• Title/Summary/Keyword: blocking oxide

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Development of harmful ultraviolet blocking transparent flexible device using TiO2-x thin film process (TiO2-x 산화물 박막공정을 이용한 유해자외선차단 투명유연소재개발)

  • Kim, Geug Tae
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.29 no.3
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    • pp.123-131
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    • 2019
  • In this study, the development of transparent UV blocking material using $TiO_{2-x}$ oxide thin film process was developed. A process technology is related to a process technology for making a sample with ultraviolet-shielding property of visible light transmittance of 78 % or more (total light transmittance at 550 nm) and of a UV cut-off characteristic of more than 95 % at 315 nm in ultraviolet wavelength band. In this study, it is possible to establish a flexible device process condition of high performance ultraviolet (UV) shielding thin film, to design mixed type of transparent flexible device with heterogeneous characteristics and to formulate composite deposition technology, according to various market demands. Establishment of actual roll-to-roll continuous process and equipment and process technology will affect related industries greatly.

Inhibition of Inducible Nitric Oxide Synthase and Cyclooxygenase-2 by Gamijihwang-tang Via Suppression of Nuclear Factor-B Activation in RAW 264.7 cells

  • Jang Du-Hyun;Kim Ji-Young;Han Eun-Hee;Park Hee-Ok;Kim Dong-Hee;Jeong Hye-Gwang;Yoo Dong-Yeol
    • Journal of Physiology & Pathology in Korean Medicine
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    • v.19 no.5
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    • pp.1405-1410
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    • 2005
  • Asthma is recognized today as an inflammatory disease of the lung characterized by acute non-specific airway hypersensitiveness in association with chronic pulmonary inflammation. Gamijihwang-tang(GJT), a fortified prescription of YMJHT, is applied for the treatments of chronic coughing and asthma, and post-delivery coughing and asthma in the gynecology. Also in the clinical practice, GJT is known to be very effective for controlling coughing and asthma as a cold sequoia. In this study, we investigated the effects of GJT on the lipopolysaccharide (LPS)-induced nitric oxide (NO) and prostaglandin $E_2$ ($PGE_2$) production, and on the level of inducible nitric oxide synthase (iNOS) and Cyclooxygenase-2 expression in murine macrophage RAW 264.7 cells. We found that GJT inhibited LPS-induced NO and $PGE_2$ production in a dose dependent manner. Furthermore, GJT inhibited the expression of LPS-induced iNOS and COX-2 protein and mRNA expression in RAW 264.7 macrophages. Treatment with GJT of RAW 264.7 cells transfected with a reporter construct indicated a reduced level of LPS-induced nuclear factor-KB (NF-kB) activity and effectively lowered NF-kB binding as measured by transient transfection assay. These results suggest that the main inhibitory mechanism of the GJT may be the reduction of iNOS and COX-2 gene expression through blocking of NF-kB activation.

Progress of High-k Dielectrics Applicable to SONOS-Type Nonvolatile Semiconductor Memories

  • Tang, Zhenjie;Liu, Zhiguo;Zhu, Xinhua
    • Transactions on Electrical and Electronic Materials
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    • v.11 no.4
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    • pp.155-165
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    • 2010
  • As a promising candidate to replace the conventional floating gate flash memories, polysilicon-oxide-nitride-oxidesilicon (SONOS)-type nonvolatile semiconductor memories have been investigated widely in the past several years. SONOS-type memories have some advantages over the conventional floating gate flash memories, such as lower operating voltage, excellent endurance and compatibility with standard complementary metal-oxide-semiconductor (CMOS) technology. However, their operating speed and date retention characteristics are still the bottlenecks to limit the applications of SONOS-type memories. Recently, various approaches have been used to make a trade-off between the operating speed and the date retention characteristics. Application of high-k dielectrics to SONOS-type memories is a predominant route. This article provides the state-of-the-art research progress of high-k dielectrics applicable to SONOS-type nonvolatile semiconductor memories. It begins with a short description of working mechanism of SONOS-type memories, and then deals with the materials' requirements of high-k dielectrics used for SONOS-type memories. In the following section, the microstructures of high-k dielectrics used as tunneling layers, charge trapping layers and blocking layers in SONOS-type memories, and their impacts on the memory behaviors are critically reviewed. The improvement of the memory characteristics by using multilayered structures, including multilayered tunneling layer or multilayered charge trapping layer are also discussed. Finally, this review is concluded with our perspectives towards the future researches on the high-k dielectrics applicable to SONOS-type nonvolatile semiconductor memories.

Effect of zinc oxide nanoparticle types on the structural, mechanical and antibacterial properties of carrageenan-based composite films (산화아연 나노입자 유형이 카라기난 기반 복합 필름의 구조, 기계적 및 항균 특성에 미치는 영향)

  • Ga Young Shin;Hyo-Lyn Kim;So-Yoon Park;Mi So Park;Chanhyeong Kim;Jae-Young Her
    • Food Science and Preservation
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    • v.31 no.1
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    • pp.126-137
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    • 2024
  • In this study, zinc oxide nanoparticles (ZnONPs) were synthesized using three distinct zinc salts: zinc acetate, zinc chloride, and zinc nitrate. These ZnONPs were subsequently utilized in the fabrication of carrageenan-ZnONPs (Car-ZnONPs) composite films. The study assessed influence of the various ZnONPs on the morphological, water vapor barrier, color, optical, and antimicrobial properties of the Car-ZnONPs composite films. The surface morphology and UV-blocking attributes of the composite films were affected by the type of ZnONPs used, but their surface color, transparency, and chemical structure remained unaltered. The composite film's thickness and elongation at break (EB) significantly increased, while the tensile strength significantly decreased. In contrast, film's elastic modulus (EM) and water vapor permeability coefficient (WVP) showed no significant difference. All the composite films with added ZnONPs demonstrated potent antibacterial activity against Escherichia coli O157:H7 and Listeria monocytogenes . Among the carrageenan-based composite films, Car-ZnONPsZC showed the highest antibacterial and UV-blocking properties, and its elongation at break was significantly higher than that of the pure carrageenan films. This suggests that ZnONPs composite films have the potential to be used as an active packaging film, preserve the safety of the packaged food and extend shelf life.

Characteristics of Non-nano Needle Type Zinc Oxide and Its Application in Sunscreen Cosmetics (Non-nano 막대형 산화아연의 특성 및 자외선 차단용 화장품에의 응용)

  • Chong, Kyo Un;Xuan, Song Hua;Yoon, Yeo Min;Kim, Sang-uk;Choi, Bou Kun;Lee, Sung Ho;Park, Soo Nam;Lee, Jong Sung
    • Journal of the Society of Cosmetic Scientists of Korea
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    • v.47 no.1
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    • pp.1-7
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    • 2021
  • With increasing interest in the effectiveness and safety of sunscreen worldwide, research on the development of new inorganic sunscreen is also gaining momentum. In the present study, non-nano sized needle type zinc oxide, which can meet the regulation of nano-material as a recent problem, has been synthesized and surface-modified with cetyl alcohol to obtain needle type zinc oxide powder. Here, we also investigated their physical properties and evaluated their potential application as sunscreens. As a result of the experiment, the sunscreen with needle type zinc oxide powder, which was non-nano, showed similar UV-protection properties and transparency compare to that of 40nm size zinc oxide. It was further confirmed that the UV blocking effect was significantly increased when the needle type zinc oxide dispersion was applied to the sunscreen. Therefore, although the needle type zinc oxide is non-nano (200 nm) material, it has the potential to be applied to the product as an excellent transparency (improvement of whiteness), UV protection efficacy and smooth texture.

The pepsinolytic hydrolysate from Johnius belengerii frame inhibited LPS-stimulated production of pro-inflammatory mediators via the inactivating of JNK and NF-κB pathways in RAW 264.7 macrophages

  • Heo, Seong-Yeong;Ko, Seok-Chun;Jung, Won-Kyo
    • Fisheries and Aquatic Sciences
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    • v.21 no.5
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    • pp.14.1-14.8
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    • 2018
  • The objective of this study was to investigate the anti-inflammatory effects of the pepsinolytic hydrolysate from the fish frame, Johnius belengerii, on lipopolysaccharide (LPS)-stimulated RAW 264.7 macrophages. The J. belengerii frame hydrolysate (JFH) significantly suppressed nitric oxide (NO) secretion on LPS-stimulated RAW264.7 macrophages. Moreover, the JFH markedly inhibited the levels of protein and mRNA expression of inducible nitric oxide synthase (iNOS) and cyclooxygenase-2 (COX-2). Furthermore, the LPS-stimulated mRNA expression of pro-inflammatory cytokines, including tumor necrosis factor $(TNF)-{\alpha}$, interleukin $(IL)-1{\beta}$, and IL-6 was downregulated when cells were cultured with the JFH. The JFH significantly reduced the phosphorylation of c-Jun N-terminal kinase (JNK) and the translocation of nuclear factor-kappa B ($NF-{\kappa}B$) in macrophages. As the result, the JFH has the potential anti-inflammatory activity via blocking the JNK and $NF-{\kappa}B$ signal pathways.

High Density and Low Voltage Programmable Scaled SONOS Nonvolatile Memory for the Byte and Flash-Erased Type EEPROMs (플래시 및 바이트 소거형 EEPROM을 위한 고집적 저전압 Scaled SONOS 비휘발성 기억소자)

  • 김병철;서광열
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.10
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    • pp.831-837
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    • 2002
  • Scaled SONOS transistors have been fabricated by 0.35$\mu\textrm{m}$ CMOS standard logic process. The thickness of stacked ONO(blocking oxide, memory nitride, tunnel oxide) gate insulators measured by TEM are 2.5 nm, 4.0 nm and 2.4 nm, respectively. The SONOS memories have shown low programming voltages of ${\pm}$8.5 V and long-term retention of 10-year Even after 2 ${\times}$ 10$\^$5/ program/erase cycles, the leakage current of unselected transistor in the erased state was low enough that there was no error in read operation and we could distinguish the programmed state from the erased states precisely The tight distribution of the threshold voltages in the programmed and the erased states could remove complex verifying process caused by over-erase in floating gate flash memory, which is one of the main advantages of the charge-trap type devices. A single power supply operation of 3 V and a high endurance of 1${\times}$10$\^$6/ cycles can be realized by the programming method for a flash-erased type EEPROM.

Effects of Astaxanthin on the Production of NO and the Expression of COX-2 and iNOS in LPS-Stimulated BV2 Microglial Cells

  • Choi, Seok-Keun;Park, Young-Sam;Choi, Dong-Kug;Chang, Hyo-Ihl
    • Journal of Microbiology and Biotechnology
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    • v.18 no.12
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    • pp.1990-1996
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    • 2008
  • Astaxanthin has shown antioxidant, antitumor, and anti-inflammatory activities; however, its molecular action and mechanism in the nervous system have yet to be elucidated. We examined the in vitro effects of astaxanthin on the production of nitric oxide (NO), as well as the expression of inducible NO synthase (iNOS) and cyclooxygenase-2 (COX-2) in lipopolysaccharide (LPS)-stimulated BV2 microglial cells. Astaxanthin inhibited the expression or formation of nitric oxide (NO), iNOS and COX-2 in lipopolysaccharide (LPS)-stimulated BV-2 microglial cells. Astaxanthin also suppressed the protein levels of iNOS and COX-2 in LPS-stimulated BV2 microglial cells. These results suggest that astaxanthin, probably due to its antioxidant activity, inhibits the production of inflammatory mediators by blocking iNOS and COX-2 activation or by the suppression of iNOS and COX-2 degradation.

ITO Nanowires-embedded Transparent Metal-oxide Semiconductor Photoelectric Devices (ITO 나노와이어 기반의 투명 산화물 반도체 광전소자)

  • Kim, Hyunki;Kim, Hong-Sik;Patel, Malkeshkumar;Kim, Joondong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.12
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    • pp.808-812
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    • 2015
  • Highly optical transparent photoelectric devices were realized by using a transparent metal-oxide semiconductor heterojunction of p-type NiO and n-type ZnO. A functional template of ITO nanowires (NWs) was applied to this transparent heterojunction device to enlarge the light-reactive surface. The ITO NWs/n-ZnO/p-NiO heterojunction device provided a significant high rectification ratio of 275 with a considerably low reverse saturation current of 0.2 nA. The optical transparency was about 80% for visible wavelengths, however showed an excellent blocking UV light. The nanostructured transparent heterojunction devices were applied for UV photodetectors to show ultra fast photoresponses with a rise time of 8.3 mS and a fall time of 20 ms, respectively. We suggest this transparent and super-performing UV responser can practically applied in transparent electronics and smart window applications.

Effects of Alloying Elements on the Characteristics of Microstructure and High Temperature Oxidation of Cast Austenitic Stainless Steel (오스테나이트 스테인리스 주강의 미세 조직 및 고온 산화 특성에 미치는 합금원소의 영향)

  • Lee, In-Sung;Jeon, Soon-Hyeok;Kim, Soon-Tae;Lee, Jung-Suk;Ko, Young-Sang;Kim, Jong-Myoung
    • Journal of Korea Foundry Society
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    • v.30 no.5
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    • pp.179-186
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    • 2010
  • To elucidate the effects of alloying elements on the characteristics of microstructure and high temperature oxidation of cast austenitic stainless steel, a thermodynamic calculation, a cyclic oxidation test, a X-ray diffraction, a scanning electron microscopy-back scattered electron, a electron probe microanalysis were conducted. The thermodynamic calculation for the effect of vanadium (V) addition on the formation of various precipitates leads to a decrease of chromium (Cr)-rich $M_{23}C_6$ carbides due to the formation of M (C, N) carbo-nitrides containing V and / or niobium (Nb). The V added alloy increased the resistance to high temperature oxidation due to a decrease of Cr-depleted zone deteriorating the oxidation resistance and due to the V-enriched oxide layer formed in inner oxide layer blocking the outward transport of cations.