• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.1022-1025
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• 2002

This paper presents the reliability of planar InP/InGaAs avalanche photodiodes (APD's) with recess etching, which is very crucial for the commercial 10-Gb/s optical receiver application. A versatile design for the planar InP/InGaAs APD's and bias-temperature tests to evaluate long-term reliability at temperature from 200 to $250^{\circ}C$. The reliability is examined by accelerated life tests by monitoring dark current and breakdown voltage. The lifetime of the APD's is estimated by a degradation activation energy. Based on the test results, it is concluded that the planar InP/InGaAs APD's with recess etching shows the sufficient reliability for practical 10-Gb/s optical receivers.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.33 no.3
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• pp.106-111
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• 1984

Prebreakdown current pulses arising from avalanche growth in SF6 were recorded under static uniform field at pressures up to about 400kpa. At pressures less than 100kpa the current pulses consist of the electron component observed as the fast rise of current, the negative ioncomponent which is superimposed, and the positive ion component comprising the tail of the pulse. The values of positive ion drift velocity were measured from the present pulse data. At pressures in excess of about 100 Kpa the pulse shapes becam distorted such that quantitative analysis was no longer possible, and did not indicate the action of any photosecondary process at the cathode. Breakdown appers to result from the seperate development of single avalanche.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.09a
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• pp.43-46
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• 2001

The DC dielectric breakdown of epoxy composites used for transformer was experimented and then its data were simulated by Weibull distribution equation in this study. The more hardener increased the stronger breakdown strength at low temperature because of cross-linked density by the virtue of ester radical, and the breakdown strength of specimens with filler was lower than it of non-filler specimens because it was believed that the adding filler formed interface, charges were accumulated in it, the molecular mobility was raised, the electric field was concentrated, electrons were accelerated and then electron avalanche was early accomplished. From the analysis of Wei bull distribution equation, it was confirmed that as the allowed breakdown probability was· given by 0.1[%], the value of 'applied field was needed to be under 17.20[kV/mm].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05b
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• pp.159-163
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• 2003

In this study, the DC dielectric breakdown of epoxy composites used for PCB material was experimented and then its data were simulated by Weibull distribution equation. The more hardener increased the stronger breakdown strength at low temperature because of cross-linked density by the virtue of ester radical, and the breakdown strength of specimens with filler was lower than it of non-filler specimens because it is believed that the adding filler forms interface and charge is accumulated in it, therefore the molecular motility is raised, the electric field is concentrated, and the acceleration of electron and the growth of electron avalanche are early accomplished. From the analysis of Weibull distribution, it was confirmed that as the allowed breakdown probability was given by 0.1[%], the applied field value needed to be under 21.5[kV/mm].

• ETRI Journal
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• v.8 no.4
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• pp.103-109
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• 1986

LDD(Lightly Doped Drain) 방식에 의한 MOSFET의 제조 공정 및 특성에 관하여 실험 분석하였다. MOS 소자의 채널 길이가 짧아짐에 따라 드레인 가장자리에서 자체 형성되는 높은 전계로 말미암아 애벌런치 항복 전압(avalanche breakdown voltage)이 상당히 감소 한다. 이 전압을 높여 주기 위한 기술로서 LDD 방식이 적용되었으며 종래의 제조방식에 의한 MOSFET와 비교 기술되었다.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.7
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• pp.1033-1041
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• 1990

In this paper, under pinch-off conditions, the gate-drain breakdown voltage characteristics of GaAs Power MESFET's as a function of device parameters such as channel thickness, doping concentration, gate length etc. are analyzed. Using the Green's function, the gate ionic charge induced by the depleted channel ionic charge is calculated. The impact ionization integral by avalanche multiplication between gate and drain is used to investigate breakdown phenomena. Especially, the localized excess surface charge effect as well as the uniform surface charge effect on breakdown voltage is considered.

• Journal of information and communication convergence engineering
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• v.10 no.2
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• pp.200-204
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• 2012

This study has presented the analysis of breakdown voltage for a double-gate metal-oxide semiconductor field-effect transistor (MOSFET) based on the doping distribution of the Gaussian function. The double-gate MOSFET is a next generation transistor that shrinks the short channel effects of the nano-scaled CMOSFET. The degradation of breakdown voltage is a highly important short channel effect with threshold voltage roll-off and an increase in subthreshold swings. The analytical potential distribution derived from Poisson's equation and the Fulop's avalanche breakdown condition have been used to calculate the breakdown voltage of a double-gate MOSFET for the shape of the Gaussian doping distribution. This analytical potential model is in good agreement with the numerical model. Using this model, the breakdown voltage has been analyzed for channel length and doping concentration with parameters such as projected range and standard projected deviation of Gaussian function. As a result, since the breakdown voltage is greatly changed for the shape of the Gaussian function, the channel doping distribution of a double-gate MOSFET has to be carefully designed.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.5
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• pp.1-5
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• 2011

In this paper, we optimize the gate field plate structure to improve breakdown characteristics of AlGaN/GaN HEMT by two-dimensional device simulator. We have simulated using three parameters such as field-plate length, types of insulator, and insulator thickness and thereby we checked change of the electric field distribution and breakdown voltage characteristics. As optimizing field-plate structure, electric fields concentrated near the gate edge and field-plate edge are effectively dispersed. Therefore, avalanche effect is decresed, so breakdown voltage characteristic is increased. As a result breakdown characteristics of optimized gate field-plate structure are increased by about 300% compared to those of the standard structure.

• Journal of the Korean Vacuum Society
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• v.16 no.6
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• pp.414-423
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• 2007

Field Emission Display(FED) has significant advantages over existing display technologies, particularly in the area of small and high quality display. In order to test the feasibility of fabricating the System-on-Chip(SOC) with FED, we conducted the experiment to use the p-n junction as an electron beam source for the flat panel display. A novel structure was constructed to form p-n junctions by generating inversion layer with the electric field from the cantilever style gate. When we applied more than 220V at the cantilever style gate which has a height of $1{\mu}m$, avalanche breakdown onset was successfully achieved. The characteristics was compared with the electron emission from the ultra shallow junction in the avalanche region. The experiment result and the future direction were discussed.

• Electrical & Electronic Materials
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• v.9 no.8
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• pp.859-866
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• 1996

본 고에서는 절연재료에 대한 개괄적인 성질과 종류에 대해 간단히 설명하고 현재까지 개발되어 실용화 된 신 절연재료들을 소개하고자한다. 재료에 대한 연구는 절연재료 뿐만아니라 초전도재료, 극저온 재료등 특수한 성질을 갖거나 특수한 환경에서 특성을 유지할 수 있는 재료의 개발과 연구에 관심을 기울여야 할 시기라고 판단된다. 또한 기존의 재료에 대한 면밀한 재검토와 연구.고찰을 통해 보다 향상된 특성을 갖는 재료를 개발하는 것은 근본적으로 새로운 재료의 개발과 연구만큼이나 가치있는 일이라는 사실을 항상 명심해야 할 것이다.