• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1270-1271
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• 2008

Effects of thin ZnO/Mg interlayers on electrical and optical properties between p-GaN and ITO were characterized for its application to GaN-LEDs. The ZnO and Mg layers were deposited to have various thicknesses (1${\sim}$6nm for ZnO and 1${\sim}$2nm for Mg) by sputtering. After RTA process, the atomic migration between Mg and ZnO and the formation of Ga vacancy were observed from SIMS depth profile, resulting in the increase of hole concentration and the reduction of band bending at the surface region of p-GaN. The sample using ZnO(2nm)/Mg(2nm) interlayer produced the lowest contact resistance with SBH(Schottky barrier height) of 0.576 eV and the transmittance higher than 83% at a wavelength of 460nm when annealed at 500$^{\circ}C$ for 3min in air ambient.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.319.2-319.2
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• 2014

휴대기기 발전과 사용 증가로 인해 배터리의 고용량화와 소형화가 요구되고 있으며, 특히 의료용 센서 기기 같은 health care device에서 소형화에 대한 관심이 증가하였다. 박막 이차 전지는 박막형태로 배터리의 구성요소를 한층씩 쌓아 올린 형태이므로 소형화가 가능하며, 내부에 액체전해질이 없어 누액으로 인한 폭발등의 염려가 없다. 또한 Si 반도체 소자에 integration 할 수 있어 다양한 분야에 적용할 수 있다. 하지만 Si 소자에 integration시 리튬이 기판으로 확산되어 배터리 용량이 감소하거나 Si 소자에 악영향을 미칠 수 있다. 따라서 본 연구에서는 리튬의 확산 여부를 민감하게 평가할 수 있는 방법 및 리튬 확산을 억제할 수 있는 확산방지막에 대한 연구를 진행하였다. 리튬의 확산을 평가하는 방법으로는 물리적 분석 방법 및 전기적 분석 방법을 평가하여 가장 민감한 방법을 선정하였다. 또한 확산방지막으로는 반도체 배선공정에서 Cu 확산 방지막으로 사용되고 있는 Ta, TaN 등과 함께 Na 확산 방지막으로 알려진 $Al_2O_3$ [1]등을 평가하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.267-268
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• 2005

In this paper, the inorganic-organic thin film encapsulation layer was newly adopted to protect the organic layer from moisture and oxygen. Using the electron beam, Sputter and Spin-Coater system, the various kinds of inorganic and organic thin-films were deposited onto the Ethylene Terephthalate(PET) and their interface properties between organic and inorganic layer were investigated. In this investigation, the SiON and Polyimide(PI) layer showed the most suitable properties. Under these conditions, the WVTR(water vapour transition rate) for PET can be reduced from level of 0.57 g/$m^2$/day (bare subtrate) to $1{\times}10^{-5}$ /$m^2$/day after application of a SiON and Polyimide layer. These results indicates that the SiON/PI/SiON/PI/PET barrier coatings have high potential for flexible organic light-emitting diode(OLED) applications.

• Journal of Korean Vacuum Science & Technology
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• 제5권2호
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• pp.47-51
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• 2001

To obtain high remnant polarization and good crystalinity of ferroelectric thin films in non-volatile memory devices, the high temperature treatment in oxygen ambient is inevitable. Severe problems that occur in this process are oxygen diffusion into substrate, oxidation of electrode and buffer layer, degradation of microstructure and so on. We made ruthenium dioxide thin film by reactive sputtering with oxygen and argon mixture atmosphere. Comparing quantitatively the core-level spectra of Ru and RuO$_2$ obtained by x-ray photoelectron spectroscopy(XPS), we found that chemical state of RuO$_2$ is very stable and of good resistance to oxygen diffusion and oxidation of adjacent layers. It opens the use of RuO$_2$ thin film as a multifunctional layer of good conducting electrode and resistive barrier for the diffusion and the oxidation. We also suggest a correct understanding of Ru 3d core-level spectrum for RuO$_2$ based on the scheme of final state screening and charge transfer satellites.

• 정보저장시스템학회:학술대회논문집
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• 정보저장시스템학회 2005년도 추계학술대회 논문집
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• pp.254-259
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• 2005

In this study, measurement of thermal conductivity of multilayer thin dielectric film has been conducted via differential 3$\omega$ method. Also, verification of differential 3$\omega$ method has been accomplished with various proposed criteria. The target film for measurement is 300 nm silicon dioxide and this thin film is covered with various thicknesses of upper protective layer. The upper protective layer is inserted between the target film and the heater line for purpose of electrical insulator or anti-oxidation barrier since the target film may be a good electrical conductor or a well-oxidizing material. However, the verification of differential 3$\omega$ method has not been conducted. Thus we have shown that the measurement of thermal conductivity of thin films with upper protective layer via differential 3$\omega$ method is verified to be reliable as long as the proposed preconditions are satisfied. Experimental results show that the experimental errors tend to increase with aspect ratio between upper protective layer thickness and width of the heater line due to heat spreading effect.

• 한국전기전자재료학회논문지
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• 제19권8호
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• pp.754-757
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• 2006

The inorganic multi-layer thin film encapsulation was newly adopted to protect the organic layer from moisture and oxygen. Using the electron beam, sputter, inorganic multi-layer thin-film encapsulation was deposited onto the Polyethylene Terephthalate (PET) and their interface properties between inorganic and organic layer were investigated. In this investigation, the SiON, $SiO_2$ and parylene layer showed the most suitable properties. Under these conditions, the WVTR for PET can be reduced from level of $0.57g/m^2/day$ (bare subtrate) to $1*10^{-5}g/m^2/day$ after application of a SiON and $SiO_2$ layer. These results indicates that the $PET/SiO_2/SiON/Parylene$ barrier coatings have high potential for flexible organic light-emitting diode(OLED) applications.

• 한국전기전자재료학회논문지
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• 제28권1호
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• pp.7-11
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• 2015

In this study, $Si_3N_4$/SnZnO/AZO/Ag/Ti/ITO multi-layer film were prepared on glass substrate by DC/RF magnetron sputtering method. To prevent interfacial reaction between Ag and ITO layer, Ti buffer layer was inserted. Optical properties and sheet resistance were studied depending on laminating times of each multi-layered film especially in visible ray. The simulation program, EMP (essential macleod program), was adopted and compared with experimental data to expect the experimental result. It was found out that the transmittance of the first stacked $Si_3N_4$/SnZnO/AZO/Ag/Ti/ITO multi-layer film was more than 90%. However, with increasing stacking times, the optical properties of $Si_3N_4$/SnZnO/AZO/Ag/Ti/ITO multi-layer film get worse. Consequently, Ti layer is good for oxidation barrier, but too many uses of this layer may have an adverse effect to optical properties of TCO film.

• 태양에너지
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• 제19권3호
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• pp.125-131
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• 1999

This paper deals with a novel structure of poly-Si solar cell. A grain boundary(GB) of poly-Si acts as potential barrier and recombination center for photo-generated carriers. To reduce unwanted side effects at the GB of poly-Si, we employed physical GB removal of poly-Si using chemical solutions. Various chemical etchants such as Sirtl, Yang, Secco, and Schimmel were investigated for the preferential GB etching. Etch depth about 10 ${\mu}m$ was achieved by a Schimmel etchant. After a chemical etching of poly-Si, we used $POCl_3$ for emitter junction formation. This paper used an easy method of top electrode formation using a RF sputter grown ITO film. ITO films with thickness of 300 nm showed resistivity of $1.26{\times}10^{-4}{\Omega}-cm$ and overall transmittance above 80%. Using a preferential GB etching and ITO top electrode, we developed a new fabrication procedure of poly-Si solar cells. Employing optimized process conditions, we were able to achieve conversion efficiency as high as 16.6% at an input power of 20 $mW/cm^2$. This paper investigates the effects of process parameters: etching conditions, ITO deposition factors, and emitter doping densities in a poly-Si cell fabrication procedure.

• 대한기계학회논문집A
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• 제31권6호
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• pp.665-670
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• 2007

Alpha-phase alumina TGO(Thermally Grown Oxide) forms on the interface between zirconia top coat and bond coat of thermal barrier coating system for superalloys during exposure to high temperature over $1000^{\circ}C$. It is known to provide a good protection against hot corrosion and to cause surface failure such as rumpling and cracking due to difference in thermal expansion coefficient from the substrate metal and the lateral growth. Consequently, mechanical properties of the alumina TGO at the high temperature are the key parameters determining the integrity of TBC system. In this work, by using Fecralloy foils as the alumina forming substrate, creep tests and tensile tests have been performed with various TGO thicknesses$(h=0{\sim}4{\mu}m)$ and yttrium contents(0, 200ppm) at $1200^{\circ}C$. Displacement-time curves and load-displacement curves for each TGO thickness(h=1,2,..) were measured from the creep and tensile tests, respectively, and compared with the curves without TGO thickness(h=0). As the result, the intrinsic tensile and creep properties of TGO itself were determined.

• Bulletin of the Korean Chemical Society
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• 제31권12호
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• pp.3579-3582
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• 2010

We studied the reaction of tri-methylaluminum (TMA) on hydroxyl (OH)-terminated Si (001) surfaces for the initial growth of aluminum oxide thin-films using density functional theory. TMA was adsorbed on the oxygen atom of OH due to the oxygen atom’s lone pair electrons. The adsorbed TMA reacted with the hydrogen atom of OH to produce a di-methylaluminum group (DMA) and methane with an energy barrier of 0.50 eV. Low energy barriers in the range of 0 - 0.11 eV were required for DMA migration to the inter-dimer, intra-dimer, and inter-row sites on the surface. A unimethylaluminum group (UMA) was generated at each site with low energy barriers in the range of 0.21 - 0.25 eV. Among the three sites, the inter-dimer site was the most probable for UMA formation.