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http://dx.doi.org/10.4313/JKEM.2002.15.5.388

A Study on Etch Characteristics of CeO2 Thin Film in An Ar/CF4/Cl2 Plasma  

장윤성 (중앙대학교 전자전기공학부)
김동표 (중앙대학교 전자전기공학부)
김창일 (중앙대학교 전자전기공학부)
장의구 (중앙대학교 전자전기공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.15, no.5, 2002 , pp. 388-392 More about this Journal
Abstract
In this work, the etching of $CeO_2$ thin films has been performed in an inductively coupled $Ar/CF_4/Cl_2$ plasma. The highest etch rate of the $CeO_2$ thin film ws 250 ${\AA}/min$ and the selectivity of CeO$_2$to SBT was 0.4 at a 10% additive $Cl_2$ into Ar/($Ar+CF_4$)gas mixing ratio of 0.8. From result of X-ray photoelectron spectroscopy (XPS) analysis, there are Ce-Cl and Ce-F bonding by chemical reaction between Cl, F and Ce. During the etching of $CeO_2$ thin films in $Ar/CF_4/Cl_2$ plama, Ce-Cl and Ce-F bond is formed, and these prodcuts can be removed by the physical bombardment of Ar ions. The 10% additive $Cl_2$ into the Ar/($Ar+CF_4$)gas mixing ratio of 0.8 could enhance the reaction between Cl, F and Ce.
Keywords
MFIS; $CeO_2$; Etching; $Cl_2/CF_4/Ar$; FRAM;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
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