• Title/Summary/Keyword: bonded films

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XPS Analysis of PVDF Film Treated by Corona Discharge in Ethyl Methacrylate Vapor Atmosphere (에틸메타크릴레이트 증기 분위기에서 코로나 방전 처리한 PVDF 필름의 XPS 분석)

  • Moon, HuiKwon;Seomoon, Kyu
    • Applied Chemistry for Engineering
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    • v.27 no.6
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    • pp.627-632
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    • 2016
  • Ethyl methacrylate (EMA) monomer coupling onto the polyvinylidene fluoride (PVDF) film surface was attempted to enhance the interfacial adhesive force between PVDF-polyvinyl chloride (PVC) bilayer films via dielectric barrier corona discharge. The interfacial forces were quite enhanced when PVDF films were treated by corona discharge in an EMA 1% atmosphere. The contact angle of PVDF films decreased due to corona treatment. X-ray photoelectron spectroscopy (XPS) analysis showed that the carbon and oxygen content of the PVDF film surface increased with corona discharge while the fluoride content decreased. The curve fitting of XPS $C_{1s}$ peaks revealed that the non-polar C-C bonded carbon and oxygen-bonded carbon increased gradually with corona treatment, while the fluorine-bonded carbon decreased.

Study on the Applicability of the Air Cushion Material for Impact Relief through Thermal Bonding of High Strength Fabrics (고강력 직물의 열융착 라미네이팅을 통한 충격 완화용 에어쿠션 소재로의 적용 가능성 검토 연구)

  • Kim, Ji Yeon;Kim, Hun Min;Min, Mun Hong
    • Textile Coloration and Finishing
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    • v.32 no.3
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    • pp.176-183
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    • 2020
  • In order to study wearable air cushion materials capable of responding to massive impact in high-altitude fall situation, high tenacity woven fabrics were bonded by heat only depending on various type of thermoplastic films and then mechanical properties were measured. Tensile strength, elongation, and 100% modulus measurement results for 4 types of films show that TPU-2 has higher impact resistance and easier expansion than PET-1. After thermal bonding, the combination with the highest tensile strength was a material with a TPU-2 film for nylon and a PET-2 film for PET, so there was a difference by type of fabric. The tear strength of the bonded materials were increased compared to the fabric alone, which shows that durability against damage such as tearing can be obtained through film adhesion. All of the peel strengths exceeded the values required by automobile airbags by about 5 times, and the TPU-2 bonded fabric showed the highest value. The air permeability was 0 L/dm2 /min. For both the film and the bonded material, which means tightness between the fabric and the film through thermal bonding. It is expected to be applied as a wearable air cushion material by achieving a level of mechanical properties similar to or superior to that of automobile airbags through the method of bonding film and fabric by thermal bonding.

Condition and New Testing Method of Interfacial Oxide Films in Directly Bonded Silicon Wafer Pairs (직접 접합된 실리콘 기판쌍에 있어서 계면 산화막의 상태와 이의 새로운 평가 방법)

  • ;;;;D.B. Murfett;M.R.Haskard
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.3
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    • pp.134-142
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    • 1995
  • We discovered that each distinct shape of the roof-shaped peaks of (111) facets, which are generated on (110) cross-section of the directly bonded (100) silicon wafer pairs after KOH etching, can be mapped to one of three conditions of the interfacial oxide existing at the bonding interface as follows. That is, thick solid line can be mapped to stabilization, thin solid line to disintegration, and thin broken line to spheroidization. also we confirmed that most of the interfacial oxides of a well-aligned wafer pairs were disintegrated and spheroidized through high-temperature annealing process above 900$^{\circ}$C while the oxide was stabilized persistently when two wafers are bonded rotationally around their common axis perpendicular to the wafer planes.

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Epitaxial Growth of $\beta$-SiC Thin Films on Si(100) Substrate without a Carburized Buffer Layer

  • Wook Bahng;Kim, Hyeong-Joon
    • The Korean Journal of Ceramics
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    • v.3 no.3
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    • pp.163-168
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    • 1997
  • Most of heteroepitaxial $\beta$-SiC thin films have been successfully grown on Si(100) adapting a carburizing process, by which a few atomic layers of substrate surface is chemically converted to very thin SiC layer using hydrocarbon gas sources. Using an organo-silicon precursor, bis-trimethylsilymethane (BTMSM, [$C_7H_{20}Si_2$]), heteropitaxial $\beta$-SiC thin films were successfully grown directy on Si substrate without a carburized buffer layer. The defect density of the $\beta$-SiC thin films deposited without a carburized layer was as low as that of $\beta$-SiC films deposited on carburized buffer layer. In addition, void density was also reduced by the formation of self-buffer layer using BTMSM instead of carburized buffer layer. It seems to be mainly due to the characteristic bonding structure of BTMSM, in which Si-C was bonded alternately and tetrahedrally (SiC$_4$).

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Ge thin layer transfer on Si substrate for the photovoltaic applications (Si 기판에서의 광소자 응용을 위한 Ge 박막의 Transfer 기술개발)

  • 안창근;조원주;임기주;오지훈;양종헌;백인복;이성재
    • Proceedings of the IEEK Conference
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    • 2003.07b
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    • pp.743-746
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    • 2003
  • We have successfully used hydrophobic direct-wafer bonding, along with H-induced layer splitting of Ge, to transfer 700nm think, single-crystal Ge films to Si substrates. Optical and electrical properties have been also observed on these samples. Triple-junction solar cell structures gown on these Ge/Si heterostructure templates show comparable photoluminescence intensity and minority carrier lifetime to a control structure grown on bulk Ge. When heavily doped p$^{+}$Ge/p$^{+}$Si wafer bonded heterostructures were bonded, ohmic interfacial properties with less than 0.3Ω$\textrm{cm}^2$ specific resistance were observed indicating low loss thermal emission and tunneling processes over and through the potential barrier. Current-voltage (I-V) characteristics in p$^{+}$Ge/pSi structures show rectifying properties for room temperature bonded structures. After annealing at 40$0^{\circ}C$, the potential barrier was reduced and the barrier height no longer blocks current flow under bias. From these observations, interfacial atomic bonding structures of hydrophobically wafer bonded Ge/Si heterostructures are suggested.ested.

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Phase identification of $C_3N_4$ in CN films prepared by rf plasma chemical vapor deposition and dc magnetron sputtering

  • Fu, Dejun;Wu, Dawei;Zhang, Zhihong;Meng, Xianquan;He, Mengbing;Guo, Huaixi;Peng, Yougui;Fan, Xiangjun
    • Journal of the Korean Vacuum Society
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    • v.7 no.s1
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    • pp.140-148
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    • 1998
  • We prepared $C_3N_4$ films by rf plasma enhanced chemical vapor deposition(PCVD) and alternating $C_3N_4$/TiN composite films by dc magnetron sputtering. X-ray diffraction (XRD) and transmission electron diffraction (TED) revealed that the structure of the films is amorphous or polycrystalline, depending on deposition conditions and heat treatment. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy confirmed the presence of $sp_3\; and sp _2$ hybridized C atoms bonded with N atoms in the tetrahedral and hexagonal configurations, respectively. Graphite-free $C_3N_4$ films were obtained by PCVD under optimal conditions. To prepare well crystallized $C_3N_4$ films by magnetron sputtering, we introduced negatively biased gratings in the sputtering system. CN films deposited at grating voltages (Vg) lower than 400V are amorphous. Crystallites of cubic and $\beta$-$C_3N_4$ were formed at increased voltages.

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Thermocompression Anisothropic Conductive Films(ACFs) bonding for Flat Panel Displays(FPDs) Application (평판디스플레이를 위한 열압착법을 이용한 이방성 도전성 필름 접합)

  • Pak, Jin-Suk;Jo, Il-Jea;Shin, Young-Eui
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.3
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    • pp.199-204
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    • 2009
  • The effect of temperature on ACF thermocompression bonding for FPD assembly was investigated, It was found that Au bumps on driver IC's were not bonded to the glass substrate when the bonding temperature was below $140^{\circ}C$ so bonds were made at temperatures of $163^{\circ}C$, $178^{\circ}C$ and $199^{\circ}C$ for further testing. The bonding time and pressure were constant to 3 sec and 3.038 MPa. To test bond reliability, FPD assemblies were subjected to thermal shock storage tests ($-30^{\circ}C$, $1\;Hr\;{\leftrightarrow}80^{\circ}C$, 1 Hr, 10 Cycles) and func! tionality was verified by driver testing. It was found all of FPDs were functional after the thermal cycling. Additionally, Au bumps were bonded using ACF's with higher conductive particle densities at bonding temperatures above $163^{\circ}C$. From the experimental results, when the bonding temperature was increased from $163^{\circ}C$ to $199^{\circ}C$, the curing time could be reduced and more conductive particles were retained at the bonding interface between the Au bump and glass substrate.

Anodic bonding characteristics of MCA to Si-wafer using pyrex #7740 glass intermediatelayer for MEMS applications (파일렉스 #7740 글라스 매개층을 이용한 MEMS용 MCA와 Si기판의 양극접합 특성)

  • Ahn, Jung-Hac;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.374-375
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    • 2006
  • This paper describes anodic bonding characteristics of MCA to Si-wafer using evaporated Pyrex #7740 glass thin-films for MEMS applications. Pyrex #7740 glass thin-films with the same properties were deposited on MCA under optimum RF sputter conditions (Ar 100 %, input power $1\;W/cm^2$). After annealing at $450^{\circ}C$ for 1 hr, the anodic bonding of MCA to Si-wafer was successfully performed at 600 V, $400^{\circ}C$ in $110^{-6}$ Torr vacuum condition. Then, the MCA/Si bonded interface and fabricated Si diaphragm deflection characteristics were analyzed through the actuation and simulation test. It is possible to control with accurate deflection of Si diaphragm according to its geometries and its maximum non-linearity being 0.05-0.08 %FS. Moreover, any damages or separation of MCNSi bonded interfaces did not occur during actuation test. Therefore, it is expected that anodic bonding technology of MCNSi-wafers could be usefully applied for the fabrication process of high-performance piezoelectric MEMS devices.

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Antibacterial Characteristics of PVA/PAA Hydrogel Film using Cefotaxime (Cefotaxime을 이용한 PVA/PAA 하이드로 겔 필름의 항균 특성)

  • Yeom, SeokJae;Jung, Sundo;Oh, Eunha
    • Journal of Environmental Health Sciences
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    • v.47 no.1
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    • pp.55-63
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    • 2021
  • Objectives: Cefotaxime is an antibiotic used to treat several bacterial infections. Specifically, it is used to treat pelvic inflammatory disease, meningitis, pneumonia, urinary tract infections, and sepsis. It is given by injection into either a vein or muscle. Antibacterial polymers prepared by chemical bonding and simple blending of antibacterials into polymers has attracted much interest because of their long-lasting antibacterial activity. This study attempted to review the possibility of hydrogel films as functional antibacterial materials by antimicrobial activity. Methods: In this study, CTX-PAA was synthesized by the chemical reaction of polyacrylic acid with cefotaxime by N,N'-Dicyclohexylcarbodiimide (DCC) method. Synthetic antibacterial hydrogel films were then prepared with PVA and CTX-PAA for functional application. Results: The increase in the cefotaxime content of the hydrogel films showed a similar decrease in tensile strength and elongation. The values of films impregnated with chemically bonded cefotaxime showed no significant difference. Antibacterial susceptibility was determined against Streptococcus pneumoniae and Escherichia coli using a standardized disc test. Conclusion: The synthetic antibacterial hydrogel films exhibited broad susceptibility against Streptococcus pneumoniae and Escherichia coli. Notably, the antibacterial effect of antibacterial hydrogel films against Grampositive (Streptococcus pneumoniae) was superior to that against Gram-negative (Escherichia coli).