• Journal of IKEEE
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• v.22 no.4
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• pp.1202-1205
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• 2018

In this paper, we proposed ggNMOS based on 4H-SiC material and analyzed its electrical characteristics. 4H-SiC is a wide band-gap meterial, which is superior in area contrast and high voltage characteristics to Si material, and is attracting attention in the power semiconductor field. The proposed device has high robustness and strong snapback characteristics. The process consisted of SiC process and electrical characteristics were analyzed by TLP measurement equipment.

• Journal of electromagnetic engineering and science
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• v.12 no.1
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• pp.101-106
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• 2012

In this study, we investigated the effect of groove pattern and gap-fill with lossy materials at 15 GHz frequency of Ku-band. We used Epoxy/MWCNT composite materials as gap-fill materials. Although epoxy does not have an absorbance capability, epoxy added conductive fillers, which are multi-walled carbon nanotubes (MWCNT), can function as radar absorbing material. Specimens were fabricated with different MWCNT mass fractions (0, 0.5, 1.0, 2.0 wt%) and their permittivity in the Ku-band was measured using the waveguide technique. We investigated the effect of gap-fill on monostatic RCS by calculating RCS with and without gap-fill. For arbitrarily chosen thickness and experimentally obtained relative permittivity, we chose the relative permittivity of MWCNT at 2 wt% (${\varepsilon}_r$=8.8-j2.4), which was the lowest reflection coefficient for given thickness of 3.3 mm at V-pol. and $80^{\circ}$ incident angle. We also checked the monostatic RCS and the field intensity inside the groove channel. In the case of H-pol, gap-fill was not affected by the monostatic RCS and magnitude was similar with or without gap-fill. However, in the case of V-pol, gap-fill effectively reduced the monostatic RCS. The field intensity inside the groove channel reveals that different RCS behaviors depend on the wave polarizations.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.3
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• pp.329-338
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• 2001

In this paper, we designed microstrip patch antenna to enhance the weak point of general microstrip patch antenna that has narrow bandwidth and analyzed that. To reduce reactance in probe feed antenna, capacitive gap added to the patch. Using single patch and auxiliary wire, makes dual frequency resonant. So bandwidth is improved and gain also becomes higher. To verify with experiment, PCS band antenna is designed, fabricated. For PCS band antenna, bandwidth is 180 MHz in VSWR<1.5 and gain is 8.6 dBi.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.3
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• pp.304-310
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• 2008

Generally U-slotted patch antenna with PEC(Perfect Electric Conductor) ground plane is used for mobile telecommunication. However the improvement of the bandwidth is required to enlarge the capability of mobile telecommunication, In this paper, U-slotted patch antenna with EBG(Electromagnetic Band-Gap) ground plane is proposed to enlarge thr bandwidth and its radiation characteristics are investigated. To conform the bandwidth improvement, two kinds of U-slotted patch antennas with EBG and PEC ground plane are designed, fabricated, and radiation characteristics are measured. It is shown that the proposed antenna is wider than U-slotted patch antenna with PEC ground plane in bandwidth.

• Bulletin of the Korean Chemical Society
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• v.30 no.7
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• pp.1611-1615
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• 2009

We designed new anthracene-based host material to increase color purity as well as device efficiency. The new blue host, 9,10-bis(2,4-dimethylphenyl)anthracene (BDA), has highly twisted structure and wide band gap due to ortho interaction between anthracene and introduced 2,4-dimethylphenyl substituents. BDA exhibited deep blue fluorescence in solution (${\lambda}_{max}$ = 410 nm) and in solid state (${\lambda}_{max}$ = 429 nm), respectively, with the wide optical band gap (E = 3.12 eV). Blue-light-emitting OLEDs using obtained host and 2% Flu-DPAN as emitter showed 8 cd/A of high efficiency as well as high color purity [CIE coordinates = (0.15, 015)].

• Applied Chemistry for Engineering
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• v.20 no.3
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• pp.273-278
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• 2009

A series of poly[2-(2,6-dimethylpyran-4-ylidene)malononitrile-alt-1,4-bis(dodecyloxy)-2,5-divinylbenzene] (PM-PPV), poly[2-{2,6-Bis-[2-(5-bromothiophen-2-yl)-vinyl]-pyran-4-ylidene}-malononitrile-alt-1,4-bis(dodecyloxy)-2,5-divinylbenzene] (PMT-PPV) and poly[2-[2,6-Bis-(2-{4-[(4-bromophenyl)-phenylamino]-phenyl}-vinyl)-pyran-4-ylidene]-malononitrile-alt-1,4-bis(dodecyloxy)-2,5-divinylbenzene] (PMTPA-PPV) were synthesized by the Heck coupling reaction. The band gap of PM-PPV, PMT-PPV and PMTPA-PPV were 2.18 eV, 1.90 eV and 2.07 eV, respectively. The LUMO energy levels of PM-PPV, PMT-PPV and PMTPA-PPV were 3.65 eV, 3.54 eV and 3.62 eV, respectively and the HOMO energy levels of those were 5.83 eV, 5.61 eV and 5.52 eV, respectively. The photovoltaic devices based on the polymers was fabricated. The efficiency of the solar cells based on PM-PPV, PMT-PPV and PMTPA-PPV were 0.028%, 0.031% and 0.11%, respectively and the open circuit voltage (Voc) was 0.59 V~0.69 V under AM 1.5 G and 1 sun condition ($100mA/cm^2$).

• Current Photovoltaic Research
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• v.2 no.2
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• pp.41-47
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• 2014

Extensive investigation on silicon based thin film reveals a wide range of film characteristics, from low optical gap to high optical gap, from amorphous to micro-crystalline silicon etc. Fabrication of single junction, tandem and triple junction solar cell with suitable materials, indicate that fabrication of solar cell of a relatively moderate efficiency is possible with a better light induced stability. Due to these investigations, various competing materials like wide band gap silicon carbide and silicon oxide, low band gap micro-crystalline silicon and silicon germanium etc were also prepared and applied to the solar cells. Such a multi-junction solar cell can be a technologically promising photo-voltaic device, as the external quantum efficiency of such a cell covers a wider spectral range.

• Carbon letters
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• v.9 no.2
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• pp.131-136
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• 2008

In order to investigate the effect of doping C, N, B and F elements on $TiO_2$ for reducing the band gap, the heat treatment of $TiO_2$ was carried out with tetraethylammonium tetrafluoroborate. Through XRD and XPS analysis, the C, N, B and F doped anatase $TiO_2$ was confirmed. According to the increase of temperature during treatment, the particle size was increased due to aggregation of $TiO_2$ with elements (B, C, N and F). To investigate the capacity of photocatalyst for degradation of dye under solar light, the degradation of acridine orange and methylene blue was conducted. The degradation of dyes was carried out successfully under solar light indicating the effect of doping elements (B, C, N and F) on $TiO_2$ for reducing the band gap effectively.

• Journal of the Korean Ceramic Society
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• v.48 no.2
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• pp.200-204
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• 2011

Increase of surface area and decrease of band gap in $TiO_2$ semiconductors are significant to improve the efficiency of water splitting by photoelectrolysis. In this study $TiO_2$ nanotube arrays with ~7 um length and ~100 nm diameter were fabricated by an anodizing technique of titanium foils using DMSO (dimethyl sulfoxide)-based electrolytes. Then to control the band gap of the $TiO_2$ arrays, they were annealed at $550^{\circ}C$ for up to 180 min in $NH_3$ gas ambient. The samples annealed in $NH_3$ gas for 30 min and 60 min showed superior photo-conversion efficiency for water splitting under white and visible light. A $TiO_2$ nanotube annealed in $NH_3$ gas ambient for a period longer than 120 min showed 1 order higher leakage current. It is believed that the decrease of band gap and increase of conductivity in $TiO_2$ nanotube arrays due to $NH_3$ gas treatments result in the superior water-splitting performance.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.10
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• pp.945-948
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• 2016

Recent premium smartphones commonly employ a metal frame and this trend is currently spreading over mid-range smartphones. However, the metal frame becomes a good coupling path of electromagnetic noises emitted from digital components in smartphones and then increases radio-frequency interference(RFI) to RF antennas located at top and bottom sides of smartphones. This paper proposed a metal frame with EBG(Electromagnetic Band Gap) structure to reduce the noise coupling to antenna by suppressing surface wave on the metal frame. By simulation, it is confirmed that the proposed metal frame with $7{\times}6$ mushroom-type EBG array pattern with multi-via can reduce the noise coupling to RF antenna by about 20 dB.