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A study on ESD Protection circuit based on 4H-SiC MOSFET

4H-SiC MOSFET기반 ESD보호회로에 관한 연구

  • Seo, Jeong-Ju (Dept. of Electronics Engineering, DanKook Unversity) ;
  • Do, Kyoung-Il (Dept. of Electronics Engineering, DanKook Unversity) ;
  • Seo, Jeong-Ju (Dept. of Electronics Engineering, DanKook Unversity) ;
  • Kwon, Sang-Wook (Dept. of Electronics Engineering, DanKook Unversity) ;
  • Koo, Yong-Seo (Dept. of Electronics Engineering, DanKook Unversity)
  • Received : 2018.12.10
  • Accepted : 2018.12.24
  • Published : 2018.12.31

Abstract

In this paper, we proposed ggNMOS based on 4H-SiC material and analyzed its electrical characteristics. 4H-SiC is a wide band-gap meterial, which is superior in area contrast and high voltage characteristics to Si material, and is attracting attention in the power semiconductor field. The proposed device has high robustness and strong snapback characteristics. The process consisted of SiC process and electrical characteristics were analyzed by TLP measurement equipment.

본 논문에서는 4H-SiC물질 기반으로 제작된 ggNMOS를 제안하고 전기적 특성을 분석하였다. 4H-SiC는 Wide Band-gap 물질로 Si 물질 보다 면적대비 특성과 고전압 특성이 뛰어나 전력반도체 분야에 주목받고 있다. 제안된 소자는 높은 감내 특성과 Strong snapback 특성을 가진다. 공정은 SiC 공정으로 이루어 졌으며 TLP 측정 장비를 통해 전기적 특성을 분석하였다.

Keywords

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Fig. 1. Cross sectional view of 4H-SiC ggNMOS. 그림 1. 4H-SiC ggNMOS의 단면도

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Fig. 2. Equivalent circuit of 4H-SiC ggNMOS. 그림 2. 4H-SiC ggNMOS의 등가회로

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Fig. 3. I-V Curve of 4H-SiC ggNMOS. 그림 3. 4H-SiC ggNMOS의 I-V 특성

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Fig. 4. Variation of 4H-SiC ggNMOS. 그림 4. 4H-SiC ggNMOS의 설계변수

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Fig. 5. I-V Curve of 4H-SiC ggNMOS with DCGS variation. 그림 5. 설계변수 DCGS에 따른 4H-SiC ggNMOS의 I-V 특성

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Fig. 6. I-V Curve of 4H-SiC ggNMOS with Gate Length variation. 그림 6. 설계변수 Gate Length에 따른 4H-SiC ggNMOS의 I-V 특성

Table 1. Electrical characteristic with DCGS variation. 표 1. DCGS 변수에 따른 전기적 특성

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Table 2. Electrical characteristic with Gate Length variation. 표 2. Gate Length 변수에 따른 전기적 특성

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References

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