• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.3
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• pp.188-192
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• 2000

In this study PZT etching was performed using planar inductively coupled Ar/Cl$_2$/BCI$_3$ plasma. The etch rate of PZT film was 2450 $\AA$/min at Ar(20)/BCl$_3$(80) gas mixing ratio and substrate temperature of 8$0^{\circ}C$. X-ray photoelectron spectroscopy(XPS) analysis for films composition of etched PZT surface was utilized. The chemical bond of PbO is broken by ion bombardment and Cl radical, and the peak of metal Pb in a Pb 4f narrow scan begins to appear upon etching. As increasing additive BCl$_3$content the relative content of oxygen decreases rapidly in contrast with etch rate of PZT thin film. So we though that the etch rate of PZT thin film increased because abundant B and BCl radicals made volatile oxy-compound such as B$_{x}$/O$_{y}$ and/or BClO$_{x}$ bond. We achieved etch profile of about 80$^{\circ}$ at Ar(20)/BCl$_3$(80) gas mixing condition and substrate temperature of 8$0^{\circ}C$TEX>X>.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.5
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• pp.388-392
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• 2002

In this work, the etching of $CeO_2$ thin films has been performed in an inductively coupled $Ar/CF_4/Cl_2$ plasma. The highest etch rate of the $CeO_2$ thin film ws 250 ${\AA}/min$ and the selectivity of CeO$_2$to SBT was 0.4 at a 10% additive $Cl_2$ into Ar/($Ar+CF_4$)gas mixing ratio of 0.8. From result of X-ray photoelectron spectroscopy (XPS) analysis, there are Ce-Cl and Ce-F bonding by chemical reaction between Cl, F and Ce. During the etching of $CeO_2$ thin films in $Ar/CF_4/Cl_2$ plama, Ce-Cl and Ce-F bond is formed, and these prodcuts can be removed by the physical bombardment of Ar ions. The 10% additive $Cl_2$ into the Ar/($Ar+CF_4$)gas mixing ratio of 0.8 could enhance the reaction between Cl, F and Ce.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.21-24
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• 2000

Ferroelectric YMnO$_3$ thin films are excellent dielectric materials for high integrated ferroelectric random access memory (FRAM) with metal-ferroelectric-silicon field effect transistor (MFSFET) structure. In this study, YMnO$_3$ thin films were etched with C1$_2$/Ar gas chemistries in inductively coupled plasma (ICP). The maximum etch rate of YMnO$_3$ thin films is 285 $\AA$/min under C1$_2$/Ar of 10/0, 600 W/-200 V and 15 mTorr. The selectivities of YMnO$_3$ over CeO$_2$ and $Y_2$O$_3$ are 2.85, 1.72, respectively. The results of x-ray photoelectron spectroscopy (XPS) reflect that Y is removed dominantly by chemical reaction between Y and Cl, while Mn is removed more effective by Ar ion bombardment than chemical reaction. The results of secondary ion mass spectrometer (SIMS) were equal to these of XPS. The etch profile of the etched YMnO$_3$ film is approximately 65$^{\circ}$and free of residues at the sidewall.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.25-28
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• 2000

In this study, $Y_2$O$_3$ thin films were etched with inductively coupled plasma (ICP). The etch rate of $Y_2$O$_3$, and the selectivity of $Y_2$O$_3$ to YMnO$_3$ were investigated by varying Cl$_2$/(Cl$_2$+Ar) gas mixing ratio. The maximum etch rate of $Y_2$O$_3$, and the selectivity Of $Y_2$O$_3$ to YMnO$_3$ were 302/min, and 2.4 at Cl$_2$/(Cl$_2$+Ar) gas mixing ratio of 0.2 repectively. In x-ray photoelectron spectroscopy (XPS) analysis, $Y_2$O$_3$ thin film was dominantly etched by Ar ion bombardment, and was assisted by chemical reaction of Cl radical. These results were confirmed by secondary ion mass spectroscopy(SIMS) analysis. YCI, and YCl$_3$ existed at 126.03 a.m.u, and 192.3 a.m.u, respectively

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.564-568
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• 2003

The etching of Au thin films have been performed in an inductively coupled CF$_4$/Cl$_2$/Ar plasma. The etch rates were measured as CF$_4$ contents added from 0 to 30 % to Cl$_2$/Ar plasma, of which gas mixing ratio was fixed at 20%. Other parameters were fixed at an rf power of 700 W, a dc bias voltage of 150 V, a chamber pressure of 15 mTorr, and a substrate temperature of 3$0^{\circ}C$. The highest etch rate of the Au thin film was 3700 $\AA$m/min at a 10% additive CF$_4$ into Cl$_2$/Ar plasma. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. XPS analysis indicated that Au reacted with Cl and formed Au-Cl, which is hard to remove on the surface because of its high melting point. The etching products could be sputtered by Ar ion bombardment.

• Transactions on Electrical and Electronic Materials
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• v.15 no.1
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• pp.49-54
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• 2014

In this study, we carried out an investigation of the etch characteristics of silicon (Si) film, and the selectivity of Si to $SiO_2$ in $SF_6/O_2$ plasma. The etch rate of the Si film was decreased on adding $O_2$ gas, and the selectivity of Si to $SiO_2$ was increased, on adding $O_2$ gas to the $SF_6$ plasma. The optical condition of the Si film with this work was 1,350 nm/min, at a gas mixing ratio of $SF_6/O_2$ (=130:30 sccm). At the same time, the etch rate was measured as functions of the various etching parameters. The X-ray photoelectron spectroscopy analysis showed the efficient destruction of oxide bonds by ion bombardment, as well as the accumulation of high volatile reaction products on the etched surface. Field emission auger electron spectroscopy analysis was used to examine the efficiency of the ion-stimulated desorption of the reaction products.

• Current Photovoltaic Research
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• v.3 no.4
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• pp.112-115
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• 2015

In this study, the surface of ITO films was modified using $N_2-O_2$ molecular plasma, and the effects of oxygen concentration in the plasma on the ITO surface properties were investigated. Upon plasma treatment of ITO films, the surface roughness of ITO films seldom changed up to the oxygen concentration in the range of 0% to 40%, while the roughness of the films slightly changed at or above the oxygen concentration of 60%. The contact angle of water droplet on ITO films dramatically changed with varying oxygen concentration in the plasma, and the minimum value was found to be at the oxygen concentration of 20%. The plasma resistance at this condition exhibited a maximum value, and the change of resistance showed an inverse relationship compared to that of contact angle. From these results, it was conjectured that the chemical reactions in the sheath of the molecular plasma dominated more than the physical actions due to energetic ion bombardment, and also the plasma resistance could be used as an indirect indicator to qualitatively diagnosis the state of plasma during the plasma treatment.

• Journal of the Korean institute of surface engineering
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• v.45 no.2
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• pp.75-80
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• 2012

A sputter-sublimation source was tested for high rate deposition of protective coating of PEMFC(polymer electrolyte membrane fuel cell) with high electrical conductivity and anti-corrosion capability by DC biasing of a metal rod immersed in inductively coupled plasma. A SUS(stainless steel) tube, rod were tested for low thermal conductivity materials and copper for high thermal conductivity ones. At 10 mTorr of Ar ICP(inductively coupled plasma) with 2.4 MHz, 300 W, the surface temperature of a SUS rod reached to $1,289^{\circ}C$ with a dc bias of 150 W (-706 V, 0.21 A) in 2 mins. For 10 min of sputter-sublimation, 0.1 gr of SUS rod was sputter-sublimated which is a good evidence of a high rate deposition source. ICP is used for sputter-sublimation of a target material, for substrate pre-treatment, film quality improvement by high energy particle bombardment and reactive deposition.

• Journal of the Korean institute of surface engineering
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• v.29 no.2
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• pp.93-99
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• 1996

In this work BN thin films were deposited on Si substrate by R. F. sputtering method at $200^{\circ}C$ and in Ar + $N_2$ mixed gas atmosphere. In order to investigate the effect of ion bombardment on substrate for c-BN bonding, substrate bias voltage was applied. The optimum substrate bias voltage for c-BN bonding was determined by FTIR analysis on specimens which were deposited with various bias voltages. Then BN thin film was deposited with this optimum condition and its phase, morphology, chemical composition, and refractive index were compared with those of BN film which was deposited without bias voltage. FTIR results showed that BN films deposited with substrate bias voltage were composed of mixed phases of c-BN and h-BN, while those deposited without bias voltage were h-BN only. When pure Ar gas was used for sputtering gas, BN films were delaminated easily from substrate in air, while when 10% $N_2$ gas was added to the sputtering gas, although c-BN specific infrared peak was reduced, delamination did not occur. GXRD and TEM results showed that BN films were amorphous phases regardless of substrate bias voltage, and AES results showed that the chemical compositions of B/N were about 1.7~1.8. The refractive index of BN film deposited with bias voltage was higher than that without bias voltage. The reason is believed to be the existence of c-BN bonding in BN film and the higher density of film that deposited with the substrate bias voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.74-75
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• 2007

We report on the characteristics of organic light-emitting diodes with Al cathode deposited by specially designed twin target sputter(TTS) system. It was found that the Al cathode films grown by TTS system were amorphous structure with nanocrystallines due to low substrate temperature during sputtering process. Effective confinement of high-density plasma between two Al targets lead to low temperature sputtering process on organic layer. Moreover, organic light-emitting diodes with Al cathode deposited by TTS system exhibited low leakage current density of $4{\times}10^{-6}\;mA/cm2$ at -6 V indicating plasma damage due to bombardment of energetic particles such as ions and $\gamma$-electrons was effectively restricted in the ITS system. Sputtering method using ITS system is expected to be applied in organic electronics and flexible displays due to its low temperature and plasma damage free deposition process.