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http://dx.doi.org/10.4313/JKEM.2015.28.12.808

ITO Nanowires-embedded Transparent Metal-oxide Semiconductor Photoelectric Devices  

Kim, Hyunki (Photoelectric and Energy Device Application Lab (PEDAL), Department of Electrical Engineering, Incheon National University)
Kim, Hong-Sik (Photoelectric and Energy Device Application Lab (PEDAL), Department of Electrical Engineering, Incheon National University)
Patel, Malkeshkumar (Photoelectric and Energy Device Application Lab (PEDAL), Department of Electrical Engineering, Incheon National University)
Kim, Joondong (Photoelectric and Energy Device Application Lab (PEDAL), Department of Electrical Engineering, Incheon National University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.28, no.12, 2015 , pp. 808-812 More about this Journal
Abstract
Highly optical transparent photoelectric devices were realized by using a transparent metal-oxide semiconductor heterojunction of p-type NiO and n-type ZnO. A functional template of ITO nanowires (NWs) was applied to this transparent heterojunction device to enlarge the light-reactive surface. The ITO NWs/n-ZnO/p-NiO heterojunction device provided a significant high rectification ratio of 275 with a considerably low reverse saturation current of 0.2 nA. The optical transparency was about 80% for visible wavelengths, however showed an excellent blocking UV light. The nanostructured transparent heterojunction devices were applied for UV photodetectors to show ultra fast photoresponses with a rise time of 8.3 mS and a fall time of 20 ms, respectively. We suggest this transparent and super-performing UV responser can practically applied in transparent electronics and smart window applications.
Keywords
Transparent photoelectric devices; ITO nanowires; NiO; ZnO; Heterojunction;
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