High Density and Low Voltage Programmable Scaled SONOS Nonvolatile Memory for the Byte and Flash-Erased Type EEPROMs |
김병철
(진주산업대학교 전자공학과)
서광열 (광운대학교 반도체 및 신소재공학과) |
1 |
New scaling guidelines for MNOS nonvolatile memory devices
/
DOI ScienceOn |
2 |
Yield and reliability of MNOS EEPROM products
/
DOI ScienceOn |
3 |
플래시메모리를 위한 Scaled SONOSFET NVSM의 프로그래밍 조건과 특성에 관한 연구
/
과학기술학회마을 |
4 |
SONOS EEPROM 소자에 관한 연구
/
과학기술학회마을 |
5 |
A low voltage SONOS nonvolatile semiconductor memory technology
/
|
6 |
A novel SONOS structure for non-volatile memories with improved data retention
/
|
7 |
A SONOS nonvolatile memory cell for semiconductor disk application
/
|
8 |
Tunnel oxide thickness optimization for high-performance MNOS nonvolatile memory devices
/
|
9 |
Charge transport and storage of low programming voltage SONOS/MONOS memory devices
/
DOI ScienceOn |
10 |
MONOS memory cell scalable to 0.1㎛ and beyond
/
|
11 |
NOR 플래시메모리를 위한 전하트랩형 NVSM 셀의 제작과 특성
/
과학기술학회마을 |
12 |
The effects of high temperature annealing on MNOS devices
/
DOI ScienceOn |