• Proceedings of the Korean Magnestics Society Conference
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• 2001.04a
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• pp.28-29
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• 2001

No Abstract, See Full-text

• Proceedings of the Korean Magnestics Society Conference
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• 2005.12a
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• pp.123-123
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• 2005

• Proceedings of the Korean Magnestics Society Conference
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• 1999.10a
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• pp.98-99
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• 1999

• Proceedings of the Korean Magnestics Society Conference
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• 2016.11a
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• pp.76-76
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• 2016

• Journal of Magnetics
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• v.11 no.2
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• pp.66-69
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• 2006

Local magnetization reversal in the exchange-biased NiFe/FeMn and $[Pd/Co]_5/FeMn$ multilayers with in-plane and out-of-plane magnetic anisotropy was achieved by using laser annealing. The local annealed NiFe/FeMn film under the opposite magnetic field shows a magnetoresistance (MR) curve having two symmetric peaks at the positive and negative exchange biasing field (${\pm}H_{ex}$). The intensity of the nucleated MR peak rises as the exposed area extends during the laser annealing process, and the peak disappears under the reverse magnetic field. In the case of [Pd/Co]/FeMn films, the local magnetization reversal increased gradually as the laser power increases. The locally reversed magnetization was restored under the opposite magnetic field.

• Journal of Internet Computing and Services
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• v.14 no.1
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• pp.9-14
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• 2013

The criterion of zero-error probability provides a limitation on error probability functions being used for adaptive systems when the error samples are shifted by the influence of DC-bias noise. In this paper, we employ a bias term in the error distribution and propose a new criterion of the biased zero-error probability with error being zero. Also, by maximizing the proposed criterion on expanded filter structures, a supervised adaptive algorithm has been derived. From the simulation results of supervised equalization, the algorithm based on the proposed criterion yielded zero-centered and highly concentrated error samples without disturbance in the environments of strong impulsive and DC-bias noise.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.833-836
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• 2005

Nano-gap trench is fabricated by the novel electrochemical etching technique using forward biased PN junction formed at the backside of the wafer. PN junction is formed using boron nitride wafer and the concentration of the boron doping is the high value of $1{\times}10^{19}$ $cm^{-3}$. The electro-chemical etching is performed in the 5% HF solution under the forward bias voltage of $1{\sim}2V$. The relationship between the etch rate of the trench and the voltage of the forward bias is investigated and the dependence of the gap for the voltage also examined. The etch rate increase from 0.027 ${\mu}m/min$ to 0.031 ${\mu}m/min$ as the value of the applied voltage increase from 1V to 2V, but the the gap is kept constant value of 40 nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.7
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• pp.601-604
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• 2006

In this paper, we propose the single poly-Si Flash EEPROM device with a new structure which does not need the high voltage switching circuits. The device was designed, fabricated and characterized. From the measurement results, it was found that the program, the erase and the read operations worked properly. The threshold voltage was 3.1 V after the program in which the control gate and the drain were biased with 12 V and 7 V for $100{\mu}S$, respectively. And it was 0.4 V after the erase in which the control gate was grounded and the drain were biased with 11 V for $200{\mu}S$. On the other hand, it was found that the program and the erase speeds were significantly dependent on the capacitive coupling ratio between the control gate and the floating gate. The larger the capacitive coupling ratio, the higher the speeds, but the target the area per cell. The optimum structure of the cell should be chosen with the consideration of the trade-offs.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2005.11a
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• pp.81-86
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• 2005

In this paper, we present an efficiency extension of Doherty power amplifier using LDMOS FET devices with different peak output powers and an unequal power divider. The amplifier is designed by using a MRF21045 with P1 dB of 45 W as the main amplifier biased for Class-AB operation and a MRF21090 with P1 dB of 90 W as the peaking amplifier biased for Class-C operation. The input power is divided into a 1:1.5 power ratio between the main and peaking amplifier. The simulated results of the proposed Doherty amplifier shows an efficiency improvement of approximately 19 % in comparison to the class-AB amplifier at an output power of 42.5 dBm. The fabricated Doherty amplifier obtained a PAE of 33.68 % at 9 dB backed off from P1 dB of 51.5 dBm.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.8
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• pp.1527-1533
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• 2009

In this paper, we design directional search pattern using motion direction biased characteristics of MVP distribution, and proposes a direction applied cross diamond search method that adaptively change search pattern according to moving direction of search point. Proposed method predict motion vectors from neighbor macro blocks, and define initial motion direction by using predicted motion vectors. It improve search efficiency by using alternately proposed search pattern according to motion direction of BMP in search process. The simulation results show that proposed method is able to fast motion estimation compared with conventional cross diamond search, according as it reduce computational complexity that is required of motion estimation with $0.43%{\sim}1.76%$.