• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.321-327
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• 2001

Ti-Si-N films obtained by using RF reactive sputtering of targets with various Ti/Si ratios in a $N_2(Ar+N_2)$ gas mixture have been investigated in terms of films resistivity and diffusion barrier performance. The chemical bonding state of Si in the Ti-Si-N film which contained a higher Si content was in the form of amorphous $Si_3N_4$, producing increased film resistivity with increased $N_2$flow rate. Lowering the Si content in the deposited Ti-Si-N film favored the formation of crystalline TiN even at low $N_2$flow rates, and leads to low film resistivity. In addition increasing the N content led to Ti-Si-N films having a higher density and compressive stress, suggesting that the N content in the films appear to be one of the most important factors affecting the diffusion barrier characteristics. Consequently, we proposed the optimum composition in the range of 29~49 at.% of Ti, 6~20 at.% of Si, and 45~55 at.% of N for the Ti-Si-N films having both low resistivity and excellent diffusion barrier performance.

• Transactions of the Korean Society of Automotive Engineers
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• v.18 no.3
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• pp.149-155
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• 2010

Currently various safety tests are being performed in many countries with growing interest in vehicle safety. However the vehicles which have good safety performance in these tests could not secure the good performance in real car to car accident. So new test protocol using progressive deformable barrier (PDB) was proposed by EEVC in Europe, NHTSA in USA and some vehicle manufacturers, etc. The target of PDB test is to control partner protection in addition to self-protection on the same test. The proposal is to update current ECE R.94 frontal ODB test. So barrier, impact speed, overlap are changed to avoid bottoming-out in the test configuration. In this paper 3 different tests (R.94, EuroNCAP and PDB test) were carried out using current production vehicles with same structure. The results of these tests were compared to understand PDB test. As a result PDB test shows the highest vehicle deceleration and dummy injury because PDB offers a progressive increase in stiffness in depth and height. However vehicle intrusion was affected with rather test velocity than stiffness of deformable barrier. PDB deformation data is used for partner protection assessment using PDB software and it shows that the test vehicle is rather not aggressive.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.450-450
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• 2012

In recent days, advances in ZnO-based oxide semiconductor materials have accelerated the development of thin-film transistors (TFTs), which are the building blocks for active matrix flat-panel displays including liquid crystal displays (LCD) and organic light-emitting diodes (OLED). In particular, the development of high-mobility ZnO-based channel materials has been proven invaluable; thus, there have been many reports of high-performance TFTs with oxide semiconductor channels such as ZnO, InZnO (IZO), ZnSnO (ZTO), and InGaZnO (IGZO). The reliability of oxide TFTs can be improved by examining more stable oxide channel materials. In the present study, we investigated the effects of an ALD-deposited water vapor permeation barrier on the stability of ZnO and HfZnO (HZO) thin film transistors. The device without the water vapor barrier films showed a large turn-on voltage shift under negative bias temperature stress. On the other hand, the suitably protected device with the lowest water vapor transmission rate showed a dramatically improved device performance. As the value of the water vapor transmission rate of the barrier films was decreased, the turn-on voltage instability reduced. The results suggest that water vapor related traps are strongly related to the instability of ZnO and HfZnO TFTs and that a proper combination of water vapor permeation barriers plays an important role in suppressing the device instability.

• Journal of the Semiconductor & Display Technology
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• v.21 no.2
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• pp.123-126
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• 2022

We investigated deep levels in n-type 4H-SiC epitaxy layer of the Positive-Intrinsic-Negative diode and Schottky barrier diodes by using deep level transient spectroscopy. Despite the excellent performance of 4H-SiC, research on various deep level defects still requires a lot of research to improve device performance. In Positive-Intrinsic-Negative diode, two defects of 196K and 628K are observed more than Schottky barrier diode. This is related to the action of impurity atoms infiltrating or occupying the 4H-SiC lattice in the ion implantation process. The I-V characteristics of the Positive-Intrinsic-Negative diode shows about ~100 times lower the leakage current level than Schottky barrier diode due to the grid structures in Positive-Intrinsic-Negative. As a result of comparing the capacitance of devices diode and Schottky barrier diode devices, it can be seen that the capacitance value lowered if it exists the P implantation regions from C-V characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.6
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• pp.657-661
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• 2024

Gallium oxide (Ga₂O₃) is emerging as a next-generation power semiconductor material due to its excellent electrical properties, including an ultra-wide bandgap of approximately 4.8 eV and a breakdown electric field of about 7 MV/cm. However, its low thermal conductivity of around 0.13 W/cmK presents significant challenges to the performance and reliability of Ga₂O₃-based devices. In this study, we employed the Silvaco TCAD simulator to analyze the thermal and electrical characteristics of Ga₂O₃ Schottky barrier diodes (SBDs) with heat sinks of varying thermal conductivities. The results demonstrate that heat sinks with higher thermal conductivity effectively mitigate the temperature rise in the device, leading to an increase in current density. The limitation in heat dissipation due to parasitic on-state resistance not only affects device performance but also impacts long-term reliability. Therefore, this study contributes to the development of effective thermal management strategies for Ga₂O₃-based power semiconductors.

• Journal of the Korean Society of Visualization
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• v.15 no.2
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• pp.59-67
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• 2017

To verify floatability of ABB (Air bubble barrier), we compared bubble swarm behavior with and without the air-driven ejector. Experiment was conducted using the fabricated air-driven ejector with 5 mm nozzle on the bottom of 1 m3 water tank. Reynolds number of air in the nozzle was ranged 1766-13248. We analyzed data with statistical method using image processing, particle mage velocimetry (PIV) and proper orthogonal decomposition (POD) analysis. As a result of POD analysis, there was no significant eigenmode in bubbly flow generated from the ejector. It means that more complex turbulent flows were formed by the ejector, thereby (1) making bubbles finer, (2) promoting three-dimensional energy transfer between bubble and water, and (3) making evenly distributed velocity profile of water. It is concluded that the air-driven ejector could enhance the performance of ABB.

• Journal of the Korean Society for Precision Engineering
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• v.26 no.3
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• pp.122-128
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• 2009

DBD(Dielectric Barrier Discharges) plasma is often used to clean the surface of semiconductor. The cleaning performance is affected mainly by plasma density and duration time. In this study, the plasma density is predicted by coupled simulation of flow, chemistry mixing and reaction, plasma, and electric field. 13.56 MHz of RF source is used to generate plasma. The effect of dielectric thickness, gap distance, and flow velocity on plasma density is investigated. It is shown that the plasma density increases as the dielectric thickness decreases and the gap distance increases.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2007.05a
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• pp.1053-1056
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• 2007

The acoustical performance of noise reducing devices installed on the top of a noise barrier were tested by small-scale outdoor tests. Noise measurements before and after installation of the devices were carried out using sound intensity methods. It is well known that the sound intensity method can specify the strength and directivity of sound, and it is convenient to consider the feature of sound around a noise barrier. The noise reduction effect of each edge device was evaluated using the difference between the input and output sound power levels calculated from sound intensities. It was investigated that each device had different efficiency in the shadow zone, while there was no significant difference between edge devices in the illuminated zone.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1130-1135
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• 2003

The need to increase the reliability of a structural system has been significantly brought in the procedure of real designs to consider, for instance, the material properties or geometric dimensions that reveal a random or incompletely known nature. Reliability based design optimization of a real system now becomes an emerging technique to achieve reliability, robustness and safety of these problems. Finite element analysis program and the reliability analysis program are necessary to evaluate the responses and the probabilities of failure of the system, respectively. Moreover, integration of these programs is required during the procedure of reliability based design optimization. It is well known that reliability based design optimization can often have so many local minima that it cannot converge to the specified probability of failure. To overcome this problem, barrier function method in reliability based design optimization is suggested. To illustrate the proposed formulation, reliability based design optimization of a bracket is performed. AMV and FORM are employed for reliability analysis and their optimization results are compared based on the accuracy and efficiency.

• Journal of the Korean Society for Precision Engineering
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• v.28 no.10
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• pp.1217-1223
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• 2011

In this paper, the dielectric barrier discharge plasma generator has been studied for producing of the high concentration ozone gas. Proposed plasma generator has the structure of extremely narrow discharge air gap(0.15mm) in order to realize the high electric field discharge. We investigate the performance of the dielectric barrier discharge plasma generator experimentally and the results show that the generator has very high ozone concentration characteristics of 13.7[wt%/$O_2$] at the oxygen flow rate of 1[${\ell}$/min] of each discharge cell. So, we confirmed that the proposed plasma generator is suitable for the high concentration ozone production facility of the eco-friendly ozone functional water cleaning system in the electronic components cleaning process.