• Title/Summary/Keyword: asymmetric channel

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On Design and Performance Analysis of Asymmetric 2PAM: 5G Network NOMA Perspective (비대칭 2PAM의 설계와 성능 분석: 5G 네트워크의 비직교 다중 접속 관점에서)

  • Chung, Kyuhyuk
    • Journal of Convergence for Information Technology
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    • v.10 no.10
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    • pp.24-31
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    • 2020
  • In non-orthogonal multiple access (NOMA), the degraded performance of the weaker channel gain user is a problem. In this paper, we propose the asymmetric binary pulse amplitude modulation (2PAM), to improve the bit-error rate (BER) performance of the weaker channel user in NOMA with the tolerable BER loss of the stronger channel user. First, we design the asymmetric 2PAM, calculate the total allocated power, and derive the closed-form expression for the BER of the proposed scheme. Then it is shown that the BER of the weaker channel user improves, with the small BER loss of the stronger channel user. The superiority of the proposed scheme is also validated by demonstating that the signal-to-noise ratio (SNR) gain of the weaker channel user is about 10 dB, with the SNR loss of 3 dB of the stronger channel user. In result, the asymmetric 2PAM could be considered in NOMA of 5G systems. As a direction of the future research, it would be meaningful to analyze the achievable data rate for the propsed scheme.

Analysis on Achievable Data Rate of Asymmetric 2PAM for NOMA

  • Chung, Kyuhyuk
    • International journal of advanced smart convergence
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    • v.9 no.4
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    • pp.34-41
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    • 2020
  • Nowadays, the advanced smart convergences of the artificial intelligence (AI) and the internet of things (IoT) have been more and more important, in the fifth generation (5G) and beyond 5G (B5G) mobile communication. In 5G and B5G mobile networks, non-orthogonal multiple access (NOMA) has been extensively investigated as one of the most promising multiple access (MA) technologies. In this paper, we investigate the achievable data rate for the asymmetric binary pulse amplitude modulation (2PAM), in non-orthogonal multiple access (NOMA). First, we derive the closed-form expression for the achievable data rate of the asymmetric 2PAM NOMA. Then it is shown that the achievable data rate of the asymmetric 2PAM NOMA reduces for the stronger channel user over the entire range of power allocation, whereas the achievable data rate of the asymmetric 2PAM NOMA increases for the weaker channel user improves over the power allocation range less than 50%. We also show that the sum rate of the asymmetric 2PAM NOMA is larger than that of the conventional standard 2PAM NOMA, over the power allocation range larger than 25%. In result, the asymmetric 2PAM could be a promising modulation scheme for NOMA of 5G systems, with the proper power allocation.

Bionic Study of Variable Viscosity on MHD Peristaltic Flow of Pseudoplastic Fluid in an Asymmetric Channel

  • Khan, Ambreen A.;Muhammad, Saima;Ellahi, R.;Zia, Q.M. Zaigham
    • Journal of Magnetics
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    • v.21 no.2
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    • pp.273-280
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    • 2016
  • In this paper, the peristaltic flow of Psedoplastic fluid with variable viscosity in an asymmetric channel is examined. The bionic effects by means of magnetohydrodynamics (MHD) are taken into account. The assumptions of long wave length and low Reynolds number are taken into account. The basic equations governing the flow are first reduced to a set of ordinary differential equation by using appropriate transformation for variables and then solve by using perturbation method. The effect of physical parameters on the pressure rise, velocity and pressure gradient are illustrated graphically. The trapping phenomenon is analyzed through stream lines. A suitable comparison has also been made as a limiting case of the considered problem.

Low Power Digital Logic Gate Circuits Based on N-Channel Oxide TFTs (N-Channel 산화물 TFT 기반의 저소비전력 논리 게이트 회로)

  • Ren, Tao;Park, Kee-Chan;Oh, Hwan-Sool
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.3
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    • pp.1-6
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    • 2011
  • Low-power logic gates, i.e. inverter, NAND, and NOR, are proposed employing only n-channel oxide thin film transistors (TFTs). The proposed circuits were designed to prevent the pull-up and pull-down switches from being turned on simultaneously by using asymmetric feed-through and bootstrapping, thereby exhibited same output voltage swing as the input signal and no static current. The inverter is composed of 5 TFTs and 2 capacitors. The NAND and the NOR gates consist of 10 TFTs and 4 capacitors respectively. The operations of the logic gates were confirmed successfully by SPICE simulation using oxide TFT model.

Near-BER lossless Asymmetric 2PAM non-SIC NOMA with Low-Complexity and Low-Latency under User-Fairness

  • Chung, Kyuhyuk
    • International Journal of Internet, Broadcasting and Communication
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    • v.13 no.2
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    • pp.43-51
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    • 2021
  • As the number of mobile devices has been increasing tremendously, system capacity should be enlarged in future next generation communication, such as the fifth-generation (5G) and beyond 5G (B5G) mobile networks. For such future networks, non-orthogonal multiple access (NOMA) has been considered as promising multiple access technology. In this paper, to reduce both latency and complexity in existing NOMA, we propose non-successive interference cancellation (SIC) NOMA with asymmetric binary pulse amplitude modulation (2PAM), nearly without bit-error rate (BER) loss. First, we derive the closed form of BER expressions for non-SIC NOMA with asymmetric 2PAM, especially under Rayleigh fading channels. Then, it is shown that the BER performance of the stronger channel user who is supposed to perform SIC in conventional NOMA can be nearly achieved by the proposed non-SIC NOMA with asymmetric 2PAM, especially without SIC. Furthermore, we also show that the BER performance of the weaker channel user in conventional NOMA can be more closely achieved by the proposed non-SIC NOMA with asymmetric 2PAM. These BERs are shown to be achieved over the part of the power allocation range, which is consistent with the NOMA principle of user fairness. As a result, the non-SIC NOMA scheme with asymmetric 2PAM could be considered as a promising NOMA scheme toward next generation communication.

Joint Hierarchical Modulation and Network Coding for Asymmetric Data Rate Transmission over Multiple-Access Relay Channel (다중 접속 릴레이 채널에서 비대칭 데이터 전송을 위한 계층 변조 및 네트워크 코딩 결합 기법)

  • You, Dongho;Kim, Dong Ho
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.41 no.7
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    • pp.747-749
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    • 2016
  • We consider a time-division multiple-access relay channel (MARC), in which two source nodes (SNs) transmit data with different data rate to a destination node (DN) with the help of a relay node (RN) using network coding (NC). However, due to its asymmetric data rate, the RN cannot combine the received bits by XOR NC. In this paper, we compare with the problem of asymmetric data rates by using zero padding and hierarchical 16QAM.

A design and fabrication of asymmetric Y-branch optical power splitters by $Ag^+-Na^+$ ion exchange ($Ag^+-Na^+$ 이온교환법을 이용한 비대칭형 Y-분리기의 설계 및 제작)

  • 전금수;강동성;김희주;반재경
    • Korean Journal of Optics and Photonics
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    • v.12 no.4
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    • pp.320-326
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    • 2001
  • In this paper, we have fabricated asymmetric Y-branch optical power splitters with various optical power splitting ratios by changing the width of one of the output waveguides using $Ag^+-Na^+$ ion change method in BK7 glass. The transmission characteristics of asymmetric Y-branch optical power splitters with different output waveguide width have been investigated using the finitedifference beam propagation method (FD-BPM). We have found the index of the channel waveguide formed by Ag+-Na+ ion change method in BK7 glass and have fabricated channel waveguides to examine the transmission characteristics of channel waveguide. And we have fabricated asymmetric Y-branch optical power splitters with output waveguide width from TEX>$4{\mu}m$ to $6{\mu}m$. /TEX>.

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Analysis of Subthreshold Swing for Doping Distribution Function of Asymmetric Double Gate MOSFET (도핑분포함수에 따른 비대칭 MOSFET의 문턱전압이하 스윙 분석)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.18 no.5
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    • pp.1143-1148
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    • 2014
  • This paper has analyzed the change of subthreshold swing for doping distribution function of asymmetric double gate(DG) MOSFET. The basic factors to determine the characteristics of DGMOSFET are dimensions of channel, i.e. channel length and channel thickness, and doping distribution function. The doping distributions are determined by ion implantation used for channel doping, and follow Gaussian distribution function. Gaussian function has been used as carrier distribution in solving the Poisson's equation. Since the Gaussian function is exactly not symmetric for top and bottome gates, the subthreshold swings are greatly changed for channel length and thickness, and the voltages of top and bottom gates for asymmetric double gate MOSFET. The deviation of subthreshold swings has been investigated for parameters of Gaussian distribution function such as projected range and standard projected deviation in this paper. As a result, we know the subthreshold swing is greatly changed for doping profiles and bias voltage.

Bottom Gate Voltage Dependent Threshold Voltage Roll-off of Asymmetric Double Gate MOSFET (하단게이트 전압에 따른 비대칭 이중게이트 MOSFET의 문턱전압이동 의존성)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.18 no.6
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    • pp.1422-1428
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    • 2014
  • This paper has analyzed threshold voltage roll-off for bottom gate voltages of asymmetric double gate(DG) MOSFET. Since the asymmetric DGMOSFET is four terminal device to be able to separately bias for top and bottom gates, the bottom gate voltage influences on threshold voltage. It is, therefore, investigated how the threshold voltage roll-off known as short channel effects is reduced with bottom gate voltage. In the pursuit of this purpose, off-current model is presented in the subthreshold region, and the threshold voltage roll-off is observed for channel length and thickness with a parameter of bottom gate voltage as threshold voltage is defined by top gate voltage that off-currnt is $10^{-7}A/{\mu}m$ per channel width. As a result to observe the threshold voltage roll-off for bottom gate voltage using this model, we know the bottom gate voltage greatly influences on threshold voltage roll-off voltages, especially in the region of short channel length and thickness.

Numerical Investigation of Asymmetric Flow in a Symmetric Channel with Sudden Expansion (대칭 확대 도관에서의 비대칭 흐름에 관한 연구)

  • Min Byeong Gwang;Jang Geun Sik
    • 한국전산유체공학회:학술대회논문집
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    • 1996.05a
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    • pp.68-73
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    • 1996
  • The full incompressible Navier-Stokes equations are numerically integrated to solve the unsteady channel flow using a new numerical scheme of second-order accuracy developed by the authors. It is well known that in spite of the symmetry in the boundary condition and geometry, asymmetry can develop with time-dependency in a channel with sudden expansion. The instability of the shear flow and the cross-channel pressure contribute to such asymmetric flow. In this paper, we successfully generated a channel flow in which vortex waves were propagated downstream due to the harmonically oscillating inlet flow. The structure of the eddies and wall vorticity are parametrically investigated.

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