• ETRI Journal
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• v.15 no.2
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• pp.11-25
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• 1993

Interface trap densities at gate oxide/silicon substrate ($SiO_2/Si$) interfaces of metal oxide semiconductor field-effect transistors (MOSFETs) were determined from the substrate bias dependence of the subthreshold slope measurement. This method enables the characterization of interface traps residing in the energy level between the midgap and that corresponding to the strong inversion of small size MOSFET. In consequence of the high accuracy of this method, the energy dependence of the interface trap density can be accurately determined. The application of this technique to a MOSFET showed good agreement with the result obtained through the high-frequency/quasi-static capacitance-voltage (C-V) technique for a MOS capacitor. Furthermore, the effective substrate dopant concentration obtained through this technique also showed good agreement with the result obtained through the body effect measurement.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.12
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• pp.53-58
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• 1998

A buried channel poly-Si TFT (BCTFT) for application of high performance integrated circuits has been proposed and fabricated. BCTFT has unique features, such as the moderately-doped buried channel and counter-doped body region for conductivity modulation, and the fourth terminal entitled back bias for preventing kink effect. The n-type and p-type BCTFT exhibits superior performance to conventional poly-Si TFT in ON-current and field effect mobility due to moderate doping at the buried channel. The OFF-state leakage current is not increased because the carrier drift is suppressed by the p-n junction depletion between the moderately-doped buried channel and the counter-doped body region.

• Journal of Sensor Science and Technology
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• v.31 no.1
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• pp.1-5
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• 2022

In this paper, the photocurrent characteristics of gate/body-tied (GBT) metal-oxide semiconductor field-effect transistor (MOSFET)-type photodetector with high sensitivity in the 408 nm - 941 nm range are presented. High sensitivity is important for photodetectors, which are used in several scientific and industrial applications. Owing to its inherent amplifying characteristics, the GBT MOSFET-type photodetector exhibits high sensitivity. The presented GBT MOSFET-type photodetector was designed and fabricated via a standard 0.18 ㎛ complementary metal-oxide-semiconductor (CMOS) process, and its characteristics were analyzed. The photodetector was analyzed with respect to its width to length (W/L) ratio, bias voltage, and incident-light wavelength. It was confirmed experimentally that the presented GBT MOSFET-type photodetector has over 100 times higher sensitivity than a PN-junction photodiode with the same area in the 408 nm - 941 nm range.

• The Journal of Churna Manual Medicine for Spine and Nerves
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• v.11 no.1
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• pp.1-10
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• 2016

Objectives : The purpose of this study was to review the effectiveness of Chuna manual therapy for the treatment of tension type headache(TTH). Methods : All processes were independently carried out by three investigators. Literature search was performed in 3 databases(pubmed, OASIS, NDSL) from their inception to May 2016. Searched reports was twice excluded for title, abstract and body. And then, data extract and analysis was done before assessing risk of bias by Cochrane Handbook. Results : 11 RCT were included. Generally, Fascia Chuna therapy and Chuna spine & joint manipulation therapy were used for TTH. Except for 1 report, Chuna manual therapy was shown to be effective in treating TTH. In assessing risk of bias, because of the characteristic of intervention, blinding of participants was high risk of bias in most reports. Conclusions : Chuna manual therapy was shown to be effective in treating TTH. In korea, better designed trials with high quality is needed from now on.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.22 no.5
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• pp.171-179
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• 2021

This study was a meta-analysis of previous studies that subjected stroke patients to the whole-body vibration exercise, in an attempt to evaluate the effectiveness of such exercise in improving their balance and walking ability. The electronic databases used for literature search were the National Assembly Library, Korean Educational Academic Information (RISS), Korean Academic Information (KISS), and Nuri Media (DBPIA). We also investigated a prior study of the whole-body vibration exercise applied to stroke patients from January 2010 to August 2020. In assessing the quality of the study, the RCT (randomized controls trials) study used the risk of bias 2 (RoB2) tool developed by the Cochrane group. Meta-analysis was performed using R software for statistical computing version 4.0.3. The results of the study confirmed that the overall effect size was 0.40, and the whole-body vibration exercise used had a moderate effect on the balance and gait of stroke patients, the effect size of balance was 0.44, and the effect size of gait was 0.36, showing a positive effect. These results indicated that the whole-body vibration exercise is an effective intervention for stroke patients, and further research is needed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.95-96
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• 2009

A fully depleted capacitorless 1-transistor dynamic random access memory (FD 1T-DRAM) based on a sSOI strained-silicon-on-insulator) wafer was investigated. The fabricated device showed excellent electrical characteristics of transistor such as low leakage current, low subthreshold swing, large on/off current ratio, and high electron mobility. The FD sSOI 1T-DRAM can be operated as memory device by the floating body effect when the substrate bias of -15 V is applied, and the FD sSOI 1T-DRAM showed large sensing margin and several milli seconds data retention time.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.719-722
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• 2003

This work investigates the device degradation p-channel PD SOI devices at various applied voltages as well as stress temperatures with respect to Body-Contact SOI (BC-SOI) and Floating-Body SOI (FB-SOI) MOSFETs. It is observed that the drain current degradation at the gate voltage of the maximum gate current is more significant in FB-SOI devices than in BC-SOI devices. For a stress at the gate voltage of the maximum gate current and elevated temperature, it is worth noting that the $V_{PT}$ Will be decreased by the amount of the HEIP plus the temperature effects. For a stress at $V_{GS}$ = $V_{DS}$ . the drain current decreases moderately with stress time at room temperature but it decreases significantly at the elevated temperature due to the negative bias temperature instability.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2016.10a
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• pp.533-536
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• 2016

This paper describes a vibrational energy harvesting circuit with MPPT control. A high-performance AC-DC converter of which the efficiency is improved by using body-bias technique and bulk-driven technique is proposed and applied for the vibrational energy harvesting circuit design. MPPT (Maximum Power Point Tracking) control function is implemented using the linear relationship between the open-circuit voltage of a vibrational device and its MPP voltage. The designed MPPT control circuit traces the maximum power point by periodically sampling the open circuit voltage of a vibrational device, makes the reference voltages using sampled voltage and delivers the maximum available power to load. The proposed circuit is designed with a $0.35{\mu}m$ CMOS process, and the chip area is $1.21mm{\times}0.98mm$.

• Journal of the Korean Society of Costume
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• v.55 no.6 s.96
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• pp.109-124
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• 2005

The object of this study was to identify the production technique and immediate constituent of lingerie by examining the materials and the sewing techniques. Various papers are referenced for theoretical study and the elements and techniques of lingerie are analyzed based on photographical materials. From the late 20C century to the present time was the research time period. This paper concludes as follows: 1 Decorative method: Lace, Ribbons, piping, elastic bands were some of the decorative materials attached to the garments by zigzag stitch. 2. Flat pattern making: Lingerie patterns were drafted in smaller size than the patterns of outer garments. Bias cut would be applied for the noll-stretchable fabrics. 3. Draping: Bias grain would be applied for the non-stretch fabric. When draping stretch fabrics, follow the grain line of the fabrics and pull the fabric so that it could fit onto the body. 4. Production technique: Straight stitch would be applied for non-stretch fabrics. Zigzag stitch would be applied for stretch fabrics.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.36-39
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• 2000

A small electrical potential difference which appears on any solid body when subjected to illumination by a modulated light beam generated by laser is called photocharge voltage(PCV)[1,2]. This voltage is proportional to the induced change in the surface electrical charge and is capacitatively measured on various materials such as conductors, semiconductors, ceramics, dielectrics and biological objects. The amplitude of the detected signal depends on the type of material under investigation, and on the surface properties of the sample. In photocharge voltage spectroscopy measurements[3], the sample is illuminated by both a steady state monochromatic bias light and the pulsed laser. The monochromatic light is used to created a variation in the steady state population of trap levels in the surface and space charge region of semiconductor samples which does result in a change in the measured voltage. Using this technique the spatial variation of PCV can be utilized to evalulate the surface conditions of the sample and the variation of the PCV due to the monochromatic bias light are utilized to charactrize the surface states. A qualitative analysis of the proposed measuremen is present along with experimental results performed on amorphous silicon samples. The deposition temperature was varied in order to obtain samples with different structural, optical and electronic properties and measurements are related to the defect density in amorphous thin film.