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http://dx.doi.org/10.6109/jkiice.2019.23.7.807

Quad-Band RF CMOS Power Amplifier for Wireless Communications  

Lee, Milim (School of Electronic Engineering, Soongsil University)
Yang, Junhyuk (School of Electronic Engineering, Soongsil University)
Park, Changkun (School of Electronic Engineering, Soongsil University)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.23, no.7, 2019 , pp. 807-815 More about this Journal
Abstract
In this paper, we design a power amplifier to support quad-band in wireless communication devices using RF CMOS 180-nm process. The proposed power amplifier consists of low-band 0.9, 1.8, and 2.4 GHz and high-band 5 GHz. We proposed a structure that can support each input matching network without using a switch. For maximum linear output power, the output matching network was designed for impedance conversion to the power matching point. The fabricated quad-band power amplifier was verified using modulation signals. The long-term evolution(LTE) 10 MHz modulated signal was used for 0.9 and 1.8 GHz, and the measured output power is 23.55 and 24.23 dBm, respectively. The LTE 20 MHz modulated signal was used for 1.8 GHz, and the measured output power is 22.24 dBm. The wireless local area network(WLAN) 802.11n modulated signal was used for 2.4 GHz and 5.0 GHz. We obtain maximum linear output power of 20.58 dBm at 2.4 GHz and 17.7 dBm at 5.0 GHz.
Keywords
LTE; WLAN; Matching Network; Power Amplifier; Quad-Band;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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