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http://dx.doi.org/10.3795/KSME-A.2009.33.9.969

Development of Bonded Wafer Analysis System  

Jang, Dong-Young (서울산업대학교 산업정보시스템공학과)
Ban, Chang-Woo (서울산업대학교 에너지환경대학원 NIT공학과)
Lim, Young-Hwan (서울테크노파크)
Hong, Suk-Ki (서울산업대학교 IT정책전문대학원 산업정보시스템공학과)
Publication Information
Transactions of the Korean Society of Mechanical Engineers A / v.33, no.9, 2009 , pp. 969-975 More about this Journal
Abstract
In this paper, bonded wafer analysis system is proposed using laser beam transmission; while the transmission model is derived by simulation. Since the failure of bonded wafer stems in void existence, transmittance deviations caused by the thickness of the void are analyzed and variations of the intensity through the void or defect easily have been recognized then the testing power has been increased. In addition, large screen display on laser study has been done which resulted in acquiring a feasible technique for analysis of the whole bonding surface. In this regard, three approaches are demonstrated in which Halogen lamp, IR lamp and laser have been tested and subsequently by results comparison the optimized technique using laser has been derived.
Keywords
Bonded Soi Wafer; Ellipsometry; Galvano Mirror; Laser; Wafer Analysis;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
Times Cited By SCOPUS : 0
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