• Journal of Magnetics
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• 제14권3호
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• pp.108-113
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• 2009

High-coercive garnet films have certain parameters suitable for creating reconfigurable magnetic atomic chips with visible geometry. However, the inner stresses and morphological properties, namely, networks of dislocations, layering and surface relief, and dependence of coercivity on thickness must be taken into account. Select features of films important for atomic trap creation have been studied experimentally and the supposed traps concept provided.

• 한국세라믹학회지
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• 제28권2호
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• pp.141-145
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• 1991

LEC법으로 성장된 GaAs의intrinsic defect에 의해서 형성된electron 및 hole trap의 농도와 성장시의 melt stoichiometry 와의 정량적 상관 관계를 DLTS법을 이용하여 분석하였다. EL2는 melt중 As의 분을 ([As]/{[As]+[Ga]})이 1.5에서 0.42까지 변하면 그 농도가 $10^{16}cm^{-3}$에서 $10^{11}cm^{-3}$정도로 감소되며, 이때 분율이 0.46 이하에서는 그 이상에서보다 As의 감소에 따라 급격히 감소하였다. 68meV 및 77/220meV의 경우는 As의 분율이 감소하면 증가하여 각각 $10^{15}cm^{-3}$ 및 $10^{14}cm^{-3}$ 정도의 농도를 가진다. 따라서 이 trap들은$GS^{AS}$와 관련된 defect들에 의해서 형성되었음을 알 수 있다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2008년도 Asian Magnetics Conference
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• pp.173.2-173.2
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• 2008

• 한국광학회:학술대회논문집
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• 한국광학회 2000년도 하계학술발표회
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• pp.64-66
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• 2000

Theoretical foundations of atom dynamics in laser fields are reviewed in relation with applications to laser spectroscopy, control of atomic motion, atom traps and frequency standards. Quasiclassical kinetic equations are applied to multilevel atomic schemes interacting with counter-propagating laser waves to describe the properties of atomic populations and coherence and the time evolution of atomic distribution function. Basic types of the dipole radiation forces on atoms are discussed for the realistic cases of multilevel dipole interaction schemes such as 3(g)＋5(e), 3(g)＋3(e), 5(g)＋3(e), 5(g)＋7(e), 3(g)＋3(e)＋5(e) and 1(g)＋3(g)＋3(e)＋5(e).

• ETRI Journal
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• 제27권1호
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• pp.118-121
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• 2005

Silicon dioxide ($SiO_2$) films prepared by plasma-enhanced atomic-layer deposition were successfully grown at temperatures of $100\;to\;250^{\circ}C$, showing self-limiting characteristics. The growth rate decreases with an increasing deposition temperature. The relative dielectric constants of $SiO_2$ films are ranged from 4.5 to 7.7 with the decrease of growth temperature. A $SiO_2$ film grown at $250^{\circ}C$ exhibits a much lower leakage current than that grown at $100^{\circ}C$ due to its high film density and the fact that it contains deeper electron traps.

• Preventive Nutrition and Food Science
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• 제3권2호
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• pp.203-209
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• 1998

The development of methods for the identification of irradiated foods helps enforce national and international regulations on labelling to ensure the consumer's free choice to buy irradiated or unirradiated foods. and the availabilityof such methods may assist the promotion of international trade in irradiated food products and help prevent abuse of the technology. A number of approaches to determine the physical , chemical, microbiological and biological changes that occur in foods treated with ionizing radiation have been studied. However no single method is universally applicable. Among physical measurements, the leading methods of indentification are electron spin resonance (ESR) spectroscopy and thermoluminescence(TL). ESR is an established non-destructive method for the analysis of free radicals from their traps and TL is the emission of light from irradiated mineral extracts by heating. Viscosity of carbohydrate polymers by causing chain breaks by irradiation, measuring the impedance of potatoes and detection of gases produced radiolytically are promising techniques for identification purposes. Irradiated water-containing foods show significant supercooling when monitored with a differential scanning calorimeter (DSC), which can be applied to identifying irradiated ones.

• 센서학회지
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• 제29권4호
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• pp.266-269
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• 2020

In this study, we investigated the effect of a sulfur passivation (S-passivation) process step on the electrical properties of surface-channel In_0.7Ga_0.3As quantum-well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) with S/D regrowth contacts. We fabricated long-channel In_0.7Ga_0.3As QW MOSFETs with and without (NH₄)₂S treatment and then deposited 1/4 nm of Al₂O₃/HfO₂ through atomic layer deposition. The devices with S-passivation exhibited lower values of subthreshold swing (74 mV/decade) and drain-induced barrier lowering (19 mV/V) than the devices without S-passivation. A conductance method was applied, and a low value of interface trap density D_it (2.83×10¹² cm^-2eV^-1) was obtained for the devices with S-passivation. Based on these results, interface traps between InGaAs and high-κ are other defect sources that need to be considered in future studies to improve III-V microsensor sensing platforms.

• Nuclear Engineering and Technology
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• 제4권1호
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• pp.3-10
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• 1972

수정의 영형광 glow curve 상,"before glow"의 생성원인중의 하나가 밀폐된 제한 공간내의 산란 감마선의 기여임을 확인하기 위하여 산란선대 일차선의 기여비(S/P)를 측정하였다. 이 S/P와 "before glow"의 유효높이 ($h_{b}$)와의 상관 관계를 고찰하였는바 상관계수+0.9라는 비교적 밀접한 일차 관계가 있음을 알았으며 이는 에너지가 감소된 산란 선에 의하여 여기되었던 전자가 본래 일차선으로 여기되었던 전자보다 얕은 trap에 걸려 있었음을 입증하는 것으로 보인다. 한편 $h_{b}$와 glow curve의 전면적 (At)의 비 및 "before glow"의 유효면적(Ab)과 At 와의 비가 S/P와 어떤 관계에 있는가도 조사하였는데 이들의 관계는 단순하지 않으며 다만 S/P 값이 0.035 보다 큰 영역에서는 간단한 대수함수로 표현되었다. 끝으로 자연수정을 TLD로 사용할 경우 그 재사용을 위한 선량한계를 살펴본 결과 그것은 $10^{5}$ R 정도임을 알아내었다.

• 한국전기전자재료학회논문지
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• 제31권4호
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• pp.198-202
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• 2018

In this work, we have investigated the effect of a 30-min thermal anneal at $550^{\circ}C$ on the electrical characteristics of neutron-irradiated 4H-SiC MOSFETs. Thermal annealing can recover the on/off characteristics of neutron-irradiated 4H-SiC MOSFETs. After thermal annealing, the interface-trap density decreased and the effective mobility increased in terms of the on-characteristics. This finding could be due to the improvement of the interfacial state from thermal annealing and the reduction in Coulomb scattering due to the reduction in interface traps. Additionally, in terms of the off-characteristics, the thermal annealing resulted in the recovery of the breakdown voltage and leakage current. After the thermal annealing, the number of positive trapped charges at the MOSFET interface was decreased.

• JSTS:Journal of Semiconductor Technology and Science
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• 제9권3호
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• pp.166-173
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• 2009

The reliability of hafnium oxide gate dielectrics incorporating lanthanum (La) is investigated. nMOSFETs with metal/La-doped high-k dielectric stack show lower $V_{th}$ and $I_{gate}$, which is attributed to the dipole formation at the high-k/$SiO_2$ interface. The reliability results well correlate with the dipole model. Due to lower trapping efficiency, the La-doping of the high-k gate stacks can provide better PBTI immunity, as well as lower charge trapping compared to the control HfSiO stacks. While the devices with La show better immunity to positive bias temperature instability (PBTI) under normal operating conditions, the threshold voltage shift (${\Delta}V_{th}$) at high field PBTI is significant. The results of a transconductance shift (${\Delta}G_m$) that traps are easily generated during high field stress because the La weakens atomic bonding in the interface layer.