• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.3
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• pp.376-379
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• 2014

In this paper, we designed more improving a dual-band power amplifier than the transceiver of RFID reader that operates at 910 MHz and 2.45 GHz. A dual-band power amplifier has two circuits. One matching circuit is composed lumped element in the band of 910 MHz. The other matching circuit using distributed element in the high band of 2.45 GHz. So, this dual-band power amplifier works as Band Rejection Filter in the band of 910 MHz but in the high band of 2.45 GHz works as Band Pass Filter. Therefore, this is composed a microstrip transmission line. A power amplifier is showed gains of 8 dB output power at 910 MHz and 1.5 dB output power at 2.45 GHz. If input power is 10 dBm, both of bands output 20 dBm.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2006.05a
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• pp.615-618
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• 2006

The broadband power detector for direct- onversion Six-port output circuit was designed and implementaed in this paper. The power detector should linearly operated to produce the linear amplitude and phase signal fer input RF signal in required broadband. So, the power detector should be designed under conditions of matching circuit with low VSWR. The designed power detectors, which were implemented in L-band with 50 ohm matching and Ku-band with matching circuit and isolator, respectively, were evaluated in the performances.

• Journal of electromagnetic engineering and science
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• v.15 no.4
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• pp.232-238
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• 2015

This work describes the development of a D-band (110-170 GHz) signal source based on a SiGe BiCMOS technology. This D-band signal source consists of a V-band (50-75 GHz) oscillator, a V-band amplifier, and a D-band frequency doubler. The V-band signal from the oscillator is amplified for power boost, and then the frequency is doubled for D-band signal generation. The V-band oscillator showed an output power of 2.7 dBm at 67.3 GHz. Including a buffer stage, it had a DC power consumption of 145 mW. The peak gain of the V-band amplifier was 10.9 dB, which was achieved at 64.0 GHz and consumed 110 mW of DC power. The active frequency doubler consumed 60 mW for D-band signal generation. The integrated D-band source exhibited a measured output oscillation frequency of 133.2 GHz with an output power of 3.1 dBm and a phase noise of -107.2 dBc/Hz at 10 MHz offset. The chip size is $900{\times}1,890{\mu}m^2$, including RF and DC pads.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.23 no.7
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• pp.807-815
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• 2019

In this paper, we design a power amplifier to support quad-band in wireless communication devices using RF CMOS 180-nm process. The proposed power amplifier consists of low-band 0.9, 1.8, and 2.4 GHz and high-band 5 GHz. We proposed a structure that can support each input matching network without using a switch. For maximum linear output power, the output matching network was designed for impedance conversion to the power matching point. The fabricated quad-band power amplifier was verified using modulation signals. The long-term evolution(LTE) 10 MHz modulated signal was used for 0.9 and 1.8 GHz, and the measured output power is 23.55 and 24.23 dBm, respectively. The LTE 20 MHz modulated signal was used for 1.8 GHz, and the measured output power is 22.24 dBm. The wireless local area network(WLAN) 802.11n modulated signal was used for 2.4 GHz and 5.0 GHz. We obtain maximum linear output power of 20.58 dBm at 2.4 GHz and 17.7 dBm at 5.0 GHz.

• ETRI Journal
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• v.31 no.3
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• pp.247-253
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• 2009

We propose a Ku-band driver and high-power amplifier monolithic microwave integrated circuits (MMICs) employing a compensating gate bias circuit using a commercial 0.5 ${\mu}m$ GaAs pHEMT technology. The integrated gate bias circuit provides compensation for the threshold voltage and temperature variations as well as independence of the supply voltage variations. A fabricated two-stage Ku-band driver amplifier MMIC exhibits a typical output power of 30.5 dBm and power-added efficiency (PAE) of 37% over a 13.5 GHz to 15.0 GHz frequency band, while a fabricated three-stage Ku-band high-power amplifier MMIC exhibits a maximum saturated output power of 39.25 dBm (8.4 W) and PAE of 22.7% at 14.5 GHz.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.5A
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• pp.484-491
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• 2004

C-band pumping effect appears in L-band EDFA because the absorption in C-band occurs dominant under the condition of such a low average population inversion. In this paper, we show how the C-band pumping effect depends on 980nm pump power, the C-band wavelength, and its input power. The C-band pumping is caused by absorbing C-band injection or backward spontaneous emission power through EDF. If the same small signal condition is given by a C-band pump, the C-band pump of a long wavelength is good for the saturation and noise characteristics of L-band signal. Finally, it is considered that in the aspect of saturation characteristics, C-band compensation is not so much efficient as L-band in Gain-Clamped L-band EDFA having a lossy resonator.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.1
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• pp.65-68
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• 2004

The performances of millimeter wave Power amplifier have been improved by using PBG (photonic bandgap structure) in this paper. The PBG structure has been optimized to obtain the lowpass characteristics in Ka band and employed at output port of Ka band power amplifier. The harmonics of the power amplifier have been suppressed by the PBG of output port and the proposed PBG has suppressed the second harmonic to 40dBc around 50 GHz. The improvements of IMD and PAE of the amplifier employing the PBG structure are obtained $15\%$ and $25\%$, compared with those of the conventional Ka band power amplifier, respectively.

• Journal of the Korean Society of Safety
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• v.25 no.3
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• pp.123-130
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• 2010

Electroencephalogram(EEG) would be the most objective psychophysiological research technique on human errors though few research has been taken yet. This study aimed to get characteristics of human error while committing simple Odd-Ball tasks by utilizing the power spectrum technique of EEG data. Each experiment was composed of 3 tasks with different rules, and 8 young undergraduate students participated in this study as paid subjects. The result showed in the affirmative that subject and the interaction of subject and task factors were statistically significant on variation of $\alpha$ band power $P_{\alpha/(\alpha+\beta+\theta)}$ and $\beta$ band power $P_{\beta/(\alpha+\beta+\theta)}$, and that the former increasing in backward direction to Pz reflects compatibility whereas the latter increasing in forward direction to Fz reflects familiarity. Therefore it was coucluded that, since task 2 carried out in the present research requiring decoding process would be more difficult to human beings than the task merely requiring psychological recall process, task 1 and task 3 were classified into a homogenious group excluding task 2, and the ratio $\alpha$ band power to $\beta$ band power indicated enormous increase of $\alpha$ band power relative to $\beta$ band power in the cases of contra-lateral errors, especially in task 2.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.175-181
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• 2006

Wide band-gap semiconductor electron devices have made great progresses to produce very high power amplifiers for various wireless standards. The advantages of wide band-gap electronic devices and their progresses are summarized in this paper.

• Journal of electromagnetic engineering and science
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• v.6 no.2
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• pp.98-102
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• 2006

In this paper, we have designed and fabricated the high power amplifier employing PBG(Photonic Band-Gap Structure) to improve the linearity of the amplifier in the millimeter wave band. The fabricated amplifier using MMIC(TGA1073G) has operated about 24 GHz band and the PBG has resulted in 35 dB suppression about 49 GHz where the second harmonic occurs due to the amplifier. As a result, the output power has been 24.43 dBm and 13.2 dBc of the IMD has been improved. Also, the PAE is obtained to 14.96 % of the amplifier employing the PBG structure in Ka band.