• Journal of Sensor Science and Technology
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• v.25 no.5
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• pp.333-336
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• 2016

In this study, a beta monitoring sensor was developed as a part of basic research for quantitative beta monitoring underwater, and its performance was evaluated using a calibration source. A beta detection sensor was manufactured by using SiPM(silicon photomultiplier) and $CaF_2$:Eu, YAG:Ce, YAP:Ce scintillator. A large-area light guide was introduced to improve beta-ray detection efficiency. As calibration sources, the Beta source $^{90}Sr$, which is the main fission product of a nuclear accident, and the gamma source $^{137}Cs$ are used. In the performance evaluation, it is confirmed that scintillator $CaF_2:Eu$ gives the highest beta-ray detection response. Compared to gamma ray, beta-ray detection responsivity and detection efficiency are verified. Therefore, this study is expected to contribute to basic research in the development of an underwater beta-ray monitoring system.

• Journal of the Korean institute of surface engineering
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• v.48 no.6
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• pp.303-308
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• 2015

Pd-functionalized ${\beta}-Bi_2O_3$ nanowires are synthesized by thermal evaporation of Bi powder using VLS mechanism followed by Pd coating and annealing. In this study, sensing properties of Pd-functionalized ${\beta}-Bi_2O_3$ nanowires sensor to selected concentrations of $NO_2$ gas were examined. Scanning electron microscopy showed that the nanowires with diameters in a range of 100 - 200 nm and lengths of up to a few tens of micrometers. Transmission electron microscopy and X-ray diffraction confirmed that the products corresponded to the nanowires of ${\beta}-Bi_2O_3$ crystals and Pd nanoparticles. Pd-functionalized ${\beta}-Bi_2O_3$ nanowires sensor showed an enhanced sensing performance to $NO_2$ gas compared to as-synthesized ${\beta}-Bi_2O_3$ nanowires sensor. As synthesized and Pd-functionalized ${\beta}-Bi_2O_3$ nanowire sensors showed responses of 178% - 338% and 196% - 535% at $300^{\circ}C$, respectively, to 0.05 - 2 ppm $NO_2$. In addition, the underlying mechanism of the enhancement of the sensing properties of ${\beta}-Bi_2O_3$ nanowires by Pd-functionalization is discussed.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.12 no.6
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• pp.619-628
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• 2019

In this paper, we designed a beta ray sensor for a true random number generator. Instead of biasing the gate of the PMOS feedback transistor to a DC voltage, the current flowing through the PMOS feedback transistor is mirrored through a current bias circuit designed to be insensitive to PVT fluctuations, thereby minimizing fluctuations in the signal voltage of the CSA. In addition, by using the constant current supplied by the BGR (Bandgap Reference) circuit, the signal voltage is charged to the VCOM voltage level, thereby reducing the change in charge time to enable high-speed sensing. The beta ray sensor designed with 0.18㎛ CMOS process shows that the minimum signal voltage and maximum signal voltage of the CSA circuit which are resulted from corner simulation are 205mV and 303mV, respectively. and the minimum and maximum widths of the pulses generated by comparing the output signal through the pulse shaper with the threshold voltage (VTHR) voltage of the comparator, were 0.592㎲ and 1.247㎲, respectively. resulting in high-speed detection of 100kHz. Thus, it is designed to count up to 100 kilo pulses per second.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.14 no.4
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• pp.338-347
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• 2021

In this paper, the beta-ray sensor circuit used in the true random number generator was designed using DB HiTek's 0.18㎛ CMOS process. The CSA circuit proposed a circuit having a function of selecting a PMOS feedback resistor and an NMOS feedback resistor, and a function of selecting a feedback capacitor of 50fF and 100fF. And for the pulse shaper circuit, a CR-RC2 pulse shaper circuit using a non-inverting amplifier was used. Since the OPAMP circuit used in this paper uses single power instead of dual power, we proposed a circuit in which the resistor of the CR circuit and one node of the capacitor of the RC circuit are connected to VCOM instead of GND. And since the output signal of the pulse shaper does not increase monotonically, even if the output signal of the comparator circuit generates multiple consecutive pulses, the monostable multivibrator circuit is used to prevent signal distortion. In addition, the CSA input terminal, VIN, and the beta-ray sensor output terminal are placed on the top and bottom of the silicon chip to reduce capacitive coupling noise between PCB traces.

• Composites Research
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• v.28 no.3
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• pp.75-80
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• 2015

Poly(vinylidene fluoride-trifluoroethylene; P(VDF-TrFE)) is one of the most promising electroactive polymers with numerous application potentials in many fields of industry. Because of its good electro-mechanical properties P(VDF-TrFE) has been used for a number of sensors and actuators and also can be used for monitoring composite structure behaviors as a sensor. Three different ways (Electrical poling, annealing-cooling, and pressing) to enhance ${\beta}$-phase of P(VDF-TrFE) film were carried out. A microscopic analysis was conducted using X-ray diffraction to investigate the effect of such treatments on piezoelectric properties of P(VDF-TrFE) film. From the results, poling, annealing-cooling, and pressing were all effective to enhance ${\beta}$ crystallinity of P(VDF-TrFE) film and the maximum increase rate was 62.80% from 45.29% of the control group.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.13 no.5
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• pp.403-411
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• 2020

Since the analog circuit of the beta ray sensor circuit for the true random number generator and the power and ground line used in the comparator circuit are shared with each other, the power generated by the digital switching of the comparator circuit and the voltage drop at the ground line was the cause of the decreasein the output signal voltage drop at the analog circuit including CSA (Charge Sensitive Amplifier). Therefore, in this paper, the output signal voltage of the analog circuit including the CSAcircuit is reduced by separating the power and ground line used in the comparator circuit, which is the source of digital switching noise, from the power and ground line of the analog circuit. In addition, in the voltage-to-voltage converter circuit that converts VREF (=1.195V) voltage to VREF_VCOM and VREF_VTHR voltage, there was a problem that the VREF_VCOM and VREF_VTHR voltages decrease because the driving current flowing through each current mirror varies due to channel length modulation effect at a high voltage VDD of 5.5V when the drain voltage of the PMOS current mirror is different when driving the IREF through the PMOS current mirror. Therefore, in this paper, since the PMOS diode is added to the PMOS current mirror of the voltage-to-voltage converter circuit, the voltages of VREF_VCOM and VREF_VTHR do not go down at a high voltage of 5.5V.

• Current Optics and Photonics
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• v.3 no.2
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• pp.154-163
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• 2019

In this study, we developed an optical sighting system capable of shooting at a long-distance target by operating a digital gyro mirror composed of a gyro sensor and an FSM. The optical sighting system consists of a reticle part, a digital gyro mirror (FSM), a parallax correction lens, a reticle-ray reflection mirror, and a partial reflection window. In order to obtain the optimal volume and to calculate the leading angle range according to the driving angle of the FSM, a calculation program using Euler rotation angles and a three-dimensional reflection matrix was developed. With this program we have confirmed that the horizontal leading angle of the developed optical sighting system can be implemented under about ${\pm}8^{\circ}$ for the maximum horizontal driving angle (${\beta}={\pm}12.5^{\circ}$) of the current FSM. Also, if the ${\beta}$ horizontal driving angle of the FSM is under about ${\pm}15.5^{\circ}$, it can be confirmed that the horizontal direction leading angle can be under ${\pm}10.0^{\circ}$. If diagonal leading angles are allowed, we confirmed that we can achieve a diagonal leading angle of ${\pm}10.0^{\circ}$ with a vertical driving angle ${\alpha}$ of ${\pm}7.1^{\circ}$ and horizontal driving angle ${\beta}$ of ${\pm}12.5^{\circ}$.

• Korean Journal of Optics and Photonics
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• v.20 no.4
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• pp.201-206
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• 2009

In this study, we have fabricated a fiber-optic radiation sensor for detection of tritium using inorganic scintillators and optical fibers. We have tested various kinds of inorganic scintillators such as $Gd_2O_2S$ : Tb, $Y_3Al_5O_{12}$ : Ce, and CsI : Tl to select the most effective sensor tip. In addition, we have measured the scintillating lights using a photomultiplier tube as a function of distance between sensor tips to the source with the different activities of hydride tritium. The final results are compared with those which are obtained using a surface activity monitor.

• Journal of Sensor Science and Technology
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• v.19 no.6
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• pp.443-448
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• 2010

In this work, the scintillation properties of CsI:Na crystal were investigated as radiation detection sensor. This scintillation material was grown by a 2-zone vertical Bridgman method. Under X-ray excitation the crystal shows a broad emission band between 280 nm and 690 nm wavelength range, peaking at 413 nm. Energy resolution for $^{137}Cs$ 662 keV $\gamma$-rays of the crystal was measured to be 6.9 %(FWHM). At room temperature, the crystal exhibits three exponential decay time components. The fast and major component of scintillation time profile of the crystal emission decays with a 457 ns time constant. Absolute light yield of the crystal was estimated to be 53,000 ph/MeV using LAAPD. The sample crystal shows proportionality of 30 % in the measured energy range from 31 to 1,333 keV. And the $\alpha/\beta$ ratio of the crystal was 0.14.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.11
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• pp.99-106
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• 2016

When radon is staying at alveoli and bronchial tubes, the collapse of radon creates progeny nuclides (alpha ray, beta ray, gamma ray, etc.). They emit radiation causing a mutation in the chromosome of the cell, resulting in lung cancer. In other words, the main cause of lung cancer is radiation emitting as the result of radon collapse rather than radon gas. The 82% of radiation exposed to people is the natural radiation. Most of the natural radiation is radon. If we properly control the concentration of radon indoors, the probability of occurrence of lung cancer could be decreases to be 70%. Until now, to measure the indoor radon concentration, imported radon sensors are needed. So, DB construction of indoor radon emission and popular radon measuring apparatus should be developed. In this paper, we propose the radon detecting method using PIN photodiode. Also, we confirmed the PIN photodiode could be used as radon sensor module through some experimental studies.