대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

GaN-LED용 투명전도막에 대한 연구

A study on transparent conducting films for GaN-based light emitting diodes

  • 이강영 (한양대학교 전자전기제어계측공학과) ;
  • 김원 (한양대학교 전자전기제어계측공학과) ;
  • 엄현석 (한양대학교 전자전기제어계측공학과) ;
  • 김은규 (우리 LST 주식회사) ;
  • 김면성 (우리 LST 주식회사) ;
  • 박진석 (한양대학교 전자전기제어계측공학과)
  • Lee, Kang-Young (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
  • Kim, Won (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
  • Uhm, Hyun-Seok (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
  • Kim, Eun-Kyu (Wooree LST Co., LTD.) ;
  • Kim, Myun-Sung (Wooree LST Co., LTD.) ;
  • Park, Jin-Seok (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University)
  • 발행 : 2008.07.16
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초록

Effects of thin ZnO/Mg interlayers on electrical and optical properties between p-GaN and ITO were characterized for its application to GaN-LEDs. The ZnO and Mg layers were deposited to have various thicknesses (1${\sim}$6nm for ZnO and 1${\sim}$2nm for Mg) by sputtering. After RTA process, the atomic migration between Mg and ZnO and the formation of Ga vacancy were observed from SIMS depth profile, resulting in the increase of hole concentration and the reduction of band bending at the surface region of p-GaN. The sample using ZnO(2nm)/Mg(2nm) interlayer produced the lowest contact resistance with SBH(Schottky barrier height) of 0.576 eV and the transmittance higher than 83% at a wavelength of 460nm when annealed at 500$^{\circ}C$ for 3min in air ambient.

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