• Title/Summary/Keyword: blocking effect

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Blocking Effect Reduction Techniques for Image Coding (영상 부호화에서 발생하는 블록경계 현상을 줄이는 방법)

  • 김대희;호요성
    • Journal of Broadcast Engineering
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    • v.3 no.2
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    • pp.111-117
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    • 1998
  • Due to independent processing of image block, DCT-based block coding algorithms can produce the blocking effect qhich is gray-level discontinuity along block boundaries of the reconstructed image. In this paper, we have proposed two techniques to reduce the blocking effect: two-stage transform coding with variable quantizer and the globally optimum filtering. We have also compared performances of our algorithms and other conventional algorithms by applying optimal allocation.

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A Measure for Evaluating the Effect of Blocking in Response Surface Designs Using Cuboidal Regions (입방형 영역을 사용한 반응표면계획에서 블록효과를 평가하기 위한 측도)

  • 박상현;장대흥
    • Journal of Korean Society for Quality Management
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    • v.27 no.1
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    • pp.59-79
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    • 1999
  • The fitting of a response surface model and the subsequent exploration of the response surface are usually based on the assumption that the experimental runs are carried out under homogeneous conditions. This, however, may be quite often difficult to achieve in many experiments. To control such an extraneous source of variation, the response surface design should be arranged in several blocks within which homogeneity of conditions can be maintained. In this case, when fitting a response surface model, the least squares estimates of the model's parameters and the prediction variance will generally depend on how the response surface design is blocked. That is, the choice of a blocking arrangement for a response surface design can have a considerable effect on estimating the mean response and on the size of the prediction variance. In this paper, we propose a measure for evaluating the effect of blocking of response surface designs using cuboidal regions.

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Application of Generalized Transmission Line Models to Mixed Ionic-Electronic Transport Phenomena

  • Ahn, Pyung-An;Shin, Eui-Chol;Kim, Gye-Rok;Lee, Jong-Sook
    • Journal of the Korean Ceramic Society
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    • v.48 no.6
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    • pp.549-558
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    • 2011
  • Application of a generalized equivalent circuit including the electrode condition for the Hebb-Wagner polarization in the frequency domain proposed by Jamnik and Maier can provide a consistent set of material parameters, such as the geometric capacitance, partial conductivities, chemical capacitance or diffusivity, as well as electrode characteristics. Generalization of the shunt capacitors for the chemical capacitance by the constant phase elements (CPEs) was applied to a model mixed conducting system, $Ag_2S$, with electron-blocking AgI electrodes and ion-blocking Pt electrodes. While little difference resulted for the electron-blocking cell with almost ideal Warburg behavior, severely non-ideal behavior in the case of Pt electrodes not only necessitates a generalized transmission line model with shunt CPEs but also requires modelling of the leakage in the cell approximately proportional to the cell conductance, which then leads to partial conductivity values consistent with the electron-blocking case. Chemical capacitance was found to be closer to the true material property in the electron-blocking cell while excessively high chemical capacitance without expected silver activity dependence resulted in the electron-blocking cell. A chemical storage effect at internal boundaries is suggested to explain the anomalies in the respective blocking configurations.

The Effect of Blocking Layer Design Variable on the Characteristics of GaN-based Light-Emitting Diode (차단층 설계 변수가 GaN 기반 LED 특성에 미치는 영향)

  • Lee, Jae-Hyun;Yeom, Keesoo
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2012.10a
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    • pp.233-236
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    • 2012
  • In this paper, the output characteristics of GaN-based LED considering blocking layer design variables are analyzed. The basic structure of the LED consists of active region of GaN barrier and InGaN quantum well between AlGaN EBL(Electron Blocking Layer) and AlGaN HBL(Hole Blocking Layer) on GaN buffer layer. The output power, internal quantum efficiency characteristics of LED active region considering Al mole fraction of EBL, thickness of EBL, Al mole fraction of HBL and doping concentration of HBL are analyzed using ISE-TCAD.

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The Blocking Effect of Sunscreen Materials on Blue Light (자외선 차단제의 블루라이트 차단효과에 관한 연구)

  • Chung, Sang Uk;Lee, Si Eun;Choi, Sun Young;Moon, Kwon Ki;Lim, Sora;Kim, Hae Kyoung;Park, Jong Ho
    • Journal of the Society of Cosmetic Scientists of Korea
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    • v.44 no.2
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    • pp.183-189
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    • 2018
  • Blue light is the highest energy wavelengths in the visible light region and induces skin aging and active oxygen. Studies on harmful mechanism of skin are under way. Research on blue light blocking materials in cosmetics and formulation studies are in the early stage, and the test methods related to blue light blocking measurement are not established. The blue light blocking efficacy was established by referring to the test method of the sunscreen in vitro test(COLIPA guideline, ISO 24443, FDA Final Rule on Sunscreen Testing and Labeling). The blue light blocking effect was evaluated for 17 kinds out of 27 kinds of sunscreen raw materials suggested in KFDA guideline. The Effect was 14.97% for zinc oxide and 16.32% for bishexyloxyphenol methoxyphenyl triazine, 35.47% for methylene bis-benzotriazolyltetramethylbutylphenol, and 65.96% for titanium dioxide. In addition, the effect of micro-titanium dioxide was twice as high as that of the nano-titanium dioxide. The results suggested that the light blocking effect test method can be used to search for blue light blocking materials and study cosmetic formulations.

A Novel Trench Electrode BRT with the Intrinsic Region for Superior Electrical Characteristics (고내압 특성을 위한 진성영역과 트렌치 구조를 갖는 베이스 저항 사이리스터)

  • 강이구;성만영
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.3
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    • pp.201-207
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    • 2002
  • In this paper, we haute proposed a novel trench electrode Base Resistance Thyristor(BRT) and trench electrode BRT with a intrinsic region. New power BRTs have shown superior electrical characteristics including the snab-back effect and the forward blocking voltage more than the conventional BRT. Especially, the trench electrode BRT with the intrinsic region has obtained high blocking voltage of 1600V. The blocking voltage of conventional BRT is about 400V at the same size. Because the breakdown mechanism of the BRT is the avalanch breakdown by impact ionization, the trench electrode BRT with intrinsic region has suppressed impact ionization, effectively. If we use this principle, we can develop a super high voltage power device and it applies to another power device including IGBT, EST and etc.

Blind Measurement of Blocking Artifacts in Block-based DCT Image Coder (블록기반 DCT 영상 부호화기의 블록화 왜곡 블라인드 측정)

  • Chung, Tae-Yun;Park, Sung-Wook
    • Journal of the Korean Institute of Intelligent Systems
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    • v.14 no.1
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    • pp.39-45
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    • 2004
  • This paper proposes a new blind measurement model of blocking artifacts. This model plays an important role in the assessment and enhancement of image quality caused by block-based DCT coding system. The proposed model can measure blocking artifacts without reference to original images and consider the HVS based visual model such as frequency sensitivity and channel masking effect to detect and measure overall blocking artifacts quantitatively. The experimental results show that the proposed model is highly effective in measuring blocking artifacts.

New Appraisal Method for Blocking Effects in Subimage Coding

  • Park, Jae-Ho;Kwak, Hoon-Sung
    • Journal of Electrical Engineering and information Science
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    • v.1 no.1
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    • pp.77-81
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    • 1996
  • Considering the human visual masking property, a modified relationship between the activity function and the visibility threshold is developed. This leads to a novel objective appraisal method for blocking effects in a lossy subimage coding by virtue of the human visual sensitivity. The appraisal criterion is examined using a series of reconstructed images that are DCT-coded at various bit rates. Experimental results show that the presented blocking effect measure well agrees with the subjective ranking.

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Study of Switching and Kirk Effects in InAlAs/InGaAs/InAlAs Double Heterojunction Bipolar Transistors

  • Mohiuddin, M.;Sexton, J.;Missous, M.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.5
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    • pp.516-521
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    • 2013
  • This paper investigates the two dominant but intertwined current blocking mechanisms of Switching and Kirk Effect in pure ternary InAlAs/InGaAs/InAlAs Double Heterojunction Bipolar Transistors (DHBTs). Molecular Beam Epitaxy (MBE) grown, lattice-matched samples have been investigated giving substantial experimental results and theoretical reasoning to explain the interplay between these two effects as the current density is increased up to and beyond the theoretical Kirk Effect limit for devices of emitter areas varying from $20{\times}20{\mu}m^2$ to $1{\times}5{\mu}m^2$. Pure ternary InAlAs/InGaAs/InAlAs DHBTs are ideally suited for such investigations because, unless corrective measures are taken, these devices suffer from appreciable current blocking effect due to their large conduction band discontinuity of 0.5 eV and thus facilitating the observation of the two different physical phenomena. This enhanced understanding of the interplay between the Kirk and Switching effect makes the DHBT device design and optimization process more effective and efficient.