finite element model for separation mode analysis on the roadwheel and track assembly of main battle tank and established a contact stress-based mechanism which could explain the initiation and growth of separation defect occurred during the test of padreplacable track. It was proved that the longitudinal contact shear stress component on the pin hole region of the track shoe body which is parallel to the driving direction is consistent with the crack initiation at the bonding surface between track shoe and wheel-side rubber. The longitudinal shear stress increased locally near the separated region after the separation initiated. So we could assume that the local stress concentration accelerates the separation growth according to the shear mode.

• 한국진공학회지
• /
• 제7권2호
• /
• pp.150-154
• /
• 1998

실리콘산화막에 실리콘이온주입을 $5\times1016/\textrm{cm}^2, 1\times10^{17}/\textrm{cm}^2, 3\times10^{17}/\textrm{cm}^2$으로 하여 열처리온도와 열처리시간을 변화시키면서 광루미니센스, XRD, TEM을 관찰하였다. 이온주 입량이 적고 열처리온도가 낮을경우에 가시광 광루미니센스를 관찰할 수 있었다. 광루미니 센스의 peak는 7420$\AA$과 8360$\AA$위치에 있었으며, 열처리시간이 길어짐에 따라 intensity는 각각 증가하였다. 이온주입량이 많고 열처리온도가 높을경우에는 광루미니센스가 관찰되지 않았다. 이온주입량이 적고 열처리 온도가 높을경우에는 열처리시간이 짧으면 가시광 광루 미니센스가 있으나 열처리시간이 1시간 이상으로 길어지면 광루미니센스가 사라졌다. XRD 와 TEM결과로부터 실리콘 cluster는 nonradiative defect와 관련있으며, 실리콘이온주입된 실리콘산화막에서 관찰되는 광루미니센스의 origin은 nanocrystal이 아니라 defect임을 알 수 있었다. 이온주입되는 실리콘이온의 량, 열처리온도와 시간의 변화는 광루미니센스를 변 화시키는데 이 현상들을 Si-O-O결합인 O위주의 결함과 Si-Si-O결합인 Si위주의 결함과 연 관지어 설명할 수 있었다.